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Journal Articles

Metal contacts and Schottky barriers at β-Ga₂O₃ interfaces: High-throughput-assisted first-principles calculations

Wei Yu, Jiaren Feng, Qingzhong Gui, Xuhao Wan, Junjie Shi, John Robertson, Zhaofu Zhang, Sheng Liu, Yuzheng Guo

J. Appl. Phys. 137, 115701 (2025)

https://doi.org/10.1063/5.0256577

Published: March 2025

View article titled, Metal contacts and Schottky barriers at β-Ga2O3 interfaces: High-throughput-assisted first-principles calculations

Journal Articles

Amorphous TeO₂ as p-type oxide semiconductor for device applications

John Robertson, Xuewei Zhang, Qingzhong Gui, Yuzheng Guo

Appl. Phys. Lett. 124, 212101 (2024)

https://doi.org/10.1063/5.0206621

Published: May 2024

View article titled, Amorphous TeO2 as p-type oxide semiconductor for device applications

Journal Articles

High-throughput interface prediction and generation scheme: The case of β -Ga₂O₃/AlN interfaces

Wei Yu, Qingzhong Gui, Xuhao Wan, John Robertson, Zhaofu Zhang, Yuzheng Guo

Appl. Phys. Lett. 123, 161601 (2023)

https://doi.org/10.1063/5.0162824

Published: October 2023

View article titled, High-throughput interface prediction and generation scheme: The case of β -Ga2O3/AlN interfaces

Includes: Supplementary data

Journal Articles

Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study

Zhiyong Fu, Hailing Guo, Xiting Wang, Ruyue Cao, Hongxia Zhong, Sheng Liu, John Robertson, Yuzheng Guo, Zhaofu Zhang

J. Appl. Phys. 134, 115302 (2023)

https://doi.org/10.1063/5.0163908

Published: September 2023

View article titled, Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study

Journal Articles

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Ruyue Cao, Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 134, 085302 (2023)

https://doi.org/10.1063/5.0154134

Published: August 2023

View article titled, Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Journal Articles

Theoretical predictions of the structural stability and property contrast for Sb-rich Ge₃Sb₆Te₅ phase-change materials

Jinhao Su, Zhaofu Zhang, Xuhao Wan, Wei Yu, Anyang Wang, Hongxia Zhong, John Robertson, Yuzheng Guo

Appl. Phys. Lett. 122, 252102 (2023)

https://doi.org/10.1063/5.0151179

Published: June 2023

View article titled, Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials

Includes: Supplementary data

Journal Articles

Metal–insulator transition of vanadium dioxide and the role of grain boundaries

Xuewei Zhang, Yuzheng Guo, Daping Chu, John Robertson

J. Appl. Phys. 133, 235306 (2023)

https://doi.org/10.1063/5.0149448

Published: June 2023

View article titled, Metal–insulator transition of vanadium dioxide and the role of grain boundaries

Journal Articles

Enhanced photovoltaic properties of halide perovskites due to multi-centered X–B–X bonding and p–p orbital coupling

Xuewei Zhang, Yuzheng Guo, Daping Chu, John Robertson

J. Appl. Phys. 133, 115701 (2023)

https://doi.org/10.1063/5.0139458

Published: March 2023

View article titled, Enhanced photovoltaic properties of halide perovskites due to multi-centered X–B–X bonding and p–p orbital coupling

Journal Articles

Revisiting the electronic and optical properties of SiO₂ polymorphs by hybrid functional calculations

Jiaqi Chen, Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 133, 044101 (2023)

https://doi.org/10.1063/5.0134576

Published: January 2023

View article titled, Revisiting the electronic and optical properties of SiO2 polymorphs by hybrid functional calculations

Journal Articles

Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA₂Z₄: A bond relaxation investigation

Yonghui Liu, Chen Shao, Wei Yu, Qingzhong Gui, John Robertson, Yuzheng Guo

Appl. Phys. Lett. 121, 244105 (2022)

https://doi.org/10.1063/5.0118029

Published: December 2022

View article titled, Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation

Includes: Supplementary data

Journal Articles

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Qingzhong Gui, Zhen Wang, Chunmin Cheng, Xiaoming Zha, John Robertson, Sheng Liu, Zhaofu Zhang, Yuzheng Guo

Appl. Phys. Lett. 121, 211601 (2022)

https://doi.org/10.1063/5.0117263

Published: November 2022

View article titled, Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Journal Articles

Metal contacts with Moire interfaces on WSe₂ for ambipolar applications

Jiaqi Chen, Zhaofu Zhang, Yuzheng Guo, John Robertson

Appl. Phys. Lett. 121, 051602 (2022)

https://doi.org/10.1063/5.0091504

Published: August 2022

View article titled, Metal contacts with Moire interfaces on WSe2 for ambipolar applications

Includes: Supplementary data

Journal Articles

Electronic properties of CaF₂ bulk and interfaces

Jiaqi Chen, Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 131, 215302 (2022)

https://doi.org/10.1063/5.0087914

Published: June 2022

View article titled, Electronic properties of CaF2 bulk and interfaces

Journal Articles

Tunable contacts and device performances in graphene/group-III monochalcogenides MX (M = In, Ga; X = S, Se) van der Waals heterostructures

Hailing Guo, Yiheng Yin, Huan Niu, John Robertson, Zhaofu Zhang, Yuzheng Guo

J. Appl. Phys. 130, 144303 (2021)

https://doi.org/10.1063/5.0062672

Published: October 2021

View article titled, Tunable contacts and device performances in graphene/group-III monochalcogenides MX (M = In, Ga; X = S, Se) van der Waals heterostructures

Includes: Supplementary data

Journal Articles

The metal–insulator phase change in vanadium dioxide and its applications

Haichang Lu, Stewart Clark, Yuzheng Guo, John Robertson

J. Appl. Phys. 129, 240902 (2021)

https://doi.org/10.1063/5.0027674

Published: June 2021

View article titled, The metal–insulator phase change in vanadium dioxide and its applications

Journal Articles

Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

Jiaqi Chen, Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 129, 175304 (2021)

https://doi.org/10.1063/5.0047447

Published: May 2021

View article titled, Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

Journal Articles

Electronic properties and tunability of the hexagonal SiGe alloys

Zhen Wang, Zhaofu Zhang, Sheng Liu, John Robertson, Yuzheng Guo

Appl. Phys. Lett. 118, 172101 (2021)

https://doi.org/10.1063/5.0044901

Published: April 2021

View article titled, Electronic properties and tunability of the hexagonal SiGe alloys

Includes: Supplementary data

Journal Articles

Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Zhaofu Zhang, Zhen Wang, Yuzheng Guo, John Robertson

Appl. Phys. Lett. 118, 031601 (2021)

https://doi.org/10.1063/5.0037241

Published: January 2021

View article titled, Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Journal Articles

Role of the third metal oxide in In–Ga–Zn–O₄ amorphous oxide semiconductors: Alternatives to gallium

Zhaofu Zhang, Yuzheng Guo, John Robertson

J. Appl. Phys. 128, 215704 (2020)

https://doi.org/10.1063/5.0032897

Published: December 2020

View article titled, Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium

Journal Articles

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

Guandong Bai, Kham M. Niang, John Robertson

J. Vac. Sci. Technol. A 38, 052402 (2020)

https://doi.org/10.1116/6.0000353

Published: July 2020

View article titled, Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

NARROW

Topics

Metal contacts and Schottky barriers at β-Ga₂O₃ interfaces: High-throughput-assisted first-principles calculations

Amorphous TeO₂ as p-type oxide semiconductor for device applications

High-throughput interface prediction and generation scheme: The case of β -Ga₂O₃/AlN interfaces

Metal contacts and Schottky barrier heights at boron arsenide interfaces: A first-principles study

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Theoretical predictions of the structural stability and property contrast for Sb-rich Ge₃Sb₆Te₅ phase-change materials

Metal–insulator transition of vanadium dioxide and the role of grain boundaries

Enhanced photovoltaic properties of halide perovskites due to multi-centered X–B–X bonding and p–p orbital coupling

Revisiting the electronic and optical properties of SiO₂ polymorphs by hybrid functional calculations

Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA₂Z₄: A bond relaxation investigation

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

Metal contacts with Moire interfaces on WSe₂ for ambipolar applications

Electronic properties of CaF₂ bulk and interfaces

Tunable contacts and device performances in graphene/group-III monochalcogenides MX (M = In, Ga; X = S, Se) van der Waals heterostructures

The metal–insulator phase change in vanadium dioxide and its applications

Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

Electronic properties and tunability of the hexagonal SiGe alloys

Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Role of the third metal oxide in In–Ga–Zn–O₄ amorphous oxide semiconductors: Alternatives to gallium

Preparation of atomic layer deposited vanadium dioxide thin films using tetrakis(ethylmethylamino) vanadium as precursor

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