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Journal Articles

Thermomechanical characterization and modeling for TSV structures

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Tengfei Jiang, Suk-Kyu Ryu, Qiu Zhao, Jay Im, Paul S. Ho, Rui Huang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1601, 148–157 (2014)
https://doi.org/10.1063/1.4881348
Published: June 2014
View articletitled, Thermomechanical characterization and modeling for TSV structures
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Journal Articles

Characterization of thermal stresses and plasticity in through-silicon via structures for three-dimensional integration

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Tengfei Jiang, Suk-Kyu Ryu, Jay Im, Rui Huang, Paul S. Ho
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1601, 55–66 (2014)
https://doi.org/10.1063/1.4881340
Published: June 2014
View articletitled, Characterization of thermal stresses and plasticity in through-silicon via structures for three-dimensional integration
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Journal Articles

Plasticity mechanism for copper extrusion in through-silicon vias for three-dimensional interconnects

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Tengfei Jiang, Chenglin Wu, Laura Spinella, Jay Im, Nobumichi Tamura, Martin Kunz, Ho-Young Son, Byoung Gyu Kim, Rui Huang, Paul S. Ho
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 211906 (2013)
https://doi.org/10.1063/1.4833020
Published: November 2013
View articletitled, Plasticity mechanism for copper extrusion in through-silicon vias for three-dimensional interconnects
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Journal Articles

Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects

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Suk-Kyu Ryu, Qiu Zhao, Michael Hecker, Ho-Young Son, Kwang-Yoo Byun, Jay Im, Paul S. Ho, Rui Huang
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 063513 (2012)
https://doi.org/10.1063/1.3696980
Published: March 2012
View articletitled, Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects
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Journal Articles

Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique

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Suk-Kyu Ryu, Tengfei Jiang, Kuan H. Lu, Jay Im, Ho-Young Son, Kwang-Yoo Byun, Rui Huang, Paul S. Ho
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 041901 (2012)
https://doi.org/10.1063/1.3678020
Published: January 2012
View articletitled, Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique
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Journal Articles

Stress‐Induced Delamination Of Through Silicon Via Structures

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Suk‐Kyu Ryu, Kuan‐Hsun Lu, Jay Im, Rui Huang, Paul S. Ho
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1378, 153–167 (2011)
https://doi.org/10.1063/1.3615702
Published: September 2011
View articletitled, Stress‐Induced Delamination Of Through Silicon Via Structures
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Journal Articles

Thermomechanical Reliability Challenges For 3D Interconnects With Through‐Silicon Vias

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Suk‐Kyu Ryu, Kuan‐Hsun Lu, Xuefeng Zhang, Jay Im, Paul S. Ho, Rui Huang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1300, 189–200 (2010)
https://doi.org/10.1063/1.3527126
Published: November 2010
View articletitled, Thermomechanical Reliability Challenges For 3D Interconnects With Through‐Silicon Vias
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Journal Articles

Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales

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Huai Huang, Bin Li, Qiu Zhao, Zhiquan Luo, Jay Im, Min K. Kang, Richard A. Allen, Michael W. Cresswell, Rui Huang, Paul S. Ho
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1143, 204–212 (2009)
https://doi.org/10.1063/1.3169260
Published: June 2009
View articletitled, Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales
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Journal Articles

Line Scaling Effect on Grain Structure for Cu Interconnects

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Lijuan Zhang, Jay Im, Paul S. Ho
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1143, 151–155 (2009)
https://doi.org/10.1063/1.3169254
Published: June 2009
View articletitled, Line Scaling Effect on Grain Structure for Cu Interconnects
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Journal Articles

Electromigration behavior of 60 nm dual damascene Cu interconnects

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Jung Woo Pyun, Won-Chong Baek, Lijuan Zhang, Jay Im, Paul S. Ho, Larry Smith, Gregory Smith
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 093516 (2007)
https://doi.org/10.1063/1.2805425
Published: November 2007
View articletitled, Electromigration behavior of 60 nm dual damascene Cu interconnects
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Journal Articles

Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints

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Brook Chao, Seung-Hyun Chae, Xuefeng Zhang, Kuan-Hsun Lu, Min Ding, Jay Im, Paul S. Ho
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 084909 (2006)
https://doi.org/10.1063/1.2359135
Published: October 2006
View articletitled, Electromigration enhanced intermetallic growth and void formation in Pb-free solder joints
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Journal Articles

Effect of barrier process on electromigration reliability of Cu/porous low- k interconnects

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Jung Woo Pyun, Won-Chong Baek, Jay Im, Paul S. Ho, Larry Smith, Kyle Neuman, Klaus Pfeifer
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 023532 (2006)
https://doi.org/10.1063/1.2219003
Published: July 2006
View articletitled, Effect of barrier process on electromigration reliability of Cu/porous low- k interconnects
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