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J.-Y. Duboz
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Journal Articles

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

C. A. Sgroi, J. Brault, J.-Y. Duboz, S. Chenot, P. Vennéguès, A. Ludwig, A. D. Wieck
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 012105 (2022)
https://doi.org/10.1063/5.0073864
Published: January 2022
View articletitled, Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature
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Journal Articles

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, N. Rochat, G. Feuillet, A. Courville, S. Vézian, J. Y. Duboz
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 025704 (2021)
https://doi.org/10.1063/5.0054810
Published: July 2021
View articletitled, Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization
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Journal Articles

Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara, B. Damilano, G. Feuillet, S. Vézian, K. Ayadi, S. Chenot, J.-Y. Duboz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 224503 (2019)
https://doi.org/10.1063/1.5121379
Published: December 2019
View articletitled, Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
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Journal Articles

(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, J.-Y. Duboz
Journal: AIP Advances
AIP Advances 9, 055101 (2019)
https://doi.org/10.1063/1.5092693
Published: May 2019
View articletitled, (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition
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Journal Articles

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

J. Zuniga-Perez, E. Mallet, R. Hahe, M. J. Rashid, S. Bouchoule, C. Brimont, P. Disseix, J. Y. Duboz, G. Gommé, T. Guillet, O. Jamadi, X. Lafosse, M. Leroux, J. Leymarie, Feng Li, F. Réveret, F. Semond
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 241113 (2014)
https://doi.org/10.1063/1.4884120
Published: June 2014
View articletitled, Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers
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Journal Articles

High quality factor AlN nanocavities embedded in a photonic crystal waveguide

D. Sam-Giao, D. Néel, S. Sergent, B. Gayral, M. J. Rashid, F. Semond, J. Y. Duboz, M. Mexis, T. Guillet, C. Brimont, S. David, X. Checoury, P. Boucaud
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 191104 (2012)
https://doi.org/10.1063/1.4712590
Published: May 2012
View articletitled, High quality factor AlN nanocavities embedded in a photonic crystal waveguide
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Journal Articles

Cleaved-facet violet laser diodes with lattice-matched Al 0.82 In 0.18 N / GaN multilayers as n -cladding

R. Charash, H. Kim-Chauveau, J-M. Lamy, M. Akther, P. P. Maaskant, E. Frayssinet, P. de Mierry, A. D. Dräger, J-Y. Duboz, A. Hangleiter, B. Corbett
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 201112 (2011)
https://doi.org/10.1063/1.3589974
Published: May 2011
View articletitled, Cleaved-facet violet laser diodes with lattice-matched Al 0.82 In 0.18 N / GaN multilayers as n -cladding
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Journal Articles

Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods

F. Réveret, K. Bejtka, P. R. Edwards, S. Chenot, I. R. Sellers, P. Disseix, A. Vasson, J. Leymarie, J. Y. Duboz, M. Leroux, F. Semond, R. W. Martin
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 043524 (2010)
https://doi.org/10.1063/1.3477450
Published: August 2010
View articletitled, Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods
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Journal Articles

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities

K. Bejtka, F. Réveret, R. W. Martin, P. R. Edwards, A. Vasson, J. Leymarie, I. R. Sellers, J. Y. Duboz, M. Leroux, F. Semond
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 241105 (2008)
https://doi.org/10.1063/1.2944263
Published: June 2008
View articletitled, Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities
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Journal Articles

Annealing effects on InGaAsN ∕ GaAs quantum wells analyzed using thermally detected optical absorption and ten band k − p calculations

T. Bouragba, M. Mihailovic, F. Reveret, P. Disseix, J. Leymarie, A. Vasson, B. Damilano, M. Hugues, J. Massies, J. Y. Duboz
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 073510 (2007)
https://doi.org/10.1063/1.2719289
Published: April 2007
View articletitled, Annealing effects on InGaAsN ∕ GaAs quantum wells analyzed using thermally detected optical absorption and ten band k − p calculations
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Journal Articles

Deep ultraviolet detection dynamics of AlGaN based devices

G. Mazzeo, G. Conte, J.-L. Reverchon, A. Dussaigne, J.-Y. Duboz
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 223513 (2006)
https://doi.org/10.1063/1.2397019
Published: November 2006
View articletitled, Deep ultraviolet detection dynamics of AlGaN based devices
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Journal Articles

Long wavelength emitting In As ∕ Ga 0.85 In 0.15 N x As 1 − x quantum dots on GaAs substrate

M. Richter, B. Damilano, J.-Y. Duboz, J. Massies, A. D. Wieck
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 231902 (2006)
https://doi.org/10.1063/1.2209879
Published: June 2006
View articletitled, Long wavelength emitting In As ∕ Ga 0.85 In 0.15 N x As 1 − x quantum dots on GaAs substrate
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Journal Articles

Optimum indium composition for ( Ga , In ) ( N , As ) ∕ Ga As quantum wells emitting beyond 1.5 μ m

M. Hugues, B. Damilano, J.-Y. Duboz, J. Massies
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 091111 (2006)
https://doi.org/10.1063/1.2180441
Published: March 2006
View articletitled, Optimum indium composition for ( Ga , In ) ( N , As ) ∕ Ga As quantum wells emitting beyond 1.5 μ m
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Journal Articles

Impact of N on the lasing characteristics of GaInNAs ∕ GaAs quantum well lasers emitting from 1.29 to 1.52 μ m

J. M. Ulloa, A. Hierro, M. Montes, B. Damilano, M. Hugues, J. Barjon, J.-Y. Duboz, J. Massies
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 251109 (2005)
https://doi.org/10.1063/1.2151249
Published: December 2005
View articletitled, Impact of N on the lasing characteristics of GaInNAs ∕ GaAs quantum well lasers emitting from 1.29 to 1.52 μ m
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Journal Articles

Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers

B. Damilano, J. Barjon, J.-Y. Duboz, J. Massies, A. Hierro, J.-M. Ulloa, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 071105 (2005)
https://doi.org/10.1063/1.1863433
Published: February 2005
View articletitled, Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
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Journal Articles

Tunnel current in quantum dot infrared photodetectors

J.-Y. Duboz, H. C. Liu, Z. R. Wasilewski, M. Byloss, R. Dudek
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 1320–1322 (2003)
https://doi.org/10.1063/1.1528293
Published: January 2003
View articletitled, Tunnel current in quantum dot infrared photodetectors
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Journal Articles

Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

J. Y. Duboz, J. L. Reverchon, D. Adam, B. Damilano, N. Grandjean, F. Semond, J. Massies
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 5602–5604 (2002)
https://doi.org/10.1063/1.1499741
Published: November 2002
View articletitled, Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation
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Journal Articles

Intersubband transitions in InGaNAs/GaAs quantum wells

J.-Y. Duboz, J. A. Gupta, M. Byloss, G. C. Aers, H. C. Liu, Z. R. Wasilewski
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1836–1838 (2002)
https://doi.org/10.1063/1.1500434
Published: September 2002
View articletitled, Intersubband transitions in InGaNAs/GaAs quantum wells
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Journal Articles

Field distribution and collection efficiency in an AlGaN metal–semiconductor–metal detector

L. Hirsch, P. Moretto, J. Y. Duboz, J. L. Reverchon, B. Damilano, N. Grandjean, F. Semond, J. Massies
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 6095–6098 (2002)
https://doi.org/10.1063/1.1467630
Published: May 2002
View articletitled, Field distribution and collection efficiency in an AlGaN metal–semiconductor–metal detector
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Journal Articles

Realization and optical characterization of etched mirror facets in GaN cavities

F. Binet, J. Y. Duboz, N. Laurent, C. Bonnat, P. Collot, F. Hanauer, O. Briot, R. L. Aulombard
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 960–962 (1998)
https://doi.org/10.1063/1.120934
Published: February 1998
View articletitled, Realization and optical characterization of etched mirror facets in GaN cavities
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