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Journal Articles

Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy

Muzafar Ahmad Rather, Shao-Hsiang Hsu, Chih-Chieh Lin, Yen-Huang Tien, Chien-Ting Wu, Tung-Yuan Yu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 195301 (2024)
https://doi.org/10.1063/5.0230671
Published: November 2024
View article titled, Scalable approach for growing hexagonal boron nitride on silicon and its role in III-nitride van der Waals epitaxy
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Journal Articles

Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics

Arnab Mondal, Manoj K. Yadav, Arpit Nandi, Shiv Kumar, Indraneel Sanyal, Satinder K. Sharma, Jen-Inn Chyi, Ankush Bag
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 023506 (2024)
https://doi.org/10.1063/5.0215146
Published: July 2024
View article titled, Pinch-off driven near-ideal output characteristics of n-Ga<sub>2</sub>O<sub>3</sub>/p-GaN light effect transistor for UV photonics
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Journal Articles

Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

Zon, Tzu-Wei Lo, Zhen-Lun Li, Samatcha Vorathamrong, Chao-Chia Cheng, Chun-Nien Liu, Chun-Te Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 032709 (2024)
https://doi.org/10.1116/6.0003501
Published: April 2024
View article titled, Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
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Journal Articles

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Zon, Samatcha Voranthamrong, Chao-Chia Cheng, Tzu-Wei Lo, Zhen-Lun Li, Chun-Nien Liu, Chun-De Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 044301 (2024)
https://doi.org/10.1063/5.0186031
Published: January 2024
View article titled, The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates
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Journal Articles

Evidence of charged interface states limited scattering in GaN heterostructures

Indraneel Sanyal, Yu-Chih Chen, Chuan-Yue Yu, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 085702 (2023)
https://doi.org/10.1063/5.0159380
Published: August 2023
View article titled, Evidence of charged interface states limited scattering in GaN heterostructures
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Journal Articles

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Muzafar Ahmad Rather, Loganathan Ravi, Tung-Yuan Yu, Chien-Ting Wu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 012101 (2023)
https://doi.org/10.1063/5.0116951
Published: July 2023
View article titled, An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions
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Journal Articles

Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure

Wei-Sheng Liu, Ting-Kai Yang, Wei-Jen Hsueh, Jen-Inn Chyi, Tien-Yuan Huang, Ming-En Hsu
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 093103 (2019)
https://doi.org/10.1063/1.5097879
Published: August 2019
View article titled, Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure
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Journal Articles

Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties

Indraneel Sanyal, Yen-Chang Lee, Yu-Chih Chen, Jen-Inn Chyi
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 222103 (2019)
https://doi.org/10.1063/1.5090874
Published: June 2019
View article titled, Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties
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Journal Articles

Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

Abiral Regmi, Indu Sarangadharan, Yen-Wen Chen, Chen-Pin Hsu, Geng-Yen Lee, Jen-Inn Chyi, Shu-Chu Shiesh, Gwo-Bin Lee, Yu-Lin Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 082106 (2017)
https://doi.org/10.1063/1.5000247
Published: August 2017
View article titled, Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors
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Journal Articles

Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition

Wei-Jen Hsueh, Cheng-Yu Chen, Chao-Min Chang, Jen-Inn Chyi, Mao-Lin Huang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 01B106 (2017)
https://doi.org/10.1116/1.4967233
Published: November 2016
View article titled, Effects of GaSb surface preparation on the characteristics of HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition
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Journal Articles

Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer

Pei-Chin Chiu, Wei-Jen Hsueh, Nien-Tze Yeh, Chao-Ching Cheng, You-Ru Lin, Chih-Hsin Ko, Clement H. Wann, Jen-Inn Chyi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 061207 (2013)
https://doi.org/10.1116/1.4827266
Published: October 2013
View article titled, Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer
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Journal Articles

Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

Yu-An Liao, Yi-Kai Chao, Shu-Wei Chang, Wen-Hao Chang, Jen-Inn Chyi, Shih-Yen Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 143502 (2013)
https://doi.org/10.1063/1.4824067
Published: October 2013
View article titled, Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
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Journal Articles

Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models

Yen-Wen Kang, Geng-Yen Lee, Jen-Inn Chyi, Chen-Pin Hsu, You-Ren Hsu, Chia-Hsien Hsu, Yu-Fen Huang, Yuh-Chang Sun, Chih-Chen Chen, Sheng Chun Hung, Fan Ren, J. Andrew Yeh, Yu-Lin Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173704 (2013)
https://doi.org/10.1063/1.4803916
Published: May 2013
View article titled, Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
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Includes: Supplementary data
Journal Articles

Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer

Yu-An Liao, Wei-Ting Hsu, Shih-Han Huang, Pei-Chin Chiu, Jen-Inn Chyi, Wen-Hao Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 173104 (2013)
https://doi.org/10.1063/1.4803013
Published: April 2013
View article titled, Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
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Journal Articles

Temperature-dependent decay dynamics in highly mismatched ZnSe1−xTex alloy

Yan-Cheng Lin, Wei-Shi Jiang, Wu-Ching Chou, Wei-Kuo Chen, Wen-Hao Chang, Chin-Hau Chia, Cheng-Yu Chen, Jen-Inn Chyi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 071912 (2012)
https://doi.org/10.1063/1.3687187
Published: February 2012
View article titled, Temperature-dependent decay dynamics in highly mismatched ZnSe<sub>1−</sub><sub><em>x</em></sub>Te<sub><em>x</em></sub> alloy
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Journal Articles

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

Wei-Ting Hsu, Yu-An Liao, Feng-Chang Hsu, Pei-Chin Chiu, Jen-Inn Chyi, Wen-Hao Chang
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 073108 (2011)
https://doi.org/10.1063/1.3624464
Published: August 2011
View article titled, Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
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Journal Articles

Spectroscopic ellipsometric analysis of ZnSe 1 − x O x layers with different O compositions

Kasimayan Uma, Cheng-Yu Chen, Chih-Kang Chao, Chih-Hung Wu, Jen-Inn Chyi
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 103113 (2010)
https://doi.org/10.1063/1.3511439
Published: November 2010
View article titled, Spectroscopic ellipsometric analysis of ZnSe 1 − x O x layers with different O compositions
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Journal Articles

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Shih-Yen Lin, Chi-Che Tseng, Wei-Hsun Lin, Shu-Cheng Mai, Shung-Yi Wu, Shu-Han Chen, Jen-Inn Chyi
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 123503 (2010)
https://doi.org/10.1063/1.3371803
Published: March 2010
View article titled, Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
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Journal Articles

Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H.-Y. Kim, J. Kim, Shu-Han Chen, Sheng-Yu Wang, Jen-Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, L33–L37 (2009)
https://doi.org/10.1116/1.3246405
Published: October 2009
View article titled, Proton irradiation effects on Sb-based heterojunction bipolar transistors
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Journal Articles

Electrically manipulating the optical sensitivity function in quantum wells for nanoacoustic wave detection

Pei-Hsun Wang, Yu-Chieh Wen, Shi-Hao Guol, Chih-Ming Lai, Hung-Cheng Lin, Peng-Ren Chen, Jin-Wei Shi, Jen-Inn Chyi, Chi-Kuang Sun
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 143108 (2009)
https://doi.org/10.1063/1.3243988
Published: October 2009
View article titled, Electrically manipulating the optical sensitivity function in quantum wells for nanoacoustic wave detection
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