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Journal Articles

Development of advanced photon calibrator for Kamioka gravitational wave detector (KAGRA)

Rev. Sci. Instrum. 94, 074502 (2023)

https://doi.org/10.1063/5.0147888

Published: July 2023

View article titled, Development of advanced photon calibrator for Kamioka gravitational wave detector (KAGRA)

Journal Articles

Photoconduction properties and anomalous power-dependent quantum efficiency in non-polar ZnO epitaxial films grown by chemical vapor deposition

C. H. Lin, R. S. Chen, Y. K. Lin, S. B. Wang, L. C. Chen, K. H. Chen, M. C. Wen, M. M. C. Chou, L. Chang

Appl. Phys. Lett. 110, 052101 (2017)

https://doi.org/10.1063/1.4974924

Published: January 2017

View article titled, Photoconduction properties and anomalous power-dependent quantum efficiency in non-polar ZnO epitaxial films grown by chemical vapor deposition

Journal Articles

Demonstration of large field effect in topological insulator films via a high-κ back gate

C. Y. Wang (王澄宇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), K. H. M. Chen (陳可璇), Y. H. Lin (林延勳), K. H. Chen (陳冠雄), L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), Y. T. Fanchiang (范姜宇廷), S. C. Tseng (曾紹欽), M. Hong (洪銘輝), J. Kwo (郭瑞年)

Appl. Phys. Lett. 108, 202403 (2016)

https://doi.org/10.1063/1.4950849

Published: May 2016

View article titled, Demonstration of large field effect in topological insulator films via a high-κ back gate

Journal Articles

Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition

J. Myers, S. Mou, K.-H. Chen, Y. Zhuang

Appl. Phys. Lett. 108, 053101 (2016)

https://doi.org/10.1063/1.4940991

Published: February 2016

View article titled, Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition

Journal Articles

Hypersingular meshless method using double-layer potentials for three-dimensional exterior acoustic problems

D. L. Young, K. H. Chen, T. Y. Liu, C. S. Wu

J. Acoust. Soc. Am. 139, 529–540 (2016)

https://doi.org/10.1121/1.4939895

Published: January 2016

View article titled, Hypersingular meshless method using double-layer potentials for three-dimensional exterior acoustic problems

Journal Articles

Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Sandip Dhara, C.-Y. Lu, P. Magudapathy, Y.-F. Huang, W.-S. Tu, K.-H. Chen

Appl. Phys. Lett. 106, 023101 (2015)

https://doi.org/10.1063/1.4905896

Published: January 2015

View article titled, Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Includes: Supplementary data

Journal Articles

Passivation of GaSb using molecular beam epitaxy Y₂O₃ to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

R. L. Chu (朱瑞霖), T. H. Chiang (江宗鴻), W. J. Hsueh (薛惟仁), K. H. Chen (陳冠雄), K. Y. Lin (林耕雍), G. J. Brown, J. I. Chyi (綦振瀛), J. Kwo (郭瑞年), M. Hong (洪銘輝)

Appl. Phys. Lett. 105, 182106 (2014)

https://doi.org/10.1063/1.4901100

Published: November 2014

View article titled, Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Journal Articles

Size-tunable strain engineering in Ge nanocrystals embedded within SiO₂ and Si₃N₄

P. H. Liao, T. C. Hsu, K. H. Chen, T. H. Cheng, T. M. Hsu, C. C. Wang, T. George, P. W. Li

Appl. Phys. Lett. 105, 172106 (2014)

https://doi.org/10.1063/1.4900942

Published: October 2014

View article titled, Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4

Journal Articles

The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots

K. H. Chen, C. C. Wang, T. George, P. W. Li

Appl. Phys. Lett. 105, 122102 (2014)

https://doi.org/10.1063/1.4896504

Published: September 2014

View article titled, The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots

Journal Articles

Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

R. S. Chen, W. C. Wang, C. H. Chan, M. L. Lu, Y. F. Chen, H. C. Lin, K. H. Chen, L. C. Chen

Appl. Phys. Lett. 103, 223107 (2013)

https://doi.org/10.1063/1.4833538

Published: November 2013

View article titled, Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

Includes: Supplementary data

Journal Articles

Resistance memory device of La_0.7Sr_0.3MnO₃ on Si nanotips template

C. W. Chong, M. J. Huang, H. C. Han, Y. K. Lin, J. M. Chiu, Y. F. Huang, H. J. Lin, T. W. Pi, J. G. Lin, L. C. Chen, K. H. Chen, Y. F. Chen

Appl. Phys. Lett. 103, 211606 (2013)

https://doi.org/10.1063/1.4833515

Published: November 2013

View article titled, Resistance memory device of La0.7Sr0.3MnO3 on Si nanotips template

Includes: Supplementary data

Journal Articles

Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

R. S. Chen, H. Y. Tsai, Y. S. Huang, Y. T. Chen, L. C. Chen, K. H. Chen

Appl. Phys. Lett. 101, 113109 (2012)

https://doi.org/10.1063/1.4752230

Published: September 2012

View article titled, Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

Journal Articles

Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot

S. Amloy, E. S. Moskalenko, M. Eriksson, K. F. Karlsson, Y. T. Chen, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, P. O. Holtz

Appl. Phys. Lett. 101, 061910 (2012)

https://doi.org/10.1063/1.4742343

Published: August 2012

View article titled, Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot

Journal Articles

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

K. Aravind, Y. W. Su, D. S. Chung, Watson Kuo, C. S. Wu, K. S. Chang-Liao, K. H. Chen, L. C. Chen, C. D. Chen

AIP Advances 2, 012155 (2012)

https://doi.org/10.1063/1.3691830

Published: February 2012

View article titled, Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Journal Articles

Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al₂O₃ (0001) by high power impulse magnetron sputtering

M. Junaid, D. Lundin, J. Palisaitis, C.-L. Hsiao, V. Darakchieva, J. Jensen, P. O. Å. Persson, P. Sandström, W.-J. Lai, L.-C. Chen, K.-H. Chen, U. Helmersson, L. Hultman, J. Birch

J. Appl. Phys. 110, 123519 (2011)

https://doi.org/10.1063/1.3671560

Published: December 2011

View article titled, Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

Journal Articles

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das, S. Dhara, Yeau-Ren Jeng, Ping-Chi Tsai, H. C. Hsu, Baldev Raj, A. K. Bhaduri, S. K. Albert, A. K. Tyagi, L. C. Chen, K. H. Chen

Appl. Phys. Lett. 96, 253113 (2010)

https://doi.org/10.1063/1.3456380

Published: June 2010

View article titled, Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

Journal Articles

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

K. H. Chen, C. Y. Chang, L. C. Leu, C. F. Lo, B. H. Chu, S. J. Pearton, F. Ren

J. Vac. Sci. Technol. B 28, 365–370 (2010)

https://doi.org/10.1116/1.3359603

Published: March 2010

View article titled, Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Journal Articles

Photoconductivity in single AlN nanowires by subband gap excitation

H. M. Huang, R. S. Chen, H. Y. Chen, T. W. Liu, C. C. Kuo, C. P. Chen, H. C. Hsu, L. C. Chen, K. H. Chen, Y. J. Yang

Appl. Phys. Lett. 96, 062104 (2010)

https://doi.org/10.1063/1.3292211

Published: February 2010

View article titled, Photoconductivity in single AlN nanowires by subband gap excitation

Journal Articles

Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires

R. S. Chen, C. Y. Lu, K. H. Chen, L. C. Chen

Appl. Phys. Lett. 95, 233119 (2009)

https://doi.org/10.1063/1.3264954

Published: December 2009

View article titled, Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires

Journal Articles

190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole

K. H. Chen, Wenhsing Wu, Byung Hwan Chu, C. F. Lo, Jenshan Lin, Y. L. Wang, C. Y. Chang, S. J. Pearton, F. Ren

J. Vac. Sci. Technol. B 27, L42–L46 (2009)

https://doi.org/10.1116/1.3253389

Published: November 2009

View article titled, 190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole

NARROW

Topics

Development of advanced photon calibrator for Kamioka gravitational wave detector (KAGRA)

Photoconduction properties and anomalous power-dependent quantum efficiency in non-polar ZnO epitaxial films grown by chemical vapor deposition

Demonstration of large field effect in topological insulator films via a high-κ back gate

Scanning microwave microscope imaging of micro-patterned monolayer graphene grown by chemical vapor deposition

Hypersingular meshless method using double-layer potentials for three-dimensional exterior acoustic problems

Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Passivation of GaSb using molecular beam epitaxy Y₂O₃ to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Size-tunable strain engineering in Ge nanocrystals embedded within SiO₂ and Si₃N₄

The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots

Photoconduction efficiencies of metal oxide semiconductor nanowires: The material's inherent properties

Resistance memory device of La_0.7Sr_0.3MnO₃ on Si nanotips template

Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot

Magnetic-field and temperature dependence of the energy gap in InN nanobelt

Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al₂O₃ (0001) by high power impulse magnetron sputtering

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Photoconductivity in single AlN nanowires by subband gap excitation

Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires

190 nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole

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