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Journal Articles

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

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Clarence Y. Chan, Jan Paul Menzel, Yicong Dong, Zhuoran Long, Aadil Waseem, Xihang Wu, Yixin Xiao, Jinqiao Xie, Edmond K. C. Chow, Shaloo Rakheja, Victor S. Batista, Zetian Mi, Xiuling Li
Journal: Applied Physics Reviews
Appl. Phys. Rev. 11, 021416 (2024)
https://doi.org/10.1063/5.0186709
Published: April 2024
View articletitled, Demystifying metal-assisted chemical etching of GaN and related heterojunctions
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Includes: Supplementary data
Journal Articles

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

Open Access
Zhongtao Zhu, Lina Cao, Adam Jönsson, Pengcheng Xu, Jinqiao Xie, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 173509 (2024)
https://doi.org/10.1063/5.0202565
Published: April 2024
View articletitled, Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes
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Journal Articles

Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN

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Ming Xiao, Xiaodong Yan, Jinqiao Xie, Edward Beam, Yu Cao, Han Wang, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 183502 (2020)
https://doi.org/10.1063/5.0021374
Published: November 2020
View articletitled, Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
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Journal Articles

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

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Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 053503 (2020)
https://doi.org/10.1063/1.5139906
Published: February 2020
View articletitled, Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN
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Journal Articles

Activation of buried p-GaN in MOCVD-regrown vertical structures

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Wenshen Li, Kazuki Nomoto, Kevin Lee, S. M. Islam, Zongyang Hu, Mingda Zhu, Xiang Gao, Jinqiao Xie, Manyam Pilla, Debdeep Jena, Huili Grace Xing
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 062105 (2018)
https://doi.org/10.1063/1.5041879
Published: August 2018
View articletitled, Activation of buried p-GaN in MOCVD-regrown vertical structures
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Journal Articles

High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

Open Access
Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Robert McCarthy, Chris Youtsey, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 023502 (2018)
https://doi.org/10.1063/1.5035267
Published: July 2018
View articletitled, High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
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Journal Articles

Thin-film GaN Schottky diodes formed by epitaxial lift-off

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Jingshan Wang, Chris Youtsey, Robert McCarthy, Rekha Reddy, Noah Allen, Louis Guido, Jinqiao Xie, Edward Beam, Patrick Fay
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 173503 (2017)
https://doi.org/10.1063/1.4982250
Published: April 2017
View articletitled, Thin-film GaN Schottky diodes formed by epitaxial lift-off
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Journal Articles

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

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Zachary Bryan, Isaac Bryan, Jinqiao Xie, Seiji Mita, Zlatko Sitar, Ramón Collazo
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 142107 (2015)
https://doi.org/10.1063/1.4917540
Published: April 2015
View articletitled, High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
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Journal Articles

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

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Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Ronny Kirste, Zlatko Sitar, Ramón Collazo, Douglas L. Irving
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 202106 (2014)
https://doi.org/10.1063/1.4878657
Published: May 2014
View articletitled, The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
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Journal Articles

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

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Wei Guo, Zachary Bryan, Jinqiao Xie, Ronny Kirste, Seiji Mita, Isaac Bryan, Lindsay Hussey, Milena Bobea, Brian Haidet, Michael Gerhold, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 103108 (2014)
https://doi.org/10.1063/1.4868678
Published: March 2014
View articletitled, Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
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Journal Articles

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

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Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramón Collazo, Douglas L. Irving
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 161901 (2013)
https://doi.org/10.1063/1.4824731
Published: October 2013
View articletitled, Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
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Journal Articles

Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103 , 013701 (2013)]

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Matthew S. Makowski, Isaac Bryan, Zlatko Sitar, Consuelo Arellano, Jinqiao Xie, Ramon Collazo, Albena Ivanisevic
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 089902 (2013)
https://doi.org/10.1063/1.4819200
Published: August 2013
View articletitled, Erratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103 , 013701 (2013)]
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Journal Articles

Kinase detection with gallium nitride based high electron mobility transistors

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Matthew S. Makowski, Isaac Bryan, Zlatko Sitar, Consuelo Arellano, Jinqiao Xie, Ramon Collazo, Albena Ivanisevic
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 013701 (2013)
https://doi.org/10.1063/1.4812987
Published: July 2013
View articletitled, Kinase detection with gallium nitride based high electron mobility transistors
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Includes: Supplementary data
Journal Articles

Polarity control and growth of lateral polarity structures in AlN

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Ronny Kirste, Seiji Mita, Lindsay Hussey, Marc P. Hoffmann, Wei Guo, Isaac Bryan, Zachary Bryan, James Tweedie, Jinqiao Xie, Michael Gerhold, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 181913 (2013)
https://doi.org/10.1063/1.4804575
Published: May 2013
View articletitled, Polarity control and growth of lateral polarity structures in AlN
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Journal Articles

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

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Jinqiao Xie, Seiji Mita, Zachary Bryan, Wei Guo, Lindsay Hussey, Baxter Moody, Raoul Schlesser, Ronny Kirste, Michael Gerhold, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 171102 (2013)
https://doi.org/10.1063/1.4803689
Published: April 2013
View articletitled, Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
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Journal Articles

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

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Lindsay Hussey, Seiji Mita, Jinqiao Xie, Wei Guo, Christer-Rajiv Akouala, Joseph Rajan, Isaac Bryan, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 113513 (2012)
https://doi.org/10.1063/1.4768526
Published: December 2012
View articletitled, Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition
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Journal Articles

On the origin of the 265 nm absorption band in AlN bulk crystals

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Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Douglas L. Irving, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 191914 (2012)
https://doi.org/10.1063/1.4717623
Published: May 2012
View articletitled, On the origin of the 265 nm absorption band in AlN bulk crystals
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Journal Articles

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

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Ronny Kirste, Ramón Collazo, Gordon Callsen, Markus R. Wagner, Thomas Kure, Juan Sebastian Reparaz, Seji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Zlatko Sitar, Axel Hoffmann
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 093503 (2011)
https://doi.org/10.1063/1.3656987
Published: November 2011
View articletitled, Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
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Journal Articles

On the strain in n-type GaN

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Jinqiao Xie, Seiji Mita, Lindsay Hussey, Anthony Rice, James Tweedie, James LeBeau, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 141916 (2011)
https://doi.org/10.1063/1.3647772
Published: October 2011
View articletitled, On the strain in n-type GaN
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Journal Articles

Strain in Si doped GaN and the Fermi level effect

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Jinqiao Xie, Seiji Mita, Anthony Rice, James Tweedie, Lindsay Hussey, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 202101 (2011)
https://doi.org/10.1063/1.3589978
Published: May 2011
View articletitled, Strain in Si doped GaN and the Fermi level effect
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