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Journal Articles

Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon

Open Access
Vamshi Kiran Gogi, Christopher Chae, Abhijeet Barua, Jinwoo Hwang, Rashmi Jha
Journal: APL Materials
APL Mater. 13, 051122 (2025)
https://doi.org/10.1063/5.0246797
Published: May 2025
View articletitled, Understanding ferroelectricity in sputtered aluminum nitride thin films on silicon
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Journal Articles

Thermal annealing and radiation effects on structural and electrical properties of NbN/GaN superconductor/semiconductor junction

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Stephen Margiotta, Binzhi Liu, Saleh Ahmed Khan, Gabriel Calderon Ortiz, Ahmed Ibreljic, Jinwoo Hwang, A. F. M. Anhar Uddin Bhuiyan
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 042701 (2025)
https://doi.org/10.1116/6.0004539
Published: May 2025
View articletitled, Thermal annealing and radiation effects on structural and electrical properties of NbN/GaN superconductor/semiconductor junction
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Journal Articles

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

Open Access
A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu, Sushovan Dhara, Hsien-Lien Huang, Vijay Gopal Thirupakuzi Vangipuram, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 174101 (2025)
https://doi.org/10.1063/5.0256525
Published: May 2025
View articletitled, Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
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Journal Articles

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

Open Access
Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Ilteris K. Turan, Nichole Hoven, Walter R. L. Lambrecht, Jinwoo Hwang, Yumi Ijiri, Hongping Zhao, Kathleen Kash
Journal: APL Materials
APL Mater. 13, 041127 (2025)
https://doi.org/10.1063/5.0265613
Published: April 2025
View articletitled, Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
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Journal Articles

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

Open Access
Kingsley Egbo, William A. Callahan, Shahadat Sohel, Chris Chae, Brooks Tellekamp, Jinwoo Hwang, Andriy Zakutayev
Journal: APL Energy
APL Energy 3, 016104 (2025)
https://doi.org/10.1063/5.0251435
Published: March 2025
View articletitled, Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes
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Journal Articles

Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications

FeaturedOpen Access
Kyle J. Liddy, Weisong Wang, Stefan Nikodemski, Chris Chae, Kevin D. Leedy, Jean-Pierre Bega, Nolan S. Hendricks, Elizabeth A. Sowers, Ahmad E. Islam, Jinwoo Hwang, Siddharth Rajan, Andrew J. Green
Journal: APL Electronic Devices
APL Electronic Devices 1, 016112 (2025)
https://doi.org/10.1063/5.0250731
Published: March 2025
View articletitled, Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
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Journal Articles

Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes

Open Access
Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Dong Su Yu, Lingyu Meng, Christopher Chae, Yibo Xu, Jinwoo Hwang, Wu Lu, Hongping Zhao
Journal: APL Electronic Devices
APL Electronic Devices 1, 016115 (2025)
https://doi.org/10.1063/5.0255443
Published: March 2025
View articletitled, Ultrawide bandgap LiGa5O8/β-Ga2O3 heterojunction p–n diodes
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Journal Articles

Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN

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Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062107 (2025)
https://doi.org/10.1063/5.0230220
Published: February 2025
View articletitled, Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
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Journal Articles

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes

Open Access
Daram N. Ramdin, Hsien-Lien Huang, Christopher Chae, Sushovan Dhara, Siddharth Rajan, Jinwoo Hwang, Leonard J. Brillson
Journal: APL Materials
APL Mater. 12, 101118 (2024)
https://doi.org/10.1063/5.0228825
Published: October 2024
View articletitled, Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes
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Journal Articles

Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes

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Manisha Muduli, Yongkang Xia, Seunghyun Lee, Nathan Gajowski, Chris Chae, Siddharth Rajan, Jinwoo Hwang, Shamsul Arafin, Sanjay Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 171103 (2024)
https://doi.org/10.1063/5.0230901
Published: October 2024
View articletitled, Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes
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Journal Articles

Structural and electrical properties of grafted Si/GaAsSb heterojunction

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Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Yifan Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 101107 (2024)
https://doi.org/10.1063/5.0225069
Published: September 2024
View articletitled, Structural and electrical properties of grafted Si/GaAsSb heterojunction
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Journal Articles

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films

Open Access
Shuyu Cheng, Binzhi Liu, Igor Lyalin, Wenyi Zhou, Jinwoo Hwang, Roland K. Kawakami
Journal: APL Materials
APL Mater. 12, 041129 (2024)
https://doi.org/10.1063/5.0182595
Published: April 2024
View articletitled, Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films
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Includes: Supplementary data
Journal Articles

NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature

FeaturedOpen Access
Kingsley Egbo, Emily M. Garrity, William A. Callahan, Chris Chae, Cheng-Wei Lee, Brooks Tellekamp, Jinwoo Hwang, Vladan Stevanovic, Andriy Zakutayev
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173512 (2024)
https://doi.org/10.1063/5.0194540
Published: April 2024
View articletitled, NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature
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Includes: Supplementary data
Journal Articles

Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface

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Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram, Christopher Chae, Jinwoo Hwang, Hongping Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 122106 (2024)
https://doi.org/10.1063/5.0200125
Published: March 2024
View articletitled, Experimental determination of the band offsets at the UWBG p-LiGa5O8/Ga2O3 interface
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Includes: Supplementary data
Journal Articles

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

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Kaitian Zhang, Chenxi Hu, Vijay Gopal Thirupakuzi Vangipuram, Lingyu Meng, Christopher Chae, Menglin Zhu, Jinwoo Hwang, Kathleen Kash, Hongping Zhao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062207 (2023)
https://doi.org/10.1116/6.0003141
Published: November 2023
View articletitled, Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
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Journal Articles

Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

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Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 083504 (2023)
https://doi.org/10.1063/5.0146567
Published: August 2023
View articletitled, Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3
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Includes: Supplementary data
Journal Articles

Atomic scale mechanism of β to γ phase transformation in gallium oxide

Editor’s PickFree
Hsien-Lien Huang, Jared M. Johnson, Christopher Chae, Alexander Senckowski, Man Hoi Wong, Jinwoo Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 251602 (2023)
https://doi.org/10.1063/5.0156009
Published: June 2023
View articletitled, Atomic scale mechanism of β to γ phase transformation in gallium oxide
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Includes: Supplementary data
Journal Articles

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Open Access
Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Journal: APL Materials
APL Mater. 11, 061113 (2023)
https://doi.org/10.1063/5.0134467
Published: June 2023
View articletitled, Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3
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Includes: Supplementary data
Journal Articles

Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates

Open Access
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Journal: APL Materials
APL Mater. 11, 041112 (2023)
https://doi.org/10.1063/5.0142746
Published: April 2023
View articletitled, Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
Open the PDF for Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates in another window
Book Chapter

Defects in β-Ga2O3: Theory and Microscopic Studies

Available to Purchase

Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Open the PDF for Defects in β-Ga<sub>2</sub>O<sub>3</sub>: Theory and Microscopic Studies in another window