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Jon F. Ihlefeld
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Journal Articles

Multistate resistance in TaN/(Hf,Zr)O2/Ta ferroelectric tunnel junctions

Open Access
M. David Henry, David Stoltzfus, Megan K. Lenox, Samantha T. Jaszewski, Travis Young, Jon F. Ihlefeld
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 144104 (2025)
https://doi.org/10.1063/5.0256686
Published: April 2025
View articletitled, Multistate resistance in TaN/(Hf,Zr)O2/Ta ferroelectric tunnel junctions
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Journal Articles

Erratum: “Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films” [Appl. Phys. Lett. 124 , 252905 (2024)]

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Liron Shvilberg, Chuanzhen Zhou, Megan K. Lenox, Benjamin L. Aronson, Nicolas K. Lam, Samantha T. Jaszewski, Elizabeth J. Opila, Jon F. Ihlefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 039901 (2025)
https://doi.org/10.1063/5.0251555
Published: January 2025
View articletitled, Erratum: “Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films” [Appl. Phys. Lett. 124 , 252905 (2024)]
Open the PDF for Erratum: “Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films” [Appl. Phys. Lett. 124 , 252905 (2024)] in another window
Journal Articles

Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale

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Tony Chiang, Megan K. Lenox, Tao Ma, Jon F. Ihlefeld, John T. Heron
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 022904 (2025)
https://doi.org/10.1063/5.0246657
Published: January 2025
View articletitled, Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale
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Journal Articles

Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors

Open Access
Matthew Webb, Tony Chiang, Megan K. Lenox, Jordan Gray, Tao Ma, Jon F. Ihlefeld, John T. Heron
Journal: APL Materials
APL Mater. 13, 011114 (2025)
https://doi.org/10.1063/5.0248765
Published: January 2025
View articletitled, Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors
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Journal Articles

Erratum: “Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2” [Appl. Phys. Lett. 124 , 062902 (2024)]

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Thomas E. Beechem, Fernando Vega, Samantha T. Jaszewski, Benjamin L. Aronson, Kyle P. Kelley, Jon. F. Ihlefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 269901 (2024)
https://doi.org/10.1063/5.0223769
Published: June 2024
View articletitled, Erratum: “Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2” [Appl. Phys. Lett. 124 , 062902 (2024)]
Open the PDF for Erratum: “Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2” [Appl. Phys. Lett. 124 , 062902 (2024)] in another window
Journal Articles

Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films

Available to Purchase
Liron Shvilberg, Chuanzhen Zhou, Megan K. Lenox, Benjamin L. Aronson, Nicolas K. Lam, Samantha T. Jaszewski, Elizabeth J. Opila, Jon F. Ihlefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 252905 (2024)
https://doi.org/10.1063/5.0209502
Published: June 2024
View articletitled, Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films
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Journal Articles

Increased thermal conductivity and decreased electron–phonon coupling factor of the aluminum scandium intermetallic phase (Al3Sc) compared to solid solutions

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Daniel Hirt, Md. Rafiqul Islam, Md. Shafkat Bin Hoque, William Hutchins, Sara Makarem, Megan K. Lenox, William T. Riffe, Jon F. Ihlefeld, Ethan A. Scott, Giovanni Esteves, Patrick E. Hopkins
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 202202 (2024)
https://doi.org/10.1063/5.0201763
Published: May 2024
View articletitled, Increased thermal conductivity and decreased electron–phonon coupling factor of the aluminum scandium intermetallic phase (Al3Sc) compared to solid solutions
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Includes: Supplementary data
Journal Articles

Effect of background gas composition on the stoichiometry and lithium ion conductivity of pulse laser deposited epitaxial lithium lanthanum tantalate (Li3xLa1/3−xTaO3)

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Ian A. Brummel, Chuanzhen Zhou, Jon F. Ihlefeld
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 032705 (2024)
https://doi.org/10.1116/6.0003457
Published: April 2024
View articletitled, Effect of background gas composition on the stoichiometry and lithium ion conductivity of pulse laser deposited epitaxial lithium lanthanum tantalate (Li3xLa1/3−xTaO3)
Open the PDF for Effect of background gas composition on the stoichiometry and lithium ion conductivity of pulse laser deposited epitaxial lithium lanthanum tantalate (Li3xLa1/3−xTaO3) in another window
Includes: Supplementary data
Journal Articles

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Open Access
Jessica Haglund-Peterson, Benjamin L. Aronson, Samantha T. Jaszewski, Scott Habermehl, Giovanni Esteves, John F. Conley, Jr., Jon F. Ihlefeld, M. David Henry
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 094104 (2024)
https://doi.org/10.1063/5.0191757
Published: March 2024
View articletitled, Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes
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Journal Articles

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

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Joseph Casamento, Steven M. Baksa, Drew Behrendt, Sebastian Calderon, Devin Goodling, John Hayden, Fan He, Leonard Jacques, Seung Hoon Lee, Walter Smith, Albert Suceava, Quyen Tran, Xiaojun Zheng, Rui Zu, Thomas Beechem, Ismaila Dabo, Elizabeth C. Dickey, Giovanni Esteves, Venkatraman Gopalan, Michael David Henry, Jon F. Ihlefeld, Thomas N. Jackson, Sergei V. Kalinin, Kyle P. Kelley, Yongtao Liu, Andrew M. Rappe, Joan Redwing, Susan Trolier-McKinstry, Jon-Paul Maria
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 080501 (2024)
https://doi.org/10.1063/5.0185066
Published: February 2024
View articletitled, Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications
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Journal Articles

Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2

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Thomas E. Beechem, Fernando Vega, Samantha T. Jaszewski, Benjamin L. Aronson, Kyle P. Kelley, Jon. F. Ihlefeld
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 062902 (2024)
https://doi.org/10.1063/5.0186481
Published: February 2024
View articletitled, Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2
Open the PDF for Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2 in another window
Journal Articles

Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films

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Samantha T. Jaszewski, Shelby S. Fields, Ching-Chang Chung, Jacob L. Jones, Keithen G. Orson, Petra Reinke, Jon F. Ihlefeld
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 023414 (2024)
https://doi.org/10.1116/6.0003307
Published: February 2024
View articletitled, Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films
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Includes: Supplementary data
Journal Articles

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

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Jon F. Ihlefeld, Travis Peters, Samantha T. Jaszewski, Takanori Mimura, Benjamin L. Aronson, Susan Trolier-McKinstry
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 082901 (2023)
https://doi.org/10.1063/5.0165072
Published: August 2023
View articletitled, Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films
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Includes: Supplementary data
Journal Articles

The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

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Peter M. Litwin, Samantha T. Jaszewski, Wendy L. Sarney, Asher C. Leff, Sergiy Krylyuk, Albert V. Davydov, Jon F. Ihlefeld, Stephen J. McDonnell
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042707 (2023)
https://doi.org/10.1116/6.0002593
Published: June 2023
View articletitled, The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity
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Includes: Supplementary data
Journal Articles

Optical properties of pulsed dc magnetron sputtered thin film tantalum nitride by spectroscopic ellipsometry

Editor’s PickFree
Bishal Shrestha, Samantha T. Jaszewski, Jon F. Ihlefeld, Steve L. Wolfley, M. David Henry, Nikolas J. Podraza
Journal: Surface Science Spectra
Surf. Sci. Spectra 30, 016001 (2023)
https://doi.org/10.1116/6.0002441
Published: June 2023
View articletitled, Optical properties of pulsed dc magnetron sputtered thin film tantalum nitride by spectroscopic ellipsometry
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Includes: Supplementary data
Journal Articles

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

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Antik Mallick, Megan K. Lenox, Thomas E. Beechem, Jon F. Ihlefeld, Nikhil Shukla
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 132902 (2023)
https://doi.org/10.1063/5.0142789
Published: March 2023
View articletitled, Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films
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Journal Articles

Publisher's Note: “A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance” [Appl. Phys. Lett. 121 , 240502 (2022)]

Free
Jon F. Ihlefeld, Samantha T. Jaszewski, Shelby S. Fields
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 019901 (2023)
https://doi.org/10.1063/5.0139749
Published: January 2023
View articletitled, Publisher's Note: “A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance” [Appl. Phys. Lett. 121 , 240502 (2022)]
Open the PDF for Publisher's Note: “A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance” [Appl. Phys. Lett. 121 , 240502 (2022)] in another window
Journal Articles

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Available to Purchase
Jon F. Ihlefeld, Samantha T. Jaszewski, Shelby S. Fields
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 240502 (2022)
https://doi.org/10.1063/5.0129546
Published: December 2022
View articletitled, A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
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Journal Articles

Exploring leakage in dielectric films via automated experiments in scanning probe microscopy

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Yongtao Liu, Shelby S. Fields, Takanori Mimura, Kyle P. Kelley, Susan Trolier-McKinstry, Jon F. Ihlefeld, Sergei V. Kalinin
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 182903 (2022)
https://doi.org/10.1063/5.0079217
Published: May 2022
View articletitled, Exploring leakage in dielectric films via automated experiments in scanning probe microscopy
Open the PDF for Exploring leakage in dielectric films via automated experiments in scanning probe microscopy in another window
Includes: Supplementary data
Journal Articles

Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

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Shelby S. Fields, Sean W. Smith, Samantha T. Jaszewski, Takanori Mimura, Diane A. Dickie, Giovanni Esteves, M. David Henry, Steve L. Wolfley, Paul S. Davids, Jon F. Ihlefeld
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 134101 (2021)
https://doi.org/10.1063/5.0064145
Published: October 2021
View articletitled, Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes
Open the PDF for Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes in another window
Includes: Supplementary data