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Journal Articles

A 614 MW/cm² AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

Heyuan Chen, Tao Zhang, Huake Su, Xiangdong Li, Shengrui Xu, Yachao Zhang, Ruowei Liu, Lei Xie, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 126, 012112 (2025)

https://doi.org/10.1063/5.0248171

Published: January 2025

View article titled, A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

Journal Articles

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Jiahao Chen, Tao Zhang, Huake Su, Shengrui Xu, Zeyang Ren, Yu Du, Xiangdong Li, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 125, 233505 (2024)

https://doi.org/10.1063/5.0245557

Published: December 2024

View article titled, Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Journal Articles

Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

Ga Zhang, Shenglei Zhao, Xiufeng Song, Longyang Yu, Xuejing Sun, Chuangzhe Cao, Shuzhen You, Zhihong Liu, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 125, 192108 (2024)

https://doi.org/10.1063/5.0237694

Published: November 2024

View article titled, Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

Journal Articles

P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment

Zhaofeng Wang, Jin Li, Zhihong Liu, Xiaojin Chen, Mei Xu, Shuning Xu, Hu Wei, Xing Chen, Weichuan Xing, Weihang Zhang, Shenglei Zhao, Xiangdong Li, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 125, 172101 (2024)

https://doi.org/10.1063/5.0235346

Published: October 2024

View article titled, P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment

Journal Articles

Reversal barrier and ferroelectric polarization of strained wurtzite Al₁₋_xSc_xN ferroelectric alloys

Yixin Xue, Dongsheng Cui, Mengyang Kang, Yifei Wang, Hong Zhang, Haidong Yuan, Xiangxiang Gao, Jie Su, Zhenhua Lin, Jinshui Miao, Jincheng Zhang, Yue Hao, Jingjing Chang

Appl. Phys. Lett. 125, 152106 (2024)

https://doi.org/10.1063/5.0226521

Published: October 2024

View article titled, Reversal barrier and ferroelectric polarization of strained wurtzite Al1−xScxN ferroelectric alloys

Journal Articles

Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells

Yue Liu, Huamei Zhang, Rutao Meng, Jiabin Dong, Xuejun Xu, Jincheng Zhang, Yi Zhang

J. Chem. Phys. 161, 124709 (2024)

https://doi.org/10.1063/5.0232512

Published: September 2024

View article titled, Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells

Journal Articles

Numerical study of shock-induced thermochemical nonequilibrium effects in a high Mach flow field

Jincheng Zhang (张锦成), Zhenguo Wang (王振国), Chao-Yang Liu (刘朝阳), Mingbo Sun (孙明波), Hongbo Wang (汪洪波), Junding Ai (艾俊町)

Physics of Fluids 36, 096128 (2024)

https://doi.org/10.1063/5.0229000

Published: September 2024

View article titled, Numerical study of shock-induced thermochemical nonequilibrium effects in a high Mach flow field

Journal Articles

Combustion modes of kerosene spray in a scramjet combustor with different injection schemes

Fan Li (李凡), Jincheng Zhang (张锦成), Guoyan Zhao (赵国焱), Mingbo Sun (孙明波), Fei Li (李非), Guangwei Ma (马光伟), Mingjiang Liu (刘铭江)

Physics of Fluids 36, 096104 (2024)

https://doi.org/10.1063/5.0226604

Published: September 2024

View article titled, Combustion modes of kerosene spray in a scramjet combustor with different injection schemes

Journal Articles

Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

Qin Lu, Tianxiang Guo, Meiqi Wang, Junsen Huang, Jiao Fu, Haifeng Chen, Shaoqing Wang, Xiangtai Liu, Yifan Jia, Lijun Li, Jincheng Zhang, Yue Hao

J. Appl. Phys. 136, 043307 (2024)

https://doi.org/10.1063/5.0213385

Published: July 2024

View article titled, Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

Journal Articles

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Ailing Pan, Sijie Bu, Yuehua Hong, Jincheng Zhang, Lixin Guo, Xiaohua Ma, Yue Hao

Appl. Phys. Lett. 124, 193503 (2024)

https://doi.org/10.1063/5.0204051

Published: May 2024

View article titled, On-state electrical stress-induced degradation of NiO/β-Ga2O3 heterojunction pn diodes

Journal Articles

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao

Appl. Phys. Lett. 124, 173506 (2024)

https://doi.org/10.1063/5.0189890

Published: April 2024

View article titled, Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Journal Articles

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

Huake Su, Tao Zhang, Shengrui Xu, Hongchang Tao, Yuan Gao, Xu Liu, Lei Xie, Peng Xiang, Kai Cheng, Yue Hao, Jincheng Zhang

Appl. Phys. Lett. 124, 162102 (2024)

https://doi.org/10.1063/5.0187064

Published: April 2024

View article titled, An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Journal Articles

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Dongsheng Cui, Zhenhua Lin, Mengyang Kang, Yifei Wang, Xiangxiang Gao, Jie Su, Jinshui Miao, Jincheng Zhang, Yue Hao, Jingjing Chang

Appl. Phys. Lett. 124, 122107 (2024)

https://doi.org/10.1063/5.0199946

Published: March 2024

View article titled, High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure

Includes: Supplementary data

Journal Articles

Broadband transmissive polarization rotator by gradiently twisted α -MoO₃

Songyan Hou, Hao Hu, Zhihong Liu, Weichuan Xing, Jincheng Zhang

Appl. Phys. Lett. 124, 111107 (2024)

https://doi.org/10.1063/5.0191145

Published: March 2024

View article titled, Broadband transmissive polarization rotator by gradiently twisted α -MoO3

Includes: Supplementary data

Journal Articles

Enhancing the quality of homoepitaxial ( − 201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium

Yao Wang, Jiale Li, Tao Zhang, Wenkai Wu, Wenji Li, Yixin Yao, Ziming Wang, Qian Feng, Yachao Zhang, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 072105 (2024)

https://doi.org/10.1063/5.0189586

Published: February 2024

View article titled, Enhancing the quality of homoepitaxial ( − 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

Includes: Supplementary data

Journal Articles

Record peak current density of over 1500 kA/cm² in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Fang Liu, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMao Li, RenJie Liu, Zhuang Guo, Kai Zhang, JinCheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 073501 (2024)

https://doi.org/10.1063/5.0180145

Published: February 2024

View article titled, Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Journal Articles

Erratum: “Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Hanghai Du, Zhihong Liu, Lu Hao, Weichuan Xing, Weihang Zhang, Hong Zhou, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 124, 039902 (2024)

https://doi.org/10.1063/5.0195385

Published: January 2024

View article titled, Erratum: “Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Journal Articles

Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

Yixin Yao, Yachao Zhang, Jiaduo Zhu, Kui Dang, Chunxu Su, Jinbang Ma, Kai Chen, Baiqi Wang, Wenjun Liu, Shengrui Xu, Shenglei Zhao, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 123, 202104 (2023)

https://doi.org/10.1063/5.0172376

Published: November 2023

View article titled, Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

Journal Articles

Demonstration of the normally off β -Ga₂O₃ MOSFET with high threshold voltage and high current density

Yuncong Cai, Zhaoqing Feng, Zhengxing Wang, Xiufeng Song, Zhuangzhuang Hu, Xusheng Tian, Chunfu Zhang, Zhihong Liu, Qian Feng, Hong Zhou, Jincheng Zhang, Yue Hao

Appl. Phys. Lett. 123, 193501 (2023)

https://doi.org/10.1063/5.0165780

Published: November 2023

View article titled, Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

Journal Articles

Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization

Xiaoxiao Zhu, Wei Lu, Chi Zhang, Xuan Cui, Jing Ning, Jincheng Zhang, Dong Wang, Yue Hao

Appl. Phys. Lett. 123, 181101 (2023)

https://doi.org/10.1063/5.0170668

Published: October 2023

View article titled, Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization

Includes: Supplementary data

NARROW

Topics

A 614 MW/cm² AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer

P-GaN-gate GaN power high-electron mobility transistors with Mg-acceptor Re-passivation realized by ammonia plasma treatment

Reversal barrier and ferroelectric polarization of strained wurtzite Al₁₋_xSc_xN ferroelectric alloys

Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells

Numerical study of shock-induced thermochemical nonequilibrium effects in a high Mach flow field

Combustion modes of kerosene spray in a scramjet combustor with different injection schemes

Plasma refractive index sensor based on MIM waveguide coupled with analogy T-shaped and double-ring resonators

On-state electrical stress-induced degradation of NiO/β-Ga₂O₃ heterojunction pn diodes

Low turn-on voltage and 2.3 kV β -Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high I_ON/I_OFF ratio and steep subthreshold swing

High performance low power multilevel oxide based RRAM devices based on TiO_xN_y/Ga₂O₃ hybrid structure

Broadband transmissive polarization rotator by gradiently twisted α -MoO₃

Enhancing the quality of homoepitaxial ( − 201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium

Record peak current density of over 1500 kA/cm² in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Erratum: “Low ohmic contact resistivity realized by in situ SiN_x insertion for high Al-composition-AlGaN/GaN heterostructure” [Appl. Phys. Lett. 121 , 172102 (2022)]

Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity

Demonstration of the normally off β -Ga₂O₃ MOSFET with high threshold voltage and high current density

Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization

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