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Jong Ho Lee
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Journal Articles

Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory

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Yongjin Park, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 160, 074704 (2024)
https://doi.org/10.1063/5.0190195
Published: February 2024
View article titled, Multifunctional HfAlO thin film: Ferroelectric tunnel junction and resistive random access memory
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Includes: Supplementary data
Journal Articles

Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems

Open Access
Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim
Journal: APL Materials
APL Mater. 11, 111103 (2023)
https://doi.org/10.1063/5.0175587
Published: November 2023
View article titled, Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems
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Includes: Supplementary data
Journal Articles

Voltage scheme for string-select transistors to improve inhibition characteristics during 1-bit erase in vertical NAND flash

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Sung-Ho Park, Ho-Nam Yoo, Yeongheon Yang, Jong-Won Back, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 142101 (2023)
https://doi.org/10.1063/5.0161000
Published: October 2023
View article titled, Voltage scheme for string-select transistors to improve inhibition characteristics during 1-bit erase in vertical NAND flash
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Journal Articles

Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

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Wonjun Shin, Jihyun Shin, Jong-Ho Lee, Hocheon Yoo, Sung-Tae Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 263506 (2023)
https://doi.org/10.1063/5.0146275
Published: June 2023
View article titled, Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy
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Journal Articles

Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure

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Wonjun Shin, Eun Chan Park, Ryun-Han Koo, Dongseok Kwon, Daewoong Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152905 (2023)
https://doi.org/10.1063/5.0140953
Published: April 2023
View article titled, Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure
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Journal Articles

Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction

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Wonjun Shin, Ryun-Han Koo, Kyung Kyu Min, Been Kwak, Dongseok Kwon, Daewoong Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152901 (2023)
https://doi.org/10.1063/5.0140954
Published: April 2023
View article titled, Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction
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Journal Articles

Super-steep synapses based on positive feedback devices for reliable binary neural networks

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Dongseok Kwon, Hyeongsu Kim, Kyu-Ho Lee, Joon Hwang, Wonjun Shin, Jong-Ho Bae, Sung Yun Woo, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 102101 (2023)
https://doi.org/10.1063/5.0131235
Published: March 2023
View article titled, Super-steep synapses based on positive feedback devices for reliable binary neural networks
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Journal Articles

Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

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Wonjun Shin, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 163501 (2022)
https://doi.org/10.1063/5.0111309
Published: October 2022
View article titled, Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy
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Journal Articles

Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack

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Kyung Kyu Min, Seok Jin Kwon, Yeonwoo Kim, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 012901 (2022)
https://doi.org/10.1063/5.0077840
Published: January 2022
View article titled, Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack
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Journal Articles

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

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Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Jong-Ho Lee, In Man Kang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 183503 (2019)
https://doi.org/10.1063/1.5090934
Published: May 2019
View article titled, A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance
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Journal Articles

A source drain symmetric and interchangeable bidirectional tunneling field effect transistor

Open Access
Xiaoshi Jin, Yunxiang Gao, Xi Liu, Jong-Ho Lee
Journal: AIP Advances
AIP Advances 8, 085318 (2018)
https://doi.org/10.1063/1.5040536
Published: August 2018
View article titled, A source drain symmetric and interchangeable bidirectional tunneling field effect transistor
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Journal Articles

Configuring PSx tetrahedral clusters in Li-excess Li7P3S11 solid electrolyte

Open Access
Wo Dum Jung, Bin-Na Yun, Hun-Gi Jung, Sungjun Choi, Ji-Won Son, Jong-Ho Lee, Jong-Heun Lee, Hyoungchul Kim
Journal: APL Materials
APL Mater. 6, 047902 (2018)
https://doi.org/10.1063/1.5011105
Published: January 2018
View article titled, Configuring PSx tetrahedral clusters in Li-excess Li7P3S11 solid electrolyte
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Journal Articles

Analysis of the threshold switching mechanism of a Te–SbO selector device for crosspoint nonvolatile memory applications

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Young Seok Kim, Ji Woon Park, Jong Ho Lee, In Ah Choi, Jaeyeong Heo, Hyeong Joon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 183501 (2017)
https://doi.org/10.1063/1.4998493
Published: October 2017
View article titled, Analysis of the threshold switching mechanism of a Te–SbO selector device for crosspoint nonvolatile memory applications
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Journal Articles

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

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Chan-Yong Jeong, Hee-Joong Kim, Jong In Kim, Jong-Ho Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 060601 (2016)
https://doi.org/10.1116/1.4964608
Published: October 2016
View article titled, Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors
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Journal Articles

Elimination of the gate and drain bias stresses in I–V characteristics of WSe2 FETs by using dual channel pulse measurement

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Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 053503 (2016)
https://doi.org/10.1063/1.4960459
Published: August 2016
View article titled, Elimination of the gate and drain bias stresses in I–V characteristics of WSe2 FETs by using dual channel pulse measurement
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Journal Articles

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

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Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, Jong In Kim, Jong-Ho Lee, Jae-Gwang Um, Jin Jang, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 030603 (2015)
https://doi.org/10.1116/1.4919234
Published: April 2015
View article titled, Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors
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Journal Articles

Low frequency noise characteristics in multilayer WSe2 field effect transistor

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In-Tak Cho, Jong In Kim, Yoonki Hong, Jeongkyun Roh, Hyeonwoo Shin, Geun Woo Baek, Changhee Lee, Byung Hee Hong, Sung Hun Jin, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 023504 (2015)
https://doi.org/10.1063/1.4906141
Published: January 2015
View article titled, Low frequency noise characteristics in multilayer WSe2 field effect transistor
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Journal Articles

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

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Daeun Lee, Chan-Yong Jeong, Sang-Hun Song, Jin Xiao-Shi, Jong In Kim, Jong-Ho Lee, Hyuck-In Kwon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 011202 (2015)
https://doi.org/10.1116/1.4903527
Published: December 2014
View article titled, Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses
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Journal Articles

Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

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Bum Ho Choi, Jong Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 053302 (2014)
https://doi.org/10.1063/1.4892354
Published: August 2014
View article titled, Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures
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Journal Articles

Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors

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Jong In Kim, Ki Soo Chang, Dong Uk Kim, In-Tak Cho, Chan-Yong Jeong, Daeun Lee, Hyuck-In Kwon, Sung Hun Jin, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 043501 (2014)
https://doi.org/10.1063/1.4891644
Published: July 2014
View article titled, Thermoreflectance microscopy analysis on self-heating effect of short-channel amorphous In-Ga-Zn-O thin film transistors
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