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Jean-François Carlin
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Journal Articles

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi, Paul M. Walker, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Dmitry V. Skryabin, Jean-François Carlin, Nicolas Grandjean, Raphaël Butté
Journal: APL Photonics
APL Photonics 8, 021302 (2023)
https://doi.org/10.1063/5.0132170
Published: February 2023
View article titled, Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
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Includes: Supplementary data
Journal Articles

GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface

Yao Chen, Camille Haller, Wei Liu, Sergey Yu Karpov, Jean-François Carlin, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 111102 (2021)
https://doi.org/10.1063/5.0040326
Published: March 2021
View article titled, GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
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Includes: Supplementary data
Journal Articles

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Editor’s Pick
Ian Rousseau, Gordon Callsen, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 113103 (2018)
https://doi.org/10.1063/1.5022150
Published: March 2018
View article titled, Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
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Includes: Supplementary data
Journal Articles

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Raphaël Butté, Lise Lahourcade, Tomas Kristijonas Uždavinys, Gordon Callsen, Mounir Mensi, Marlene Glauser, Georg Rossbach, Denis Martin, Jean-François Carlin, Saulius Marcinkevičius, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 032106 (2018)
https://doi.org/10.1063/1.5010879
Published: January 2018
View article titled, Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
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Includes: Supplementary data
Journal Articles

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Mohamed Sabry Mohamed, Angelica Simbula, Jean-François Carlin, Momchil Minkov, Dario Gerace, Vincenzo Savona, Nicolas Grandjean, Matteo Galli, Romuald Houdré
Journal: APL Photonics
APL Photonics 2, 031301 (2017)
https://doi.org/10.1063/1.4974311
Published: January 2017
View article titled, Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon
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Includes: Supplementary data
Journal Articles

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Gediminas Liaugaudas, Gwénolé Jacopin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 205708 (2016)
https://doi.org/10.1063/1.4951711
Published: May 2016
View article titled, Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells
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Journal Articles

Far-field coupling in nanobeam photonic crystal cavities

Ian Rousseau, Irene Sánchez-Arribas, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 201104 (2016)
https://doi.org/10.1063/1.4949359
Published: May 2016
View article titled, Far-field coupling in nanobeam photonic crystal cavities
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Journal Articles

Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Noelia Vico Triviño, Momchil Minkov, Giulia Urbinati, Matteo Galli, Jean-François Carlin, Raphaël Butté, Vincenzo Savona, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 231119 (2014)
https://doi.org/10.1063/1.4903861
Published: December 2014
View article titled, Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
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Journal Articles

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Gordon Schmidt, Marcus Müller, Peter Veit, Frank Bertram, Jürgen Christen, Marlene Glauser, Jean-François Carlin, Gatien Cosendey, Raphaël Butté, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 032101 (2014)
https://doi.org/10.1063/1.4890670
Published: July 2014
View article titled, Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
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Journal Articles

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Marlene Glauser, Christian Mounir, Georg Rossbach, Eric Feltin, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 233511 (2014)
https://doi.org/10.1063/1.4883958
Published: June 2014
View article titled, InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
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Journal Articles

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Lorenzo Lugani, Jean-François Carlin, Marcel A. Py, Denis Martin, Francesca Rossi, Giancarlo Salviati, Patrick Herfurth, Erhard Kohn, Jürgen Bläsing, Alois Krost, Nicolas Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 214503 (2013)
https://doi.org/10.1063/1.4808260
Published: June 2013
View article titled, Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
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Journal Articles

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Guillaume Perillat-Merceroz, Gatien Cosendey, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 063506 (2013)
https://doi.org/10.1063/1.4790424
Published: February 2013
View article titled, Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
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Journal Articles

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Gatien Cosendey, Antonino Castiglia, Georg Rossbach, Jean-François Carlin, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 151113 (2012)
https://doi.org/10.1063/1.4757873
Published: October 2012
View article titled, Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
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Journal Articles

Mg doping for p-type AlInN lattice-matched to GaN

Yoshitaka Taniyasu, Jean-François Carlin, Antonino Castiglia, Raphaël Butté, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082113 (2012)
https://doi.org/10.1063/1.4747524
Published: August 2012
View article titled, Mg doping for <em>p</em>-type AlInN lattice-matched to GaN
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Journal Articles

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Gatien Cosendey, Jean-François Carlin, Nils A. K. Kaufmann, Raphaël Butté, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 181111 (2011)
https://doi.org/10.1063/1.3586767
Published: May 2011
View article titled, Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
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Journal Articles

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Alexei Altoukhov, Jacques Levrat, Eric Feltin, Jean-François Carlin, Antonino Castiglia, Raphaël Butté, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 191102 (2009)
https://doi.org/10.1063/1.3259720
Published: November 2009
View article titled, High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
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Journal Articles

Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity

Gabriel Christmann, Raphaël Butté, Eric Feltin, Jean-François Carlin, Nicolas Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 051102 (2008)
https://doi.org/10.1063/1.2966369
Published: August 2008
View article titled, Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity
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Journal Articles

Modification of InGaN Quantum Well Luminescence by Microstructured Buffer Layers

Yargo C. Bonetti, Marcel Graf, Daniel Hofstetter, Jean‐Francois Carlin, Jean‐Daniel Ganiere, Nicolas Grandjean
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 445–446 (2007)
https://doi.org/10.1063/1.2729957
Published: April 2007
View article titled, Modification of InGaN Quantum Well Luminescence by Microstructured Buffer Layers
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Journal Articles

High‐speed InP/GaInAs metal‐semiconductor‐metal photodetectors grown by chemical beam epitaxy

Nacer Debbar, Alok Rudra, Jean‐François Carlin, Marc Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 228–230 (1994)
https://doi.org/10.1063/1.112637
Published: July 1994
View article titled, High‐speed InP/GaInAs metal‐semiconductor‐metal photodetectors grown by chemical beam epitaxy
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