1-20 of 98
Jack C. Lee
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors

Available to Purchase
Zecheng Wu, Yu Zhang, Shiqiang Lu, Rongxu Bai, Na Gao, Kai Huang, Hao Zhu, Shen Hu, Qingqing Sun, David Wei Zhang, Xingwei Ding, Jack C. Lee, Li Ji
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042402 (2022)
https://doi.org/10.1116/6.0001787
Published: May 2022
View articletitled, Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors
Open the PDF for Amorphous semi-insulating Al-doped In2O3 growth by atomic layer deposition for thin-film transistors in another window
Includes: Supplementary data
Journal Articles

Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications

FeaturedOpen Access
Ying-Chen Chen, Hui-Chun Huang, Chih-Yang Lin, Szu-Tung Hu, Chao-Cheng Lin, Jack C. Lee
Journal: AIP Advances
AIP Advances 9, 075119 (2019)
https://doi.org/10.1063/1.5097233
Published: July 2019
View articletitled, Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications
Open the PDF for Selectorless resistive switching memory: Non-uniform dielectric architecture and seasoning effect for low power array applications in another window
Includes: Supplementary data
Journal Articles

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

Available to Purchase
Yao-Feng Chang, Burt Fowler, Fei Zhou, Ying-Chen Chen, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 033504 (2016)
https://doi.org/10.1063/1.4940203
Published: January 2016
View articletitled, Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory
Open the PDF for Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory in another window
Journal Articles

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Available to Purchase
Fei Zhou, Yao-Feng Chang, Burt Fowler, Kwangsub Byun, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 063508 (2015)
https://doi.org/10.1063/1.4909533
Published: February 2015
View articletitled, Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
Open the PDF for Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory in another window
Journal Articles

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

Available to Purchase
Fei Zhou, Yao-Feng Chang, Yanzhen Wang, Yen-Ting Chen, Fei Xue, Burt W. Fowler, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 163506 (2014)
https://doi.org/10.1063/1.4900422
Published: October 2014
View articletitled, Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air
Open the PDF for Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air in another window
Journal Articles

Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory

Available to Purchase
Fei Zhou, Yao-Feng Chang, Kwangsub Byun, Burt Fowler, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 133501 (2014)
https://doi.org/10.1063/1.4896877
Published: September 2014
View articletitled, Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory
Open the PDF for Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory in another window
Journal Articles

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Available to Purchase
Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou, Jack C. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 043708 (2014)
https://doi.org/10.1063/1.4891242
Published: July 2014
View articletitled, Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
Open the PDF for Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization in another window
Journal Articles

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Available to Purchase
Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou, Jack C. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 043709 (2014)
https://doi.org/10.1063/1.4891244
Published: July 2014
View articletitled, Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
Open the PDF for Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing in another window
Journal Articles

Effects of sidewall etching on electrical properties of SiOx resistive random access memory

Available to Purchase
Yanzhen Wang, Burt Fowler, Fei Zhou, Yao-Feng Chang, Yen-Ting Chen, Fei Xue, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 213505 (2013)
https://doi.org/10.1063/1.4832595
Published: November 2013
View articletitled, Effects of sidewall etching on electrical properties of SiOx resistive random access memory
Open the PDF for Effects of sidewall etching on electrical properties of SiOx resistive random access memory in another window
Journal Articles

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

Available to Purchase
Yao-Feng Chang, Li Ji, Yanzhen Wang, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 193508 (2013)
https://doi.org/10.1063/1.4829526
Published: November 2013
View articletitled, Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory
Open the PDF for Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory in another window
Journal Articles

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

Available to Purchase
Yao-Feng Chang, Li Ji, Zhuo-Jie Wu, Fei Zhou, Yanzhen Wang, Fei Xue, Burt Fowler, Edward T. Yu, Paul S. Ho, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 033521 (2013)
https://doi.org/10.1063/1.4816162
Published: July 2013
View articletitled, Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
Open the PDF for Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory in another window
Journal Articles

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

Available to Purchase
Yao-Feng Chang, Pai-Yu Chen, Burt Fowler, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Jack C. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123702 (2012)
https://doi.org/10.1063/1.4769218
Published: December 2012
View articletitled, Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
Open the PDF for Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory in another window
Journal Articles

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Available to Purchase
Yanzhen Wang, Burt Fowler, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 183505 (2012)
https://doi.org/10.1063/1.4765356
Published: November 2012
View articletitled, Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory
Open the PDF for Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory in another window
Journal Articles

Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Available to Purchase
Mina J. Hanna, Han Zhao, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 153504 (2012)
https://doi.org/10.1063/1.4758995
Published: October 2012
View articletitled, Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors
Open the PDF for Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors in another window
Journal Articles

Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor

Available to Purchase
Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 063505 (2012)
https://doi.org/10.1063/1.4745203
Published: August 2012
View articletitled, Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor
Open the PDF for Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor in another window
Journal Articles

Study of polarity effect in SiOx-based resistive switching memory

Available to Purchase
Yao-Feng Chang, Pai-Yu Chen, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 052111 (2012)
https://doi.org/10.1063/1.4742894
Published: August 2012
View articletitled, Study of polarity effect in SiOx-based resistive switching memory
Open the PDF for Study of polarity effect in SiOx-based resistive switching memory in another window
Journal Articles

HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Available to Purchase
Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 243508 (2012)
https://doi.org/10.1063/1.4729606
Published: June 2012
View articletitled, HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
Open the PDF for HfO2 dielectrics engineering using low power SF6 plasma on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors in another window
Journal Articles

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

Available to Purchase
Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, Burt Fowler, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 083502 (2012)
https://doi.org/10.1063/1.3687724
Published: February 2012
View articletitled, Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Open the PDF for Memory switching properties of e-beam evaporated SiOx on N++ Si substrate in another window
Journal Articles

High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials

Available to Purchase
Fei Xue, Han Zhao, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Jack C. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 033507 (2011)
https://doi.org/10.1063/1.3611502
Published: July 2011
View articletitled, High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials
Open the PDF for High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials in another window
Journal Articles

Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric

Available to Purchase
Fei Xue, Han Zhao, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Jack C. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 040601 (2011)
https://doi.org/10.1116/1.3597199
Published: June 2011
View articletitled, Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric
Open the PDF for Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric in another window