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John Melngailis
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Journal Articles

Hot embossing of thick amorphous fluoropolymer for back end processing of infrared arrays

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Justin K. Markunas, Peter J. Smith, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 061601 (2012)
https://doi.org/10.1116/1.4757287
Published: October 2012
View article titled, Hot embossing of thick amorphous fluoropolymer for back end processing of infrared arrays
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Journal Articles

Gas-assisted focused electron beam and ion beam processing and fabrication

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Ivo Utke, Patrik Hoffmann, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1197–1276 (2008)
https://doi.org/10.1116/1.2955728
Published: August 2008
View article titled, Gas-assisted focused electron beam and ion beam processing and fabrication
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Journal Articles

Experimental investigation of electron transport properties of gallium nitride nanowires

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Abhishek Motayed, Albert V. Davydov, S. N. Mohammad, John Melngailis
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 024302 (2008)
https://doi.org/10.1063/1.2952035
Published: July 2008
View article titled, Experimental investigation of electron transport properties of gallium nitride nanowires
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Journal Articles

Photolithography using an optical microscope

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Ron Gonski, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 2451–2452 (2007)
https://doi.org/10.1116/1.2779046
Published: December 2007
View article titled, Photolithography using an optical microscope
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Journal Articles

Annealing of electron beam induced deposits of platinum from Pt ( PF 3 ) 4

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Matthew H. Ervin, Daniel Chang, Barbara Nichols, Alma Wickenden, John Barry, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 2250–2254 (2007)
https://doi.org/10.1116/1.2806978
Published: December 2007
View article titled, Annealing of electron beam induced deposits of platinum from Pt ( PF 3 ) 4
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Journal Articles

365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes

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Abhishek Motayed, Albert V. Davydov, Maoqi He, S. N. Mohammad, John Melngailis
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 183120 (2007)
https://doi.org/10.1063/1.2735928
Published: May 2007
View article titled, 365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes
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Journal Articles

Nanometer-scale material contrast imaging with a near-field microwave microscope

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Atif Imtiaz, Steven M. Anlage, John D. Barry, John Melngailis
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 143106 (2007)
https://doi.org/10.1063/1.2719164
Published: April 2007
View article titled, Nanometer-scale material contrast imaging with a near-field microwave microscope
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Journal Articles

Broadband dielectric microwave microscopy on micron length scales

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Alexander Tselev, Steven M. Anlage, Zhengkun Ma, John Melngailis
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 78, 044701 (2007)
https://doi.org/10.1063/1.2719613
Published: April 2007
View article titled, Broadband dielectric microwave microscopy on micron length scales
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Journal Articles

Diameter dependent transport properties of gallium nitride nanowire field effect transistors

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Abhishek Motayed, Mark Vaudin, Albert V. Davydov, John Melngailis, Maoqi He, S. N. Mohammad
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 043104 (2007)
https://doi.org/10.1063/1.2434153
Published: January 2007
View article titled, Diameter dependent transport properties of gallium nitride nanowire field effect transistors
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Journal Articles

Simple model for dielectrophoretic alignment of gallium nitride nanowires

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Abhishek Motayed, Maoqi He, Albert V. Davydov, John Melngailis, S. N. Mohammad
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 120–123 (2007)
https://doi.org/10.1116/1.2429673
Published: January 2007
View article titled, Simple model for dielectrophoretic alignment of gallium nitride nanowires
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Journal Articles

Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique

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Abhishek Motayed, Maoqi He, Albert V. Davydov, John Melngailis, S. N. Mohammad
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 114310 (2006)
https://doi.org/10.1063/1.2397383
Published: December 2006
View article titled, Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique
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Journal Articles

Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition

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Abhishek Motayed, Albert V. Davydov, Mark D. Vaudin, Igor Levin, John Melngailis, S. N. Mohammad
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 024306 (2006)
https://doi.org/10.1063/1.2215354
Published: July 2006
View article titled, Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition
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Journal Articles

Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates

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Anthony De Marco, William Bandy, Siavash Parsa, Henry Kaufmann, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 23, 2811–2815 (2005)
https://doi.org/10.1116/1.2091092
Published: December 2005
View article titled, Writing the identity in radio frequency identity tags with focused ion-beam implantation of transistor gates
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Journal Articles

Near-field microwave microscopy on nanometer length scales

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Atif Imtiaz, Marc Pollak, Steven M. Anlage, John D. Barry, John Melngailis
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 044302 (2005)
https://doi.org/10.1063/1.1844614
Published: January 2005
View article titled, Near-field microwave microscopy on nanometer length scales
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Journal Articles

Testing new chemistries for mask repair with focused ion beam gas assisted etching

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Andrei Stanishevsky, Klaus Edinger, Jon Orloff, John Melngailis, Diane Stewart, Alvina Williams, Richard Clark
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 3067–3071 (2003)
https://doi.org/10.1116/1.1624253
Published: December 2003
View article titled, Testing new chemistries for mask repair with focused ion beam gas assisted etching
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Journal Articles

Rapid imaging of nanotubes on insulating substrates

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T. Brintlinger, Yung-Fu Chen, T. Dürkop, Enrique Cobas, M. S. Fuhrer, John D. Barry, John Melngailis
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2454–2456 (2002)
https://doi.org/10.1063/1.1509113
Published: September 2002
View article titled, Rapid imaging of nanotubes on insulating substrates
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Journal Articles

Contact resistance of focused ion beam deposited platinum and tungsten films to silicon

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Anthony J. DeMarco, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 2543–2546 (2001)
https://doi.org/10.1116/1.1410094
Published: November 2001
View article titled, Contact resistance of focused ion beam deposited platinum and tungsten films to silicon
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Journal Articles

Lateral growth of focused ion beam deposited platinum for stencil mask repair

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Anthony J. DeMarco, John Melngailis
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 3154–3157 (1999)
https://doi.org/10.1116/1.590971
Published: November 1999
View article titled, Lateral growth of focused ion beam deposited platinum for stencil mask repair
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Journal Articles

Development of a high brightness gas field ion source

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Klaus Edinger, Victor Yun, John Melngailis, Jon Orloff, Gerald Magera
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 2365–2368 (1997)
https://doi.org/10.1116/1.589648
Published: November 1997
View article titled, Development of a high brightness gas field ion source
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Journal Articles

Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3

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C.‐H. Chen, V. Talyansky, C. Kwon, M. Rajeswari, R. P. Sharma, R. Ramesh, T. Venkatesan, John Melngailis, Z. Zhang, W. K. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 3089–3091 (1996)
https://doi.org/10.1063/1.117314
Published: November 1996
View article titled, Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3
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