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Journal Articles

Nano-indentation used to study pyramidal slip in GaN single crystals

E. Krimsky, K. A. Jones, R. P. Tompkins, P. Rotella, J. Ligda, B. E. Schuster
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 065701 (2018)
https://doi.org/10.1063/1.5011322
Published: February 2018
View article titled, Nano-indentation used to study pyramidal slip in GaN single crystals
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Journal Articles

The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or ( 11 2 ¯ 2 ) GaN or AlN substrates

K. A. Jones, I. G. Batyrev
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 113507 (2012)
https://doi.org/10.1063/1.4767683
Published: December 2012
View article titled, The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or ( 11 2 ¯ 2 ) GaN or AlN substrates
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Journal Articles

Schottky metal-GaN interface KOH pretreatment for improved device performance

P. B. Shah, I. Batyrev, M. A. Derenge, U. Lee, C. Nyguen, K. A. Jones
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 28, 684–688 (2010)
https://doi.org/10.1116/1.3299253
Published: June 2010
View article titled, Schottky metal-GaN interface KOH pretreatment for improved device performance
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Journal Articles

Variations in μ τ measurements in cadmium zinc telluride

K. A. Jones, A. Datta, K. G. Lynn, L. A. Franks
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 123714 (2010)
https://doi.org/10.1063/1.3428475
Published: June 2010
View article titled, Variations in μ τ measurements in cadmium zinc telluride
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Journal Articles

Activation of ion implanted Si in GaN using a dual AlN annealing cap

C. E. Hager, IV, K. A. Jones, M. A. Derenge, T. S. Zheleva
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 033713 (2009)
https://doi.org/10.1063/1.3068317
Published: February 2009
View article titled, Activation of ion implanted Si in GaN using a dual AlN annealing cap
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Journal Articles

Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

D. J. Ewing, M. A. Derenge, P. B. Shah, U. Lee, T. S. Zheleva, K. A. Jones
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1368–1372 (2008)
https://doi.org/10.1116/1.2953724
Published: August 2008
View article titled, Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density
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Journal Articles

Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices

R. D. Vispute, S. Hullavarad, A. Luykx, D. Young, S. Dhar, T. Venkatesan, K. A. Jones, T. S. Zheleva, M. Ervin, M. Derenge
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 241917 (2007)
https://doi.org/10.1063/1.2748858
Published: June 2007
View article titled, Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices
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Journal Articles

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

K. A. Jones, P. B. Shah, T. S. Zheleva, M. H. Ervin, M. A. Derenge, J. A. Freitas, S. Harmon, J. McGee, R. D. Vispute
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 5613–5618 (2004)
https://doi.org/10.1063/1.1798404
Published: November 2004
View article titled, Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si
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Journal Articles

Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching

P. B. Shah, B. M. Nichols, M. D. Derenge, K. A. Jones
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 22, 1847–1851 (2004)
https://doi.org/10.1116/1.1690256
Published: July 2004
View article titled, Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching
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Journal Articles

Deep-level transient spectroscopy study on double implanted n + –p and p + –n 4H-SiC diodes

Souvick Mitra, Mulpuri V. Rao, N. Papanicolaou, K. A. Jones, M. Derenge, O. W. Holland, R. D. Vispute, S. R. Wilson
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 69–75 (2004)
https://doi.org/10.1063/1.1623631
Published: January 2004
View article titled, Deep-level transient spectroscopy study on double implanted n + –p and p + –n 4H-SiC diodes
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Journal Articles

Electrical Activation Processes in Ion Implanted SiC Device Structures

K. A. Jones, M. H. Ervin, P. B. Shah, M. A. Derenge, R. D. Vispute, T. Venkatesan, J. A. Freitas
Journal: AIP Conference Proceedings
AIP Conf. Proc. 680, 694–696 (2003)
https://doi.org/10.1063/1.1619809
Published: August 2003
View article titled, Electrical Activation Processes in Ion Implanted SiC Device Structures
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Journal Articles

Variable-dose (10 17 –10 20   cm −3 ) phosphorus ion implantation into 4H–SiC

Evan M. Handy, Mulpuri V. Rao, O. W. Holland, K. A. Jones, M. A. Derenge, N. Papanicolaou
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 5630–5634 (2000)
https://doi.org/10.1063/1.1319161
Published: November 2000
View article titled, Variable-dose (10 17 –10 20   cm −3 ) phosphorus ion implantation into 4H–SiC
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Journal Articles

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Evan M. Handy, Mulpuri V. Rao, K. A. Jones, M. A. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou, J. Mittereder
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 746–751 (1999)
https://doi.org/10.1063/1.370798
Published: July 1999
View article titled, Effectiveness of AlN encapsulant in annealing ion-implanted SiC
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Journal Articles

Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition

A. A. Iliadis, S. N. Andronescu, K. Edinger, J. H. Orloff, R. D. Vispute, V. Talyansky, R. P. Sharma, T. Venkatesan, M. C. Wood, K. A. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 3545–3547 (1998)
https://doi.org/10.1063/1.122802
Published: December 1998
View article titled, Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition
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Journal Articles

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, K. A. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 348–350 (1998)
https://doi.org/10.1063/1.121830
Published: July 1998
View article titled, Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
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Journal Articles

AlN as an encapsulate for annealing SiC

K. A. Jones, K. Xie, D. W. Eckart, M. C. Wood, V. Talyansky, R. D. Vispute, T. Venkatesan, K. Wongchotigul, M. Spencer
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 8010–8015 (1998)
https://doi.org/10.1063/1.367893
Published: June 1998
View article titled, AlN as an encapsulate for annealing SiC
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Journal Articles

Comparison of PdGeTiPt and NiGeAu ohmic contacts to n -GaAs and PdGeTiPt and TiPd contacts to p + -GaAs

K. A. Jones, M. W. Cole, W. Y. Han, D. W. Eckart, K. P. Hilton, M. A. Crouch, B. H. Hughes
Journal: Journal of Applied Physics
J. Appl. Phys. 82, 1723–1729 (1997)
https://doi.org/10.1063/1.365973
Published: August 1997
View article titled, Comparison of PdGeTiPt and NiGeAu ohmic contacts to n -GaAs and PdGeTiPt and TiPd contacts to p + -GaAs
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Journal Articles

Growth of epitaxial GaN films by pulsed laser deposition

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, J. W. Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 102–104 (1997)
https://doi.org/10.1063/1.119441
Published: July 1997
View article titled, Growth of epitaxial GaN films by pulsed laser deposition
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Journal Articles

High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides

R. D. Vispute, V. Talyansky, Z. Trajanovic, S. Choopun, M. Downes, R. P. Sharma, T. Venkatesan, M. C. Woods, R. T. Lareau, K. A. Jones, A. A. Iliadis
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 2735–2737 (1997)
https://doi.org/10.1063/1.119006
Published: May 1997
View article titled, High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides
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Journal Articles

Comparison of ohmic metallization schemes for InGaAlN

F. Ren, C. B. Vartuli, S. J. Pearton, C. R. Abernathy, S. M. Donovan, J. D. MacKenzie, R. J. Shul, J. C. Zolper, M. L. Lovejoy, A. G. Baca, M. Hagerott-Crawford, K. A. Jones
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 15, 802–806 (1997)
https://doi.org/10.1116/1.580711
Published: May 1997
View article titled, Comparison of ohmic metallization schemes for InGaAlN
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