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Journal Articles

Spatially resolved degradation effects in UVB LEDs stressed by constant current operation

Jan Ruschel, Jens W. Tomm, Johannes Glaab, Tim Kolbe, Arne Knauer, Jens Rass, Neysha Lobo-Ploch, Tamukanashe A. Musengezi, Sven Einfeldt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 131103 (2023)
https://doi.org/10.1063/5.0141530
Published: March 2023
View article titled, Spatially resolved degradation effects in UVB LEDs stressed by constant current operation
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Journal Articles

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

Editor’s Pick
Jan Ruschel, Johannes Glaab, Felix Mahler, Tim Kolbe, Sven Einfeldt, Jens W. Tomm
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 121104 (2020)
https://doi.org/10.1063/5.0018751
Published: September 2020
View article titled, <em>In-situ</em> spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation
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Includes: Supplementary data
Journal Articles

Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

Feng Mao, Jin Hong, Han Wang, Ye Chen, Chengbin Jing, Pingxiong Yang, Jens W. Tomm, Junhao Chu, Fangyu Yue
Journal: AIP Advances
AIP Advances 10, 055311 (2020)
https://doi.org/10.1063/1.5143802
Published: May 2020
View article titled, Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes
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Journal Articles

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Felix Mahler, Jens W. Tomm, Klaus Reimann, Michael Woerner, Veit Hoffmann, Carsten Netzel, Markus Weyers, Thomas Elsaesser
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 185705 (2019)
https://doi.org/10.1063/1.5078668
Published: May 2019
View article titled, Time-resolved photoluminescence from <em>n</em>-doped GaN/Al<sub>0.18</sub>Ga<sub>0.82</sub>N short-period superlattices probes carrier kinetics and long-term structural stability
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Includes: Supplementary data
Journal Articles

Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots

Fangyu Yue, Jens W. Tomm, Detlef Kruschke, Bruno Ullrich, Junhao Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 022106 (2015)
https://doi.org/10.1063/1.4926806
Published: July 2015
View article titled, Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots
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Journal Articles

Ex post manipulation of barriers in InGaAs tunnel injection devices

Vadim G. Talalaev, George E. Cirlin, Boris V. Novikov, Bodo Fuhrmann, Peter Werner, Jens W. Tomm
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 013104 (2015)
https://doi.org/10.1063/1.4905467
Published: January 2015
View article titled, <em>Ex post</em> manipulation of barriers in InGaAs tunnel injection devices
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Journal Articles

Photoluminescence lineshape of ZnO

Bruno Ullrich, Akhilesh K. Singh, Mithun Bhowmick, Puspendu Barik, David Ariza-Flores, Haowen Xi, Jens W. Tomm
Journal: AIP Advances
AIP Advances 4, 123001 (2014)
https://doi.org/10.1063/1.4897383
Published: October 2014
View article titled, Photoluminescence lineshape of ZnO
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Journal Articles

Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination

Kay-Michael Guenther, Thomas Gimpel, Jens W. Tomm, Stefan Winter, Augustinas Ruibys, Stefan Kontermann, Wolfgang Schade
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 042107 (2014)
https://doi.org/10.1063/1.4863439
Published: January 2014
View article titled, Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination
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Journal Articles

Surface InP/In0.48Ga0.52P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes

Karine Hestroffer, Robert Braun, Asli Ugur, Jens W. Tomm, Steffen Hackbarth, Beate Röder, Fariba Hatami
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 163510 (2013)
https://doi.org/10.1063/1.4827188
Published: October 2013
View article titled, Surface InP/In<sub>0.48</sub>Ga<sub>0.52</sub>P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes
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Journal Articles

How does external feedback cause AlGaAs-based diode lasers to degrade?

Martin Hempel, Mingjun Chi, Paul M. Petersen, Ute Zeimer, Jens W. Tomm
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 023502 (2013)
https://doi.org/10.1063/1.4775681
Published: January 2013
View article titled, How does external feedback cause AlGaAs-based diode lasers to degrade?
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Journal Articles

High single-spatial-mode pulsed power from 980 nm emitting diode lasers

Martin Hempel, Jens W. Tomm, Thomas Elsaesser, Mauro Bettiati
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 191105 (2012)
https://doi.org/10.1063/1.4766267
Published: November 2012
View article titled, High single-spatial-mode pulsed power from 980 nm emitting diode lasers
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Journal Articles

Near-field dynamics of broad area diode laser at very high pump levels

Martin Hempel, Jens W. Tomm, Martina Baeumler, Helmer Konstanzer, Jayanta Mukherjee, Thomas Elsaesser
Journal: AIP Advances
AIP Advances 1, 042148 (2011)
https://doi.org/10.1063/1.3664745
Published: November 2011
View article titled, Near-field dynamics of broad area diode laser at very high pump levels
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Journal Articles

Catastrophic optical damage at front and rear facets of diode lasers

Martin Hempel, Jens W. Tomm, Mathias Ziegler, Thomas Elsaesser, Nicolas Michel, Michel Krakowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 231101 (2010)
https://doi.org/10.1063/1.3524235
Published: December 2010
View article titled, Catastrophic optical damage at front and rear facets of diode lasers
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Journal Articles

Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

Mathias Ziegler, Martin Hempel, Henning E. Larsen, Jens W. Tomm, Peter E. Andersen, Sønnik Clausen, Stella N. Elliott, Thomas Elsaesser
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 021110 (2010)
https://doi.org/10.1063/1.3463039
Published: July 2010
View article titled, Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
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Journal Articles

Extrinsic contributions to photocurrents from quantum-wells

Rakshyakar Giri, Sandy Schwirzke-Schaaf, Jens W. Tomm
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 013103 (2010)
https://doi.org/10.1063/1.3457148
Published: July 2010
View article titled, Extrinsic contributions to photocurrents from quantum-wells
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Journal Articles

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Stella N. Elliott, Peter M. Smowton, Mathias Ziegler, Jens W. Tomm, Ute Zeimer
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 123116 (2010)
https://doi.org/10.1063/1.3437395
Published: June 2010
View article titled, Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes
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Journal Articles

Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers

Martin Hempel, Mathias Ziegler, Jens W. Tomm, Thomas Elsaesser, Nicolas Michel, Michel Krakowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 251105 (2010)
https://doi.org/10.1063/1.3456388
Published: June 2010
View article titled, Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers
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Journal Articles

Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation

Mathias Ziegler, Jens W. Tomm, David Reeber, Thomas Elsaesser, Ute Zeimer, Henning E. Larsen, Paul M. Petersen, Peter E. Andersen
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 191101 (2009)
https://doi.org/10.1063/1.3133339
Published: May 2009
View article titled, Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation
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Journal Articles

Microthermography of diode lasers: The impact of light propagation on image formation

Julien LeClech, Mathias Ziegler, Jayanta Mukherjee, Jens W. Tomm, Thomas Elsaesser, Jean-Pierre Landesman, Brian Corbett, John G. Mclnerney, Johann Peter Reithmaier, Stefan Deubert, Alfred Forchel, Włodzimierz Nakwaski, Robert P. Sarzała
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 014502 (2009)
https://doi.org/10.1063/1.3055356
Published: January 2009
View article titled, Microthermography of diode lasers: The impact of light propagation on image formation
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Journal Articles

Infrared emission from the substrate of GaAs-based semiconductor lasers

Mathias Ziegler, Robert Pomraenke, Max Felger, Jens W. Tomm, Parinda Vasa, Christoph Lienau, Marwan Bou Sanayeh, Alvaro Gomez-Iglesias, Martin Reufer, Frank Bugge, Götz Erbert
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 041101 (2008)
https://doi.org/10.1063/1.2959854
Published: July 2008
View article titled, Infrared emission from the substrate of GaAs-based semiconductor lasers
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