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Jonas Lähnemann
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Journal Articles

Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Frank Peiris, Jonas Lähnemann, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112102 (2023)
https://doi.org/10.1063/5.0164058
Published: September 2023
View article titled, Optical properties of ScN layers grown on Al<sub>2</sub>O<sub>3</sub>(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152103 (2023)
https://doi.org/10.1063/5.0137873
Published: April 2023
View article titled, Lattice parameters of Sc<sub><em>x</em></sub>Al<sub>1−<em>x</em></sub>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Open the PDF for Lattice parameters of Sc<sub><em>x</em></sub>Al<sub>1−<em>x</em></sub>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy in another window
Includes: Supplementary data
Journal Articles

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

Kingsley Egbo, Jonas Lähnemann, Andreas Falkenstein, Joel Varley, Oliver Bierwagen
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 122101 (2023)
https://doi.org/10.1063/5.0130935
Published: March 2023
View article titled, Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Open the PDF for Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing in another window
Includes: Supplementary data
Journal Articles

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Kingsley Egbo, Esperanza Luna, Jonas Lähnemann, Georg Hoffmann, Achim Trampert, Jona Grümbel, Elias Kluth, Martin Feneberg, Rüdiger Goldhahn, Oliver Bierwagen
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 045701 (2023)
https://doi.org/10.1063/5.0131138
Published: January 2023
View article titled, Epitaxial synthesis of unintentionally doped <em>p</em>-type SnO (001) via <em>suboxide</em> molecular beam epitaxy
Open the PDF for Epitaxial synthesis of unintentionally doped <em>p</em>-type SnO (001) via <em>suboxide</em> molecular beam epitaxy in another window
Includes: Supplementary data
Journal Articles

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films

Johannes Feldl, Martin Feneberg, Alexandra Papadogianni, Jonas Lähnemann, Takahiro Nagata, Oliver Bierwagen, Rüdiger Goldhahn, Manfred Ramsteiner
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 042101 (2021)
https://doi.org/10.1063/5.0056532
Published: July 2021
View article titled, Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<sub>2</sub>O<sub>3</sub> alloy films
Open the PDF for Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<sub>2</sub>O<sub>3</sub> alloy films in another window
Includes: Supplementary data
Journal Articles

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

Melanie Budde, Thilo Remmele, Carsten Tschammer, Johannes Feldl, Philipp Franz, Jonas Lähnemann, Zongzhe Cheng, Michael Hanke, Manfred Ramsteiner, Martin Albrecht, Oliver Bierwagen
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 015306 (2020)
https://doi.org/10.1063/1.5129881
Published: January 2020
View article titled, Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
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Includes: Supplementary data
Journal Articles

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Caroline Chèze, Marcin Siekacz, Grzegorz Muzioł, Henryk Turski, Szymon Grzanka, Marcin Kryśko, Jan L. Weyher, Michał Boćkowski, Christian Hauswald, Jonas Lähnemann, Oliver Brandt, Martin Albrecht, Czesław Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C130 (2013)
https://doi.org/10.1116/1.4802964
Published: April 2013
View article titled, Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
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Journal Articles

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Benjamin Wilsch, Uwe Jahn, Bernd Jenichen, Jonas Lähnemann, Holger T. Grahn, Hui Wang, Hui Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 052109 (2013)
https://doi.org/10.1063/1.4790591
Published: February 2013
View article titled, Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
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