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Journal Articles

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

Yong Chan Jung, Jin-Hyun Kim, Heber Hernandez-Arriaga, Jaidah Mohan, Su Min Hwang, Dan N. Le, Akshay Sahota, Harrison Sejoon Kim, Kihyun Kim, Rino Choi, Chang-Yong Nam, Daniel Alvarez, Jr., Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 222901 (2022)
https://doi.org/10.1063/5.0126695
Published: November 2022
View article titled, Robust low-temperature (350 °C) ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> fabricated using anhydrous H<sub>2</sub>O<sub>2</sub> as the ALD oxidant
Open the PDF for Robust low-temperature (350 °C) ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> fabricated using anhydrous H<sub>2</sub>O<sub>2</sub> as the ALD oxidant in another window
Journal Articles

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 242901 (2021)
https://doi.org/10.1063/5.0075466
Published: December 2021
View article titled, Low-thermal-budget (300 °C) ferroelectric TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors realized using high-pressure annealing
Open the PDF for Low-thermal-budget (300 °C) ferroelectric TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors realized using high-pressure annealing in another window
Includes: Supplementary data
Journal Articles

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors

Editor’s Pick
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim
Journal: AIP Advances
AIP Advances 11, 115213 (2021)
https://doi.org/10.1063/5.0066311
Published: November 2021
View article titled, Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
Open the PDF for Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors in another window
Includes: Supplementary data
Journal Articles

Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis

Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
Journal: APL Materials
APL Mater. 9, 031111 (2021)
https://doi.org/10.1063/5.0035848
Published: March 2021
View article titled, Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> thin films using synchrotron x-ray analysis
Open the PDF for Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> thin films using synchrotron x-ray analysis in another window
Includes: Supplementary data
Journal Articles

Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

Jaidah Mohan, Heber Hernandez-Arriaga, Yong Chan Jung, Takashi Onaya, Chang-Yong Nam, Esther H. R. Tsai, Si Joon Kim, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 102903 (2021)
https://doi.org/10.1063/5.0035579
Published: March 2021
View article titled, Ferroelectric polarization retention with scaling of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on silicon
Open the PDF for Ferroelectric polarization retention with scaling of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> on silicon in another window
Includes: Supplementary data
Journal Articles

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 232902 (2020)
https://doi.org/10.1063/5.0029709
Published: December 2020
View article titled, Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub>/ZrO<sub>2</sub> bilayer by atomic layer deposition
Open the PDF for Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub>/ZrO<sub>2</sub> bilayer by atomic layer deposition in another window
Includes: Supplementary data
Journal Articles

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors

Editor’s Pick
Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Su Min Hwang, Dushyant Narayan, Jae-Gil Lee, Chadwin D. Young, Luigi Colombo, Gary Goodman, Alan S. Wan, Pil-Ryung Cha, Scott R. Summerfelt, Tamer San, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 182901 (2019)
https://doi.org/10.1063/1.5126144
Published: October 2019
View article titled, Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors
Open the PDF for Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors in another window
Journal Articles

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

Featured
Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 182903 (2018)
https://doi.org/10.1063/1.5052012
Published: October 2018
View article titled, Low-voltage operation and high endurance of 5-nm ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors
Open the PDF for Low-voltage operation and high endurance of 5-nm ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> capacitors in another window
Journal Articles

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Editor’s Pick
Si Joon Kim, Jaidah Mohan, Jaebeom Lee, Joy S. Lee, Antonio T. Lucero, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 172902 (2018)
https://doi.org/10.1063/1.5026715
Published: April 2018
View article titled, Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films
Open the PDF for Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films in another window
Journal Articles

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Si Joon Kim, Dushyant Narayan, Jae-Gil Lee, Jaidah Mohan, Joy S. Lee, Jaebeom Lee, Harrison S. Kim, Young-Chul Byun, Antonio T. Lucero, Chadwin D. Young, Scott R. Summerfelt, Tamer San, Luigi Colombo, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 242901 (2017)
https://doi.org/10.1063/1.4995619
Published: December 2017
View article titled, Large ferroelectric polarization of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors due to stress-induced crystallization at low thermal budget
Open the PDF for Large ferroelectric polarization of TiN/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/TiN capacitors due to stress-induced crystallization at low thermal budget in another window
Includes: Supplementary data