Page 1 | Search Results | AIP Publishing

1-20 of 41

Sort by

Sort Order Select

Journal Articles

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

Yong Chan Jung, Jin-Hyun Kim, Heber Hernandez-Arriaga, Jaidah Mohan, Su Min Hwang, Dan N. Le, Akshay Sahota, Harrison Sejoon Kim, Kihyun Kim, Rino Choi, Chang-Yong Nam, Daniel Alvarez, Jr., Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim

Appl. Phys. Lett. 121, 222901 (2022)

https://doi.org/10.1063/5.0126695

Published: November 2022

View article titled, Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Journal Articles

High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Su Min Hwang, Harrison Sejoon Kim, Dan N. Le, Akshay Sahota, Jaebeom Lee, Yong Chan Jung, Sang Woo Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Jiyoung Kim

J. Vac. Sci. Technol. A 40, 022406 (2022)

https://doi.org/10.1116/6.0001519

Published: February 2022

View article titled, High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Journal Articles

Low-thermal-budget (300 °C) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing

Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim

Appl. Phys. Lett. 119, 242901 (2021)

https://doi.org/10.1063/5.0075466

Published: December 2021

View article titled, Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Includes: Supplementary data

Journal Articles

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim

AIP Advances 11, 115213 (2021)

https://doi.org/10.1063/5.0066311

Published: November 2021

View article titled, Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Includes: Supplementary data

Journal Articles

A new route of synthesizing atomically thin 2D materials embedded in bulk oxides

Jeongwoon Hwang, Jongchan Kim, Yifan Nie, Byoung Hun Lee, Jinho Ahn, Jiyoung Kim, Myung Mo Sung, Kyeongjae Cho

J. Appl. Phys. 130, 035302 (2021)

https://doi.org/10.1063/5.0055054

Published: July 2021

View article titled, A new route of synthesizing atomically thin 2D materials embedded in bulk oxides

Includes: Supplementary data

Journal Articles

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf_xZr_1−xO₂ thin films using synchrotron x-ray analysis

Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

APL Mater. 9, 031111 (2021)

https://doi.org/10.1063/5.0035848

Published: March 2021

View article titled, Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis

Includes: Supplementary data

Journal Articles

Ferroelectric polarization retention with scaling of Hf_0.5Zr_0.5O₂ on silicon

Jaidah Mohan, Heber Hernandez-Arriaga, Yong Chan Jung, Takashi Onaya, Chang-Yong Nam, Esther H. R. Tsai, Si Joon Kim, Jiyoung Kim

Appl. Phys. Lett. 118, 102903 (2021)

https://doi.org/10.1063/5.0035579

Published: March 2021

View article titled, Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

Includes: Supplementary data

Journal Articles

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf_xZr_1−xO₂/ZrO₂ bilayer by atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura

Appl. Phys. Lett. 117, 232902 (2020)

https://doi.org/10.1063/5.0029709

Published: December 2020

View article titled, Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Includes: Supplementary data

Journal Articles

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors

Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Su Min Hwang, Dushyant Narayan, Jae-Gil Lee, Chadwin D. Young, Luigi Colombo, Gary Goodman, Alan S. Wan, Pil-Ryung Cha, Scott R. Summerfelt, Tamer San, Jiyoung Kim

Appl. Phys. Lett. 115, 182901 (2019)

https://doi.org/10.1063/1.5126144

Published: October 2019

View article titled, Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Journal Articles

Low-voltage operation and high endurance of 5-nm ferroelectric Hf_0.5Zr_0.5O₂ capacitors

Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim

Appl. Phys. Lett. 113, 182903 (2018)

https://doi.org/10.1063/1.5052012

Published: October 2018

View article titled, Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Journal Articles

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf_0.5Zr_0.5O₂ films

Si Joon Kim, Jaidah Mohan, Jaebeom Lee, Joy S. Lee, Antonio T. Lucero, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim

Appl. Phys. Lett. 112, 172902 (2018)

https://doi.org/10.1063/1.5026715

Published: April 2018

View article titled, Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Journal Articles

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

Jeongwoon Hwang, Young Jun Oh, Jiyoung Kim, Myung Mo Sung, Kyeongjae Cho

J. Appl. Phys. 123, 154301 (2018)

https://doi.org/10.1063/1.5024200

Published: April 2018

View article titled, Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

Includes: Supplementary data

Journal Articles

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe₂

Ava Khosravi, Rafik Addou, Christopher M. Smyth, Ruoyu Yue, Christopher R. Cormier, Jiyoung Kim, Christopher L. Hinkle, Robert M. Wallace

APL Mater. 6, 026603 (2018)

https://doi.org/10.1063/1.5002132

Published: January 2018

View article titled, Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Includes: Supplementary data

Journal Articles

Large ferroelectric polarization of TiN/Hf_0.5Zr_0.5O₂/TiN capacitors due to stress-induced crystallization at low thermal budget

Si Joon Kim, Dushyant Narayan, Jae-Gil Lee, Jaidah Mohan, Joy S. Lee, Jaebeom Lee, Harrison S. Kim, Young-Chul Byun, Antonio T. Lucero, Chadwin D. Young, Scott R. Summerfelt, Tamer San, Luigi Colombo, Jiyoung Kim

Appl. Phys. Lett. 111, 242901 (2017)

https://doi.org/10.1063/1.4995619

Published: December 2017

View article titled, Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Includes: Supplementary data

Journal Articles

Low temperature (100 °C) atomic layer deposited-ZrO₂ for recessed gate GaN HEMTs on Si

Young-Chul Byun, Jae-Gil Lee, Xin Meng, Joy S. Lee, Antonio T. Lucero, Si Joon Kim, Chadwin D. Young, Moon J. Kim, Jiyoung Kim

Appl. Phys. Lett. 111, 082905 (2017)

https://doi.org/10.1063/1.4998729

Published: August 2017

View article titled, Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Journal Articles

Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films

Tae Joo Park, Young-Chul Byun, Robert M. Wallace, Jiyoung Kim

J. Chem. Phys. 146, 052821 (2017)

https://doi.org/10.1063/1.4975083

Published: February 2017

View article titled, Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

Journal Articles

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hyeon Jun Hwang, Min-Woo Ha, Jiyoung Kim

Appl. Phys. Lett. 106, 123101 (2015)

https://doi.org/10.1063/1.4916510

Published: March 2015

View article titled, Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

Journal Articles

A crystalline oxide passivation for Al₂O₃/AlGaN/GaN

Xiaoye Qin, Hong Dong, Jiyoung Kim, Robert M. Wallace

Appl. Phys. Lett. 105, 141604 (2014)

https://doi.org/10.1063/1.4897641

Published: October 2014

View article titled, A crystalline oxide passivation for Al2O3/AlGaN/GaN

Includes: Supplementary data

Journal Articles

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al₂O₃/AlGaN/GaN stacks

Xiaoye Qin, Antonio Lucero, Angelica Azcatl, Jiyoung Kim, Robert M. Wallace

Appl. Phys. Lett. 105, 011602 (2014)

https://doi.org/10.1063/1.4887056

Published: July 2014

View article titled, In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks

Journal Articles

MoS₂ functionalization for ultra-thin atomic layer deposited dielectrics

Angelica Azcatl, Stephen McDonnell, Santosh K. C., Xin Peng, Hong Dong, Xiaoye Qin, Rafik Addou, Greg I. Mordi, Ning Lu, Jiyoung Kim, Moon J. Kim, Kyeongjae Cho, Robert M. Wallace

Appl. Phys. Lett. 104, 111601 (2014)

https://doi.org/10.1063/1.4869149

Published: March 2014

View article titled, MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Includes: Supplementary data

NARROW

Topics

Robust low-temperature (350 °C) ferroelectric Hf_0.5Zr_0.5O₂ fabricated using anhydrous H₂O₂ as the ALD oxidant

High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Low-thermal-budget (300 °C) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

A new route of synthesizing atomically thin 2D materials embedded in bulk oxides

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf_xZr_1−xO₂ thin films using synchrotron x-ray analysis

Ferroelectric polarization retention with scaling of Hf_0.5Zr_0.5O₂ on silicon

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf_xZr_1−xO₂/ZrO₂ bilayer by atomic layer deposition

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors

Low-voltage operation and high endurance of 5-nm ferroelectric Hf_0.5Zr_0.5O₂ capacitors

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf_0.5Zr_0.5O₂ films

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe₂

Large ferroelectric polarization of TiN/Hf_0.5Zr_0.5O₂/TiN capacitors due to stress-induced crystallization at low thermal budget

Low temperature (100 °C) atomic layer deposited-ZrO₂ for recessed gate GaN HEMTs on Si

Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

A crystalline oxide passivation for Al₂O₃/AlGaN/GaN

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al₂O₃/AlGaN/GaN stacks

MoS₂ functionalization for ultra-thin atomic layer deposited dielectrics

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only