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Journal Articles

High temperature operation and failure of Ga₂O₃ Schottky barrier diodes: An in situ TEM study

Nahid Sultan Al-Mamun, Jian-Sian Li, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton

APL Electronic Devices 1, 016103 (2025)

https://doi.org/10.1063/5.0250729

Published: March 2025

View articletitled, High temperature operation and failure of Ga2O3 Schottky barrier diodes: An in situ TEM study

Journal Articles

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Stephen J. Pearton

Appl. Phys. Lett. 126, 043501 (2025)

https://doi.org/10.1063/5.0245530

Published: January 2025

View articletitled, kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Journal Articles

Perspective on breakdown in Ga₂O₃ vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 018501 (2025)

https://doi.org/10.1116/6.0004146

Published: December 2024

View articletitled, Perspective on breakdown in Ga2O3 vertical rectifiers

Journal Articles

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 43, 012701 (2025)

https://doi.org/10.1116/6.0004141

Published: December 2024

View articletitled, kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Journal Articles

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich

AIP Advances 14, 115301 (2024)

https://doi.org/10.1063/5.0238027

Published: November 2024

View articletitled, EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Journal Articles

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Madani Labed, Jang Hyeok Park, You Seung Rim, Fan Ren, Stephen J. Pearton

AIP Advances 14, 105326 (2024)

https://doi.org/10.1063/5.0233627

Published: October 2024

View articletitled, Cryogenic temperature operation of NiO/Ga2O3 heterojunction and Ni/Au Schottky rectifiers

Journal Articles

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

AIP Advances 14, 095201 (2024)

https://doi.org/10.1063/5.0227210

Published: September 2024

View articletitled, Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton

J. Vac. Sci. Technol. B 42, 052206 (2024)

https://doi.org/10.1116/6.0003818

Published: August 2024

View articletitled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Journal Articles

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Sergei P. Stepanoff, Fan Ren, Aman Haque, Douglas Wolfe, S. J. Pearton

J. Vac. Sci. Technol. B 42, 052203 (2024)

https://doi.org/10.1116/6.0003819

Published: August 2024

View articletitled, Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Journal Articles

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Arie Ruzin

AIP Advances 14, 085103 (2024)

https://doi.org/10.1063/5.0220201

Published: August 2024

View articletitled, Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Journal Articles

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 053204 (2024)

https://doi.org/10.1116/6.0003839

Published: August 2024

View articletitled, Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Journal Articles

Dry and wet etching of single-crystal AlN

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 052601 (2024)

https://doi.org/10.1116/6.0003744

Published: July 2024

View articletitled, Dry and wet etching of single-crystal AlN

Journal Articles

Determination of band offsets at the interfaces of NiO, SiO₂, Al₂O₃, and ITO with AlN

Hsiao-Hsuan Wan, Jian-Sian Li, Chiao-Ching Chiang, Xinyi Xia, David C. Hays, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton

J. Appl. Phys. 135, 235301 (2024)

https://doi.org/10.1063/5.0214291

Published: June 2024

View articletitled, Determination of band offsets at the interfaces of NiO, SiO2, Al2O3, and ITO with AlN

Journal Articles

Selective and nonselective plasma etching of (Al_0.18Ga_0.82)₂O₃/ Ga₂O₃ heterostructures

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Stephen J. Pearton

J. Vac. Sci. Technol. A 42, 022603 (2024)

https://doi.org/10.1116/6.0003400

Published: February 2024

View articletitled, Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures

Journal Articles

High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Dan Neal, Josephine F. Esquivel-Upshaw, Stephen J. Pearton

J. Vac. Sci. Technol. B 42, 023202 (2024)

https://doi.org/10.1116/6.0003370

Published: February 2024

View articletitled, High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

Journal Articles

E-mode AlGaN/GaN HEMTs using p-NiO gates

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton

J. Vac. Sci. Technol. B 41, 062205 (2023)

https://doi.org/10.1116/6.0003119

Published: November 2023

View articletitled, E-mode AlGaN/GaN HEMTs using p-NiO gates

Journal Articles

β-Ga₂O₃ orientation dependence of band offsets with SiO₂ and Al₂O₃

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 063205 (2023)

https://doi.org/10.1116/6.0003039

Published: September 2023

View articletitled, β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3

Journal Articles

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton

J. Vac. Sci. Technol. A 41, 052707 (2023)

https://doi.org/10.1116/6.0002884

Published: August 2023

View articletitled, Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga₂O₃ rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 41, 043404 (2023)

https://doi.org/10.1116/6.0002722

Published: June 2023

View articletitled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Journal Articles

7.5 kV, 6.2 GW cm⁻² NiO/β-Ga₂O₃ vertical rectifiers with on–off ratio greater than 10¹³

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

J. Vac. Sci. Technol. A 41, 030401 (2023)

https://doi.org/10.1116/6.0002580

Published: April 2023

View articletitled, 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

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High temperature operation and failure of Ga₂O₃ Schottky barrier diodes: An in situ TEM study

kV-class vertical p-n heterojunction rectifier based on ITO/diamond

Perspective on breakdown in Ga₂O₃ vertical rectifiers

kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers

Achievement of low turn-on voltage in Ga₂O₃ Schottky and heterojunction hybrid rectifiers using W/Au anode contact

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Switching of kV-class Ga₂O₃ heterojunction vertical rectifiers

Dry and wet etching of single-crystal AlN

Determination of band offsets at the interfaces of NiO, SiO₂, Al₂O₃, and ITO with AlN

Selective and nonselective plasma etching of (Al_0.18Ga_0.82)₂O₃/ Ga₂O₃ heterostructures

High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

E-mode AlGaN/GaN HEMTs using p-NiO gates

β-Ga₂O₃ orientation dependence of band offsets with SiO₂ and Al₂O₃

Vertical NiO/β-Ga₂O₃ rectifiers grown by metalorganic chemical vapor deposition

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga₂O₃ rectifiers

7.5 kV, 6.2 GW cm⁻² NiO/β-Ga₂O₃ vertical rectifiers with on–off ratio greater than 10¹³

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