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1-15 of 15
K. H. Bachem
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Journal Articles
Direct growth of CdTe thick films on the Medipix2 pixel detector chip
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 108, 094504 (2010)
Published: November 2010
Journal Articles
Light-emitting diodes and laser diodes based on a Ga 1−x In x As/GaAs 1−y Sb y type II superlattice on InP substrate
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 74, 1951–1953 (1999)
Published: April 1999
Journal Articles
Band gaps and band offsets in strained GaAs 1−y Sb y on InP grown by metalorganic chemical vapor deposition
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 74, 410–412 (1999)
Published: January 1999
Journal Articles
Spectroscopic ellipsometry characterization of (InGa)N on GaN
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 73, 1715–1717 (1998)
Published: September 1998
Journal Articles
Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 73, 241–243 (1998)
Published: July 1998
Journal Articles
Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in In 0.53 Ga 0.47 As
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 83, 4299–4302 (1998)
Published: April 1998
Journal Articles
Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 70, 363–365 (1997)
Published: January 1997
Journal Articles
Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 67, 2639–2641 (1995)
Published: October 1995
Journal Articles
Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 73, 2739–2742 (1993)
Published: March 1993
Journal Articles
Raman spectroscopic assessment of carbon‐hydrogen pairs in carbon‐doped GaAs layers
Available to PurchaseJ. Wagner, M. Maier, Th. Lauterbach, K. H. Bachem, M. Ashwin, R. C. Newman, K. Woodhouse, R. Nicklin, R. R. Bradley
Journal:
Applied Physics Letters
Appl. Phys. Lett. 60, 2546–2548 (1992)
Published: May 1992
Journal Articles
Photoluminescence topography of shallow impurities in GaAs epilayers grown by metalorganic vapor phase epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 60, 1609–1611 (1992)
Published: March 1992
Journal Articles
77 K cw operation of distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe diode lasers
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 48, 1178–1180 (1986)
Published: May 1986
Journal Articles
Summary Abstract: Fabrication and properties of PbSe/Pb1−xSnx Se DH‐laser structures
Available to Purchase
J. Vac. Sci. Technol. B 3, 782–783 (1985)
Published: March 1985
Journal Articles
Investigation of diffusion length and lifetime in lead chalcogenides by electron‐beam‐induced‐current measurements at low temperatures
Available to PurchaseA. Eisenbeiss, H. Heinrich, A. Jakubowicz, W. Maurer, L. Palmetshofer, H. M. Preier, K. H. Bachem, H. Böttner
Journal:
Journal of Applied Physics
J. Appl. Phys. 56, 362–367 (1984)
Published: July 1984
Proceedings Papers