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Journal Articles

Defect-engineered electrical and optoelectronic properties of WS₂ irradiated with 10 MeV protons

Donggyu Lee, Seung Jae Kwak, Joonyup Bae, Won Bo Lee, Jihyun Kim

Appl. Phys. Lett. 126, 011903 (2025)

https://doi.org/10.1063/5.0248810

Published: January 2025

View article titled, Defect-engineered electrical and optoelectronic properties of WS2 irradiated with 10 MeV protons

Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton

J. Vac. Sci. Technol. B 42, 052206 (2024)

https://doi.org/10.1116/6.0003818

Published: August 2024

View article titled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Journal Articles

Type II band alignment of NiO/α-Ga₂O₃ for annealing temperatures up to 600 °C

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Eitan Hershkovitz, Fan Ren, Honggyu Kim, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, S. J. Pearton

J. Vac. Sci. Technol. A 40, 063408 (2022)

https://doi.org/10.1116/6.0002257

Published: November 2022

View article titled, Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Journal Articles

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Huije Ryu, Hyunik Park, Joung-Hun Kim, Fan Ren, Jihyun Kim, Gwan-Hyoung Lee, Stephen J. Pearton

Appl. Phys. Rev. 9, 031305 (2022)

https://doi.org/10.1063/5.0090373

Published: September 2022

View article titled, Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Journal Articles

H trapping at the metastable cation vacancy in α -Ga₂O₃ and α -Al₂O₃

Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, Stephen J. Pearton

Appl. Phys. Lett. 120, 192101 (2022)

https://doi.org/10.1063/5.0094707

Published: May 2022

View article titled, H trapping at the metastable cation vacancy in α -Ga2O3 and α -Al2O3

Journal Articles

Atomic layer etching of Al₂O₃ with NF₃ plasma fluorination and trimethylaluminum ligand exchange

Jihyun Kim, Dahee Shim, Yongjae Kim, Heeyeop Chae

J. Vac. Sci. Technol. A 40, 032603 (2022)

https://doi.org/10.1116/6.0001616

Published: April 2022

View article titled, Atomic layer etching of Al2O3 with NF3 plasma fluorination and trimethylaluminum ligand exchange

Journal Articles

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Alexander Y. Polyakov, Vladimir I. Nikolaev, Eugene B. Yakimov, Fan Ren, Stephen J. Pearton, Jihyun Kim

J. Vac. Sci. Technol. A 40, 020804 (2022)

https://doi.org/10.1116/6.0001701

Published: February 2022

View article titled, Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Journal Articles

Plasma atomic layer etching for titanium nitride at low temperatures

Dahee Shim, Jihyun Kim, Yongjae Kim, Heeyeop Chae

J. Vac. Sci. Technol. B 40, 022208 (2022)

https://doi.org/10.1116/6.0001602

Published: February 2022

View article titled, Plasma atomic layer etching for titanium nitride at low temperatures

Journal Articles

Capacitance–voltage characteristics of Pt/hBN/WSe₂ metal–insulator–semiconductor capacitor doped by charge-transfer process

HoHyun Im, Geonyeop Lee, Hyunik Park, Dongryul Lee, Jihyun Kim

Appl. Phys. Lett. 120, 023102 (2022)

https://doi.org/10.1063/5.0075162

Published: January 2022

View article titled, Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

Includes: Supplementary data

Journal Articles

1 GeV proton damage in β-Ga₂O₃

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton

J. Appl. Phys. 130, 185701 (2021)

https://doi.org/10.1063/5.0068306

Published: November 2021

View article titled, 1 GeV proton damage in β-Ga2O3

Includes: Supplementary data

Journal Articles

Self-powered solar-blind α-Ga₂O₃ thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Jinho Bae, Ji-Hyeon Park, Dae-Woo Jeon, Jihyun Kim

APL Mater. 9, 101108 (2021)

https://doi.org/10.1063/5.0067133

Published: October 2021

View article titled, Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Includes: Supplementary data

Journal Articles

Capacitive β-Ga₂O₃ solar-blind photodetector with graphene electrode

Ayeong Kim, Geonyeop Lee, Jihyun Kim

J. Vac. Sci. Technol. A 39, 053412 (2021)

https://doi.org/10.1116/6.0001217

Published: August 2021

View article titled, Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode

Includes: Supplementary data

Journal Articles

Magneto-optical properties of Cr³⁺ in β-Ga₂O₃

Jan E. Stehr, Mattias Jansson, Detlev M. Hofmann, Jihyun Kim, Stephen J. Pearton, Weimin M. Chen, Irina A. Buyanova

Appl. Phys. Lett. 119, 052101 (2021)

https://doi.org/10.1063/5.0060628

Published: August 2021

View article titled, Magneto-optical properties of Cr3+ in β-Ga2O3

Journal Articles

Electrical properties and deep trap spectra in Ga₂O₃ films grown by halide vapor phase epitaxy on p-type diamond substrates

Alexander Y. Polyakov, Vladimir I. Nikolaev, Sergey A. Tarelkin, Alexei I. Pechnikov, Sergey I. Stepanov, Andrey E. Nikolaev, Ivan V. Shchemerov, Eugene B. Yakimov, Nikolay V. Luparev, Mikhail S. Kuznetsov, Anton A. Vasilev, Anastasiya I. Kochkova, Marina I. Voronova, Mikhail P. Scheglov, Jihyun Kim, Stephen J. Pearton

J. Appl. Phys. 129, 185701 (2021)

https://doi.org/10.1063/5.0044531

Published: May 2021

View article titled, Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

Journal Articles

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

Jinho Bae, Dae-Woo Jeon, Ji-Hyeon Park, Jihyun Kim

J. Vac. Sci. Technol. A 39, 033410 (2021)

https://doi.org/10.1116/6.0000940

Published: April 2021

View article titled, High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3

Journal Articles

Large-scale synthesis of atomically thin ultrawide bandgap β-Ga₂O₃ using a liquid gallium squeezing technique

Hyunik Park, Yongha Choi, Sujung Yang, Jinho Bae, Jihyun Kim

J. Vac. Sci. Technol. A 39, 033409 (2021)

https://doi.org/10.1116/6.0000927

Published: March 2021

View article titled, Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique

Includes: Supplementary data

Journal Articles

Design of Ga₂O₃ modulation doped field effect transistors

Michael A. Mastro, Marko J. Tadjer, Jihyun Kim, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 023412 (2021)

https://doi.org/10.1116/6.0000825

Published: February 2021

View article titled, Design of Ga2O3 modulation doped field effect transistors

Includes: Supplementary data

Journal Articles

Highly selective ozone-treated β -Ga₂O₃ solar-blind deep-UV photodetectors

Suhyun Kim, Jihyun Kim

Appl. Phys. Lett. 117, 261101 (2020)

https://doi.org/10.1063/5.0030400

Published: December 2020

View article titled, Highly selective ozone-treated β -Ga2O3 solar-blind deep-UV photodetectors

Includes: Supplementary data

Journal Articles

Assessment of the (010) β-Ga₂O₃ surface and substrate specification

Michael A. Mastro, Charles R. Eddy, Jr., Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 013408 (2021)

https://doi.org/10.1116/6.0000725

Published: December 2020

View article titled, Assessment of the (010) β-Ga2O3 surface and substrate specification

Journal Articles

Surface chemistry and electrochemistry of an ionic liquid and lithium on Li₄Ti₅O₁₂(111)—A model study of the anode|electrolyte interface

Jihyun Kim, Isabella Weber, Florian Buchner, Johannes Schnaidt, R. Jürgen Behm

J. Chem. Phys. 151, 134704 (2019)

https://doi.org/10.1063/1.5119765

Published: October 2019

View article titled, Surface chemistry and electrochemistry of an ionic liquid and lithium on Li4Ti5O12(111)—A model study of the anode|electrolyte interface

Includes: Supplementary data

NARROW

Topics

Defect-engineered electrical and optoelectronic properties of WS₂ irradiated with 10 MeV protons

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Type II band alignment of NiO/α-Ga₂O₃ for annealing temperatures up to 600 °C

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

H trapping at the metastable cation vacancy in α -Ga₂O₃ and α -Al₂O₃

Atomic layer etching of Al₂O₃ with NF₃ plasma fluorination and trimethylaluminum ligand exchange

Deep level defect states in β-, α-, and ɛ-Ga₂O₃ crystals and films: Impact on device performance

Plasma atomic layer etching for titanium nitride at low temperatures

Capacitance–voltage characteristics of Pt/hBN/WSe₂ metal–insulator–semiconductor capacitor doped by charge-transfer process

1 GeV proton damage in β-Ga₂O₃

Self-powered solar-blind α-Ga₂O₃ thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Capacitive β-Ga₂O₃ solar-blind photodetector with graphene electrode

Magneto-optical properties of Cr³⁺ in β-Ga₂O₃

Electrical properties and deep trap spectra in Ga₂O₃ films grown by halide vapor phase epitaxy on p-type diamond substrates

High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga₂O₃

Large-scale synthesis of atomically thin ultrawide bandgap β-Ga₂O₃ using a liquid gallium squeezing technique

Design of Ga₂O₃ modulation doped field effect transistors

Highly selective ozone-treated β -Ga₂O₃ solar-blind deep-UV photodetectors

Assessment of the (010) β-Ga₂O₃ surface and substrate specification

Surface chemistry and electrochemistry of an ionic liquid and lithium on Li₄Ti₅O₁₂(111)—A model study of the anode|electrolyte interface

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