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Journal Articles

On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon

Dominic C. Walter, Vladimir V. Voronkov, Robert Falster, Dennis Bredemeier, Jan Schmidt

J. Appl. Phys. 131, 165702 (2022)

https://doi.org/10.1063/5.0086307

Published: April 2022

View article titled, On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon

Journal Articles

Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al₂O₃

Boris A. Veith-Wolf, Jan Schmidt

AIP Conf. Proc. 2147, 050011 (2019)

https://doi.org/10.1063/1.5123860

Published: August 2019

View article titled, Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al2O3

Journal Articles

Implementation of full-area-deposited electron-selective TiO_x layers into silicon solar cells

Valeriya Titova, Jan Schmidt

AIP Advances 8, 125023 (2018)

https://doi.org/10.1063/1.5061924

Published: December 2018

View article titled, Implementation of full-area-deposited electron-selective TiOx layers into silicon solar cells

Journal Articles

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd₂O₃ (111)/Si (111) heterostructures

Krista R. Khiangte, Jaswant S. Rathore, Sudipta Das, Ravindra S. Pokharia, Jan Schmidt, H. J. Osten, Apurba Laha, Suddhasatta Mahapatra

J. Appl. Phys. 124, 065704 (2018)

https://doi.org/10.1063/1.5020026

Published: August 2018

View article titled, Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures

Journal Articles

Lifetime degradation in multicrystalline silicon under illumination at elevated temperature: Indications for the involvement of hydrogen

Dennis Bredemeier, Dominic C. Walter, Jan Schmidt

AIP Conf. Proc. 1999, 130001 (2018)

https://doi.org/10.1063/1.5049320

Published: August 2018

View article titled, Lifetime degradation in multicrystalline silicon under illumination at elevated temperature: Indications for the involvement of hydrogen

Journal Articles

Electron-selective atomic-layer-deposited TiO_x layers: Impact of post-deposition annealing and implementation into n-type silicon solar cells

Valeriya Titova, Dimitrij Startsev, Jan Schmidt

AIP Conf. Proc. 1999, 040022 (2018)

https://doi.org/10.1063/1.5049285

Published: August 2018

View article titled, Electron-selective atomic-layer-deposited TiOx layers: Impact of post-deposition annealing and implementation into n-type silicon solar cells

Journal Articles

Reduction of parasitic absorption in PEDOT:PSS at the rear of c-Si solar cells

Marc-Uwe Halbich, Dimitri Zielke, Ralf Gogolin, Rüdiger Sauer, Wilfried Lövenich, Jan Schmidt

AIP Conf. Proc. 1999, 040008 (2018)

https://doi.org/10.1063/1.5049271

Published: August 2018

View article titled, Reduction of parasitic absorption in PEDOT:PSS at the rear of c-Si solar cells

Journal Articles

Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Verena Steckenreiter, Dominic C. Walter, Jan Schmidt

AIP Advances 7, 035305 (2017)

https://doi.org/10.1063/1.4978266

Published: March 2017

View article titled, Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Journal Articles

Instrumentation-related uncertainty of reflectance and transmittance measurements with a two-channel spectrophotometer

Christian Peest, Carsten Schinke, Rolf Brendel, Jan Schmidt, Karsten Bothe

Rev. Sci. Instrum. 88, 015105 (2017)

https://doi.org/10.1063/1.4973633

Published: January 2017

View article titled, Instrumentation-related uncertainty of reflectance and transmittance measurements with a two-channel spectrophotometer

Journal Articles

Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature

Dennis Bredemeier, Dominic Walter, Sandra Herlufsen, Jan Schmidt

AIP Advances 6, 035119 (2016)

https://doi.org/10.1063/1.4944839

Published: March 2016

View article titled, Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature

Journal Articles

Introduction to lethal circuit transformations

Petr Fišer, Jan Schmidt

AIP Conf. Proc. 1702, 100014 (2015)

https://doi.org/10.1063/1.4938891

Published: December 2015

View article titled, Introduction to lethal circuit transformations

Journal Articles

Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Carsten Schinke, P. Christian Peest, Jan Schmidt, Rolf Brendel, Karsten Bothe, Malte R. Vogt, Ingo Kröger, Stefan Winter, Alfred Schirmacher, Siew Lim, Hieu T. Nguyen, Daniel MacDonald

AIP Advances 5, 067168 (2015)

https://doi.org/10.1063/1.4923379

Published: June 2015

View article titled, Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Includes: Supplementary data

Journal Articles

Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

Boris Veith-Wolf, Jianhui Wang, Milja Hannu-Kuure, Ning Chen, Admir Hadzic, Paul Williams, Jarkko Leivo, Ari Karkkainen, Jan Schmidt

Appl. Phys. Lett. 106, 052104 (2015)

https://doi.org/10.1063/1.4907533

Published: February 2015

View article titled, Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

Journal Articles

Manipulating the negative fixed charge density at the c-Si/Al₂O₃ interface

Florian Werner, Jan Schmidt

Appl. Phys. Lett. 104, 091604 (2014)

https://doi.org/10.1063/1.4867652

Published: March 2014

View article titled, Manipulating the negative fixed charge density at the c-Si/Al2O3 interface

Journal Articles

Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths

Carsten Schinke, Karsten Bothe, Peter Christian Peest, Jan Schmidt, Rolf Brendel

Appl. Phys. Lett. 104, 081915 (2014)

https://doi.org/10.1063/1.4866916

Published: February 2014

View article titled, Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths

Journal Articles

Aluminum-oxide-based inversion layer solar cells on n-type crystalline silicon: Fundamental properties and efficiency potential

Florian Werner, Yevgeniya Larionova, Dimitri Zielke, Tobias Ohrdes, Jan Schmidt

J. Appl. Phys. 115, 073702 (2014)

https://doi.org/10.1063/1.4865962

Published: February 2014

View article titled, Aluminum-oxide-based inversion layer solar cells on n-type crystalline silicon: Fundamental properties and efficiency potential

Journal Articles

Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability

Jan Schmidt, Valeriya Titova, Dimitri Zielke

Appl. Phys. Lett. 103, 183901 (2013)

https://doi.org/10.1063/1.4827303

Published: October 2013

View article titled, Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability

Journal Articles

Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

Fa-Jun Ma, Ganesh G. Samudra, Marius Peters, Armin G. Aberle, Florian Werner, Jan Schmidt, Bram Hoex

J. Appl. Phys. 112, 054508 (2012)

https://doi.org/10.1063/1.4749572

Published: September 2012

View article titled, Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

Journal Articles

Influence of the magnetic field on the plasmonic properties of transparent Ni anti-dot arrays

Emil Melander, Erik Östman, Janine Keller, Jan Schmidt, Evangelos Th. Papaioannou, Vassilios Kapaklis, Unnar B. Arnalds, B. Caballero, A. García-Martín, J. C. Cuevas, Björgvin Hjörvarsson

Appl. Phys. Lett. 101, 063107 (2012)

https://doi.org/10.1063/1.4742931

Published: August 2012

View article titled, Influence of the magnetic field on the plasmonic properties of transparent Ni anti-dot arrays

Journal Articles

Electronic and chemical properties of the c-Si/Al₂O₃ interface

Florian Werner, Boris Veith, Dimitri Zielke, Lisa Kühnemund, Christoph Tegenkamp, Michael Seibt, Rolf Brendel, Jan Schmidt

J. Appl. Phys. 109, 113701 (2011)

https://doi.org/10.1063/1.3587227

Published: June 2011

View article titled, Electronic and chemical properties of the c-Si/Al2O3 interface

NARROW

Topics

On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon

Low-temperature silicon surface passivation for bulk lifetime studies based on Corona-charged Al₂O₃

Implementation of full-area-deposited electron-selective TiO_x layers into silicon solar cells

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd₂O₃ (111)/Si (111) heterostructures

Lifetime degradation in multicrystalline silicon under illumination at elevated temperature: Indications for the involvement of hydrogen

Electron-selective atomic-layer-deposited TiO_x layers: Impact of post-deposition annealing and implementation into n-type silicon solar cells

Reduction of parasitic absorption in PEDOT:PSS at the rear of c-Si solar cells

Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Instrumentation-related uncertainty of reflectance and transmittance measurements with a two-channel spectrophotometer

Lifetime degradation and regeneration in multicrystalline silicon under illumination at elevated temperature

Introduction to lethal circuit transformations

Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

Manipulating the negative fixed charge density at the c-Si/Al₂O₃ interface

Uncertainty of the coefficient of band-to-band absorption of crystalline silicon at near-infrared wavelengths

Aluminum-oxide-based inversion layer solar cells on n-type crystalline silicon: Fundamental properties and efficiency potential

Organic-silicon heterojunction solar cells: Open-circuit voltage potential and stability

Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers

Influence of the magnetic field on the plasmonic properties of transparent Ni anti-dot arrays

Electronic and chemical properties of the c-Si/Al₂O₃ interface

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