1-20 of 25
Jitsuo Ohta
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka
Journal: APL Materials
APL Mater. 6, 111103 (2018)
https://doi.org/10.1063/1.5051555
Published: November 2018
View article titled, Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering
Open the PDF for Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering in another window
Journal Articles

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Journal: APL Materials
APL Mater. 5, 126102 (2017)
https://doi.org/10.1063/1.5008913
Published: December 2017
View article titled, Electron transport properties of degenerate <em>n</em>-type GaN prepared by pulsed sputtering
Open the PDF for Electron transport properties of degenerate <em>n</em>-type GaN prepared by pulsed sputtering in another window
Journal Articles

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

Jitsuo Ohta, Hiroshi Fujioka
Journal: APL Materials
APL Mater. 5, 076107 (2017)
https://doi.org/10.1063/1.4995652
Published: July 2017
View article titled, Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
Open the PDF for Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation in another window
Journal Articles

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, Hiroshi Fujioka
Journal: APL Materials
APL Mater. 5, 026102 (2017)
https://doi.org/10.1063/1.4975617
Published: February 2017
View article titled, N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering
Open the PDF for N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering in another window
Journal Articles

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Editor’s Pick
Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 042103 (2017)
https://doi.org/10.1063/1.4975056
Published: January 2017
View article titled, Electrical properties of Si-doped GaN prepared using pulsed sputtering
Open the PDF for Electrical properties of Si-doped GaN prepared using pulsed sputtering in another window
Journal Articles

High-current-density indium nitride ultrathin-film transistors on glass substrates

Takeki Itoh, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 142104 (2016)
https://doi.org/10.1063/1.4964422
Published: October 2016
View article titled, High-current-density indium nitride ultrathin-film transistors on glass substrates
Open the PDF for High-current-density indium nitride ultrathin-film transistors on glass substrates in another window
Journal Articles

Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors

Atsushi Kobayashi, Khe Shin Lye, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 085709 (2016)
https://doi.org/10.1063/1.4961876
Published: August 2016
View article titled, Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors
Open the PDF for Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal–insulator–semiconductor field-effect transistors in another window
Journal Articles

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Yasuaki Arakawa, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Journal: APL Materials
APL Mater. 4, 086103 (2016)
https://doi.org/10.1063/1.4960485
Published: August 2016
View article titled, High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
Open the PDF for High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering in another window
Journal Articles

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

Khe Shin Lye, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 032106 (2016)
https://doi.org/10.1063/1.4959777
Published: July 2016
View article titled, InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature
Open the PDF for InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature in another window
Journal Articles

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Eiji Nakamura, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 051121 (2014)
https://doi.org/10.1063/1.4864283
Published: February 2014
View article titled, Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique
Open the PDF for Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique in another window
Journal Articles

Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192111 (2013)
https://doi.org/10.1063/1.4829478
Published: November 2013
View article titled, Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO
Open the PDF for Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO in another window
Journal Articles

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

Kana Okubo, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 022103 (2013)
https://doi.org/10.1063/1.4776210
Published: January 2013
View article titled, Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers
Open the PDF for Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers in another window
Journal Articles

Polarity replication across m-plane GaN/ZnO interfaces

Atsushi Kobayashi, Tsuyoshi Ohnishi, Mikk Lippmaa, Yasuhiro Oda, Akira Ishii, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 181910 (2011)
https://doi.org/10.1063/1.3659008
Published: November 2011
View article titled, Polarity replication across <em>m</em>-plane GaN/ZnO interfaces
Open the PDF for Polarity replication across <em>m</em>-plane GaN/ZnO interfaces in another window
Journal Articles

Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates

Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 121906 (2011)
https://doi.org/10.1063/1.3641876
Published: September 2011
View article titled, Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al<sub>0.83</sub>Ga<sub>0.17</sub>N/AlN on ZnO substrates
Open the PDF for Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al<sub>0.83</sub>Ga<sub>0.17</sub>N/AlN on ZnO substrates in another window
Journal Articles

Dependence on composition of the optical polarization properties of m-plane InxGa1−xN commensurately grown on ZnO

Hiroaki Tamaki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 061912 (2011)
https://doi.org/10.1063/1.3624462
Published: August 2011
View article titled, Dependence on composition of the optical polarization properties of <em>m</em>-plane In<em><sub>x</sub></em>Ga<sub>1−</sub><em><sub>x</sub></em>N commensurately grown on ZnO
Open the PDF for Dependence on composition of the optical polarization properties of <em>m</em>-plane In<em><sub>x</sub></em>Ga<sub>1−</sub><em><sub>x</sub></em>N commensurately grown on ZnO in another window
Journal Articles

Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

Atsushi Kobayashi, Satoshi Kawano, Kohei Ueno, Jitsuo Ohta, Hiroshi Fujioka, Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 191905 (2007)
https://doi.org/10.1063/1.2809361
Published: November 2007
View article titled, Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
Open the PDF for Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer in another window
Journal Articles

Epitaxial growth mechanisms of AlN on SiC substrates at room temperature

Myunghee Kim, Jitsuo Ohta, Atsushi Kobayashi, Hiroshi Fujioka, Masaharu Oshima
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 151903 (2007)
https://doi.org/10.1063/1.2795804
Published: October 2007
View article titled, Epitaxial growth mechanisms of AlN on SiC substrates at room temperature
Open the PDF for Epitaxial growth mechanisms of AlN on SiC substrates at room temperature in another window
Journal Articles

Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers

Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka, Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 081915 (2007)
https://doi.org/10.1063/1.2775035
Published: August 2007
View article titled, Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
Open the PDF for Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers in another window
Journal Articles

Low temperature epitaxial growth of GaN films on LiGa O 2 substrates

Kento Sakurada, Atsushi Kobayashi, Yuji Kawaguchi, Jitsuo Ohta, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 211913 (2007)
https://doi.org/10.1063/1.2737928
Published: May 2007
View article titled, Low temperature epitaxial growth of GaN films on LiGa O 2 substrates
Open the PDF for Low temperature epitaxial growth of GaN films on LiGa O 2 substrates in another window
Journal Articles

Growth temperature dependence of structural properties of AlN films on ZnO ( 000 1 ¯ ) substrates

Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 141908 (2007)
https://doi.org/10.1063/1.2719167
Published: April 2007
View article titled, Growth temperature dependence of structural properties of AlN films on ZnO ( 000 1 ¯ ) substrates
Open the PDF for Growth temperature dependence of structural properties of AlN films on ZnO ( 000 1 ¯ ) substrates in another window