1-2 of 2
Jianguo Lv
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing

Gang He, Jiwen Zhang, Zhaoqi Sun, Jianguo Lv, Hanshuang Chen, Mao Liu
Journal: AIP Advances
AIP Advances 6, 025003 (2016)
https://doi.org/10.1063/1.4941698
Published: February 2016
View article titled, Evolution of interface chemistry and dielectric properties of HfO<sub>2</sub>/Ge gate stack modulated by Gd incorporation and thermal annealing
Open the PDF for Evolution of interface chemistry and dielectric properties of HfO<sub>2</sub>/Ge gate stack modulated by Gd incorporation and thermal annealing in another window
Journal Articles

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Gang He, Bin Deng, Hanshuang Chen, Xiaoshuang Chen, Jianguo Lv, Yongqing Ma, Zhaoqi Sun
Journal: APL Materials
APL Mater. 1, 012104 (2013)
https://doi.org/10.1063/1.4808243
Published: June 2013
View article titled, Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks
Open the PDF for Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks in another window
Includes: Supplementary data