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Journal Articles

High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm

Jordan M. Smith, Panpan Li, Ryan Ley, Matthew S. Wong, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Appl. Phys. Lett. 125, 251107 (2024)

https://doi.org/10.1063/5.0235915

Published: December 2024

View article titled, High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm

Journal Articles

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Rinat Yapparov, Tanay Tak, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius

J. Appl. Phys. 136, 083103 (2024)

https://doi.org/10.1063/5.0227663

Published: August 2024

View article titled, Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Journal Articles

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Alejandro Quevedo, Feng Wu, Tsung-Yin Tsai, Jacob J. Ewing, Tanay Tak, Srinivas Gandrothula, Stephen Gee, Xianqing Li, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Appl. Phys. Lett. 125, 042104 (2024)

https://doi.org/10.1063/5.0217727

Published: July 2024

View article titled, Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Journal Articles

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Rinat Yapparov, Tanay Tak, Jacob Ewing, Feng Wu, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Saulius Marcinkevičius

Appl. Phys. Lett. 125, 031108 (2024)

https://doi.org/10.1063/5.0215336

Published: July 2024

View article titled, Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Journal Articles

Heated-H₃PO₄ etching of (001) β -Ga₂O₃

Steve Rebollo, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck

Appl. Phys. Lett. 125, 012102 (2024)

https://doi.org/10.1063/5.0209222

Published: July 2024

View article titled, Heated-H3PO4 etching of (001) β -Ga2O3

Journal Articles

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)]

Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Appl. Phys. Lett. 124, 199901 (2024)

https://doi.org/10.1063/5.0215569

Published: May 2024

View article titled, Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)]

Journal Articles

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Saulius Marcinkevičius, Tanay Tak, Yi Chao Chow, Feng Wu, Rinat Yapparov, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Appl. Phys. Lett. 124, 181108 (2024)

https://doi.org/10.1063/5.0206357

Published: May 2024

View article titled, Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Journal Articles

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Appl. Phys. Lett. 124, 172102 (2024)

https://doi.org/10.1063/5.0200424

Published: April 2024

View article titled, Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Journal Articles

Current transport mechanisms of metal/TiO₂/β-Ga₂O₃ diodes

Nolan S. Hendricks, Ahmad E. Islam, Elizabeth A. Sowers, Jeremiah Williams, Daniel M. Dryden, Kyle J. Liddy, Weisong Wang, James S. Speck, Andrew J. Green

J. Appl. Phys. 135, 095705 (2024)

https://doi.org/10.1063/5.0188432

Published: March 2024

View article titled, Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

Journal Articles

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Michael Wang, Feng Wu, Yifan Yao, Christian Zollner, Michael Iza, Michael Lam, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Appl. Phys. Lett. 123, 231101 (2023)

https://doi.org/10.1063/5.0165328

Published: December 2023

View article titled, 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Includes: Supplementary data

Journal Articles

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Saulius Marcinkevičius, Jacob Ewing, Rinat Yapparov, Feng Wu, Shuji Nakamura, James S. Speck

Appl. Phys. Lett. 123, 201102 (2023)

https://doi.org/10.1063/5.0179513

Published: November 2023

View article titled, Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Journal Articles

Vertical PtO_x/Pt/ β -Ga₂O₃ Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Esmat Farzana, Saurav Roy, Nolan S. Hendricks, Sriram Krishnamoorthy, James S. Speck

Appl. Phys. Lett. 123, 192102 (2023)

https://doi.org/10.1063/5.0171876

Published: November 2023

View article titled, Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Journal Articles

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Yi Chao Chow, Tanay Tak, Feng Wu, Jacob Ewing, Shuji Nakamura, Steven P. DenBaars, Yuh-Renn Wu, Claude Weisbuch, James S. Speck

Appl. Phys. Lett. 123, 091103 (2023)

https://doi.org/10.1063/5.0167779

Published: August 2023

View article titled, Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Includes: Supplementary data

Journal Articles

Effect of Mg doping on carrier recombination in GaN

Saulius Marcinkevičius, Yi Chao Chow, Shuji Nakamura, James S. Speck

J. Appl. Phys. 134, 085703 (2023)

https://doi.org/10.1063/5.0157378

Published: August 2023

View article titled, Effect of Mg doping on carrier recombination in GaN

Journal Articles

Atomic layer etching (ALE) of III-nitrides

Wan Ying Ho, Yi Chao Chow, Zachary Biegler, Kai Shek Qwah, Tanay Tak, Ashley Wissel-Garcia, Iris Liu, Feng Wu, Shuji Nakamura, James S. Speck

Appl. Phys. Lett. 123, 062102 (2023)

https://doi.org/10.1063/5.0159048

Published: August 2023

View article titled, Atomic layer etching (ALE) of III-nitrides

Journal Articles

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Wan Ying Ho, Cameron W. Johnson, Tanay Tak, Mylène Sauty, Yi Chao Chow, Shuji Nakamura, Andreas Schmid, Jacques Peretti, Claude Weisbuch, James S. Speck

Appl. Phys. Lett. 123, 031101 (2023)

https://doi.org/10.1063/5.0153947

Published: July 2023

View article titled, Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Includes: Supplementary data

Journal Articles

Controllable nitrogen doping of MOCVD Ga₂O₃ using NH₃

Fikadu Alema, Takeki Itoh, William Brand, Andrei Osinsky, James S. Speck

Appl. Phys. Lett. 122, 252105 (2023)

https://doi.org/10.1063/5.0149248

Published: June 2023

View article titled, Controllable nitrogen doping of MOCVD Ga2O3 using NH3

Journal Articles

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Fikadu Alema, Takeki Itoh, William Brand, Marko Tadjer, Andrei Osinsky, James S. Speck

J. Vac. Sci. Technol. A 41, 042709 (2023)

https://doi.org/10.1116/6.0002594

Published: June 2023

View article titled, N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Journal Articles

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Wan Ying Ho, Yi Chao Chow, Shuji Nakamura, Jacques Peretti, Claude Weisbuch, James S. Speck

Appl. Phys. Lett. 122, 212103 (2023)

https://doi.org/10.1063/5.0150029

Published: May 2023

View article titled, Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Includes: Supplementary data

Journal Articles

Continuous Si doping in (010) and (001) β-Ga₂O₃ films by plasma-assisted molecular beam epitaxy

Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck

APL Mater. 11, 041108 (2023)

https://doi.org/10.1063/5.0130654

Published: April 2023

View article titled, Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy

NARROW

Topics

High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Heated-H₃PO₄ etching of (001) β -Ga₂O₃

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124 , 172102 (2024)]

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Current transport mechanisms of metal/TiO₂/β-Ga₂O₃ diodes

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Vertical PtO_x/Pt/ β -Ga₂O₃ Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Effect of Mg doping on carrier recombination in GaN

Atomic layer etching (ALE) of III-nitrides

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Controllable nitrogen doping of MOCVD Ga₂O₃ using NH₃

N₂O grown high Al composition nitrogen doped β-(AlGa)₂O₃/β-Ga₂O₃ using MOCVD

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Continuous Si doping in (010) and (001) β-Ga₂O₃ films by plasma-assisted molecular beam epitaxy

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