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Journal Articles

Electrically driven on-chip transferrable micro-LEDs

Byung-Ju Min, Yeon-Ji Kim, Jae-Hyuck Choi, Min-Woo Kim, Kyong-Tae Park, Dong Jin Jang, Jin Sik Choi, You-Shin No

Appl. Phys. Lett. 121, 241107 (2022)

https://doi.org/10.1063/5.0111362

Published: December 2022

View article titled, Electrically driven on-chip transferrable micro-LEDs

Includes: Supplementary data

Journal Articles

High performance ferroelectric ZnO thin film transistor using AlO_x/HfZrO/ZrO_x gate insulator by spray pyrolysis

Md Mehedi Hasan, Mohit, Jinbaek Bae, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang

Appl. Phys. Lett. 119, 093502 (2021)

https://doi.org/10.1063/5.0058127

Published: August 2021

View article titled, High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

Journal Articles

Solution processed high performance ferroelectric Hf_0.5Zr_0.5O₂ thin film transistor on glass substrate

Md. Mehedi Hasan, Chang Won Ahn, Tae Heon Kim, Jin Jang

Appl. Phys. Lett. 118, 152901 (2021)

https://doi.org/10.1063/5.0035653

Published: April 2021

View article titled, Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate

Journal Articles

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Jae Gwang Um, Jin Jang

Appl. Phys. Lett. 112, 162104 (2018)

https://doi.org/10.1063/1.5007191

Published: April 2018

View article titled, Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Journal Articles

Control of O-H bonds at a-IGZO/SiO₂ interface by long time thermal annealing for highly stable oxide TFT

Jae Kwon Jeon, Jae Gwang Um, Suhui Lee, Jin Jang

AIP Advances 7, 125110 (2017)

https://doi.org/10.1063/1.5008435

Published: December 2017

View article titled, Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Journal Articles

Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation

Seung-Hun Lee, Taehun Kim, Jihun Lee, Christophe Avis, Jin Jang

Appl. Phys. Lett. 110, 122102 (2017)

https://doi.org/10.1063/1.4978932

Published: March 2017

View article titled, Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation

Includes: Supplementary data

Journal Articles

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Minkyu Chun, Jae Gwang Um, Min Sang Park, Md Delwar Hossain Chowdhury, Jin Jang

AIP Advances 6, 075217 (2016)

https://doi.org/10.1063/1.4960014

Published: July 2016

View article titled, Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Journal Articles

High performance p-type NiO_x thin-film transistor by Sn doping

Tengda Lin, Xiuling Li, Jin Jang

Appl. Phys. Lett. 108, 233503 (2016)

https://doi.org/10.1063/1.4953222

Published: June 2016

View article titled, High performance p-type NiOx thin-film transistor by Sn doping

Journal Articles

Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

Eunji Lee, Md Delwar Hossain Chowdhury, Min Sang Park, Jin Jang

Appl. Phys. Lett. 107, 233509 (2015)

https://doi.org/10.1063/1.4937441

Published: December 2015

View article titled, Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

Journal Articles

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Jae Gwang Um, Mallory Mativenga, Piero Migliorato, Jin Jang

J. Appl. Phys. 117, 234502 (2015)

https://doi.org/10.1063/1.4922714

Published: June 2015

View article titled, Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Journal Articles

Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

Zhiwei Zong, Ling Li, Jin Jang, Nianduan Lu, Ming Liu

J. Appl. Phys. 117, 215705 (2015)

https://doi.org/10.1063/1.4922181

Published: June 2015

View article titled, Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

Journal Articles

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

Minkyu Chun, Md Delwar Hossain Chowdhury, Jin Jang

AIP Advances 5, 057165 (2015)

https://doi.org/10.1063/1.4922005

Published: May 2015

View article titled, Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

Journal Articles

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Chan-Yong Jeong, Daeun Lee, Sang-Hun Song, Jong In Kim, Jong-Ho Lee, Jae-Gwang Um, Jin Jang, Hyuck-In Kwon

J. Vac. Sci. Technol. B 33, 030603 (2015)

https://doi.org/10.1116/1.4919234

Published: April 2015

View article titled, Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Journal Articles

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Md Delwar Hossain Chowdhury, Jae Gwang Um, Jin Jang

Appl. Phys. Lett. 105, 233504 (2014)

https://doi.org/10.1063/1.4903874

Published: December 2014

View article titled, Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Journal Articles

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y₂O₃ passivation

Sungjin An, Mallory Mativenga, Youngoo Kim, Jin Jang

Appl. Phys. Lett. 105, 053507 (2014)

https://doi.org/10.1063/1.4892541

Published: August 2014

View article titled, Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

Journal Articles

Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Jae Gwang Um, Mallory Mativenga, Piero Migliorato, Jin Jang

J. Appl. Phys. 115, 134502 (2014)

https://doi.org/10.1063/1.4870458

Published: April 2014

View article titled, Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Journal Articles

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Ho-young Jeong, Bok-young Lee, Young-jang Lee, Jung-il Lee, Myoung-su Yang, In-byeong Kang, Mallory Mativenga, Jin Jang

Appl. Phys. Lett. 104, 022115 (2014)

https://doi.org/10.1063/1.4862320

Published: January 2014

View article titled, Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Journal Articles

Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Md Delwar Hossain Chowdhury, Piero Migliorato, Jin Jang

Appl. Phys. Lett. 103, 152103 (2013)

https://doi.org/10.1063/1.4824875

Published: October 2013

View article titled, Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Journal Articles

Increase of mobility in dual gate amorphous-InGaZnO₄ thin-film transistors by pseudo-doping

Si Hyung Park, Mallory Mativenga, Jin Jang

Appl. Phys. Lett. 103, 043509 (2013)

https://doi.org/10.1063/1.4816587

Published: July 2013

View article titled, Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping

Journal Articles

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Jae Gwang Um, Mallory Mativenga, Jin Jang

Appl. Phys. Lett. 103, 033501 (2013)

https://doi.org/10.1063/1.4813747

Published: July 2013

View article titled, Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

NARROW

Topics

Electrically driven on-chip transferrable micro-LEDs

High performance ferroelectric ZnO thin film transistor using AlO_x/HfZrO/ZrO_x gate insulator by spray pyrolysis

Solution processed high performance ferroelectric Hf_0.5Zr_0.5O₂ thin film transistor on glass substrate

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

Control of O-H bonds at a-IGZO/SiO₂ interface by long time thermal annealing for highly stable oxide TFT

Solution-processed gadolinium doped indium-oxide thin-film transistors with oxide passivation

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

High performance p-type NiO_x thin-film transistor by Sn doping

Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

Properties of bottom and top channel interfaces in double-gate back-channel-etched amorphous indium-gallium-zinc oxide thin-film transistors

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y₂O₃ passivation

Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Increase of mobility in dual gate amorphous-InGaZnO₄ thin-film transistors by pseudo-doping

Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

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