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Journal Articles

Ultra-efficient solid-state lighting: Likely characteristics, economic benefits, technological approaches

J. Y. Tsao

AIP Conf. Proc. 1519, 32–35 (2013)

https://doi.org/10.1063/1.4794703

Published: March 2013

View article titled, Ultra-efficient solid-state lighting: Likely characteristics, economic benefits, technological approaches

Journal Articles

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

W. W. Chow, M. H. Crawford, J. Y. Tsao, M. Kneissl

Appl. Phys. Lett. 97, 121105 (2010)

https://doi.org/10.1063/1.3490232

Published: September 2010

View article titled, Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

Journal Articles

Optically-pumped long-wavelength vertical-cavity surface-emitting laser with high modulation bandwidth

M. V. Ramana Murty, D. Xu, C.-C. Lin, C.-L. Shieh, J. Y. Tsao, Julian Cheng

Appl. Phys. Lett. 86, 061108 (2005)

https://doi.org/10.1063/1.1861118

Published: February 2005

View article titled, Optically-pumped long-wavelength vertical-cavity surface-emitting laser with high modulation bandwidth

Journal Articles

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

J. A. Olsen, E. L. Hu, S. R. Lee, I. J. Fritz, A. J. Howard, B. E. Hammons, J. Y. Tsao

J. Appl. Phys. 79, 3578–3584 (1996)

https://doi.org/10.1063/1.361410

Published: April 1996

View article titled, X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

Journal Articles

Dislocation formation mechanism in strained In_xGa_1−xAs islands grown on GaAs(001) substrates

Y. Chen, X. W. Lin, Z. Liliental‐Weber, J. Washburn, J. F. Klem, J. Y. Tsao

Appl. Phys. Lett. 68, 111–113 (1996)

https://doi.org/10.1063/1.116773

Published: January 1996

View article titled, Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates

Journal Articles

Nucleation of misfit dislocations in In_0.2Ga_0.8As epilayers grown on GaAs substrates

Y. Chen, Z. Liliental‐Weber, J. Washburn, J. F. Klem, J. Y. Tsao

Appl. Phys. Lett. 66, 499–501 (1995)

https://doi.org/10.1063/1.114069

Published: January 1995

View article titled, Nucleation of misfit dislocations in In0.2Ga0.8As epilayers grown on GaAs substrates

Journal Articles

Nonconservative formation of 〈100〉 misfit dislocation arrays at In_0.2Ga_0.8As/GaAs(001) interfaces during post‐growth annealing

Y. Chen, Z. Liliental‐Weber, J. Washburn, J. F. Klem, J. Y. Tsao

Appl. Phys. Lett. 63, 2234–2236 (1993)

https://doi.org/10.1063/1.110537

Published: October 1993

View article titled, Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing

Journal Articles

Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substrates

Zuzanna Liliental‐Weber, Y. Chen, P. Werner, N. Zakharov, W. Swider, J. Washburn, J. F. Klem, J. Y. Tsao

J. Vac. Sci. Technol. B 11, 1379–1383 (1993)

https://doi.org/10.1116/1.586944

Published: July 1993

View article titled, Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substrates

Journal Articles

Terrace width evolution during step‐flow growth with multiterrace adatom migration

S. A. Chalmers, J. Y. Tsao, A. C. Gossard

J. Appl. Phys. 73, 7351–7357 (1993)

https://doi.org/10.1063/1.354026

Published: June 1993

View article titled, Terrace width evolution during step‐flow growth with multiterrace adatom migration

Journal Articles

Stress releasing mechanisms in In_0.2Ga_0.8As layers grown on misoriented GaAs [001] substrate

P. Werner, N. D. Zakharov, Y. Chen, Z. Liliental‐Weber, J. Washburn, J. F. Klem, J. Y. Tsao

Appl. Phys. Lett. 62, 2798–2800 (1993)

https://doi.org/10.1063/1.109213

Published: May 1993

View article titled, Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate

Journal Articles

Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

Y. Chen, N. D. Zakharov, P. Werner, Z. Liliental‐Weber, J. Washburn, J. F. Klem, J. Y. Tsao

Appl. Phys. Lett. 62, 1536–1538 (1993)

https://doi.org/10.1063/1.108632

Published: March 1993

View article titled, Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

Journal Articles

Lateral motion of terrace width distributions during step‐flow growth

S. A. Chalmers, J. Y. Tsao, A. C. Gossard

Appl. Phys. Lett. 61, 645–647 (1992)

https://doi.org/10.1063/1.107809

Published: August 1992

View article titled, Lateral motion of terrace width distributions during step‐flow growth

Journal Articles

Reactive sticking of As₄ during molecular beam homoepitaxy of GaAs, AlAs, and InAs

T. M. Brennan, J. Y. Tsao, B. E. Hammons

J. Vac. Sci. Technol. A 10, 33–45 (1992)

https://doi.org/10.1116/1.578147

Published: January 1992

View article titled, Reactive sticking of As4 during molecular beam homoepitaxy of GaAs, AlAs, and InAs

Journal Articles

Simulations of layer‐by‐layer sputtering during epitaxy

E. Chason, P. Bedrossian, J. E. Houston, J. Y. Tsao, B. W. Dodson, S. T. Picraux

Appl. Phys. Lett. 59, 3533–3535 (1991)

https://doi.org/10.1063/1.105648

Published: December 1991

View article titled, Simulations of layer‐by‐layer sputtering during epitaxy

Journal Articles

Thermal desorption of InSb surface oxides

J. F. Klem, J. Y. Tsao, J. L. Reno, A. Datye, S. Chadda

J. Vac. Sci. Technol. A 9, 2996–2998 (1991)

https://doi.org/10.1116/1.577162

Published: November 1991

View article titled, Thermal desorption of InSb surface oxides

Journal Articles

Near‐infrared high‐gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption

R. P. Bryan, G. R. Olbright, W. S. Fu, T. M. Brennan, J. Y. Tsao

Appl. Phys. Lett. 59, 1600–1602 (1991)

https://doi.org/10.1063/1.106268

Published: September 1991

View article titled, Near‐infrared high‐gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption

Journal Articles

Hydrogen ion beam smoothening of Ge(001)

K. M. Horn, J. Y. Tsao, E. Chason, D. K. Brice, S. T. Picraux

J. Appl. Phys. 69, 243–249 (1991)

https://doi.org/10.1063/1.347758

Published: January 1991

View article titled, Hydrogen ion beam smoothening of Ge(001)

Journal Articles

Ion beam enhanced epitaxial growth of Ge (001)

E. Chason, P. Bedrossian, K. M. Horn, J. Y. Tsao, S. T. Picraux

Appl. Phys. Lett. 57, 1793–1795 (1990)

https://doi.org/10.1063/1.104024

Published: October 1990

View article titled, Ion beam enhanced epitaxial growth of Ge (001)

Journal Articles

Two semiempirical expressions for condensed‐phase heat capacities

J. Y. Tsao

J. Appl. Phys. 68, 1928–1930 (1990)

https://doi.org/10.1063/1.346588

Published: August 1990

View article titled, Two semiempirical expressions for condensed‐phase heat capacities

Journal Articles

Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy

E. Chason, J. Y. Tsao, K. M. Horn, S. T. Picraux, H. A. Atwater

J. Vac. Sci. Technol. A 8, 2507–2511 (1990)

https://doi.org/10.1116/1.576724

Published: May 1990

View article titled, Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy

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Ultra-efficient solid-state lighting: Likely characteristics, economic benefits, technological approaches

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

Optically-pumped long-wavelength vertical-cavity surface-emitting laser with high modulation bandwidth

X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

Dislocation formation mechanism in strained In_xGa_1−xAs islands grown on GaAs(001) substrates

Nucleation of misfit dislocations in In_0.2Ga_0.8As epilayers grown on GaAs substrates

Nonconservative formation of 〈100〉 misfit dislocation arrays at In_0.2Ga_0.8As/GaAs(001) interfaces during post‐growth annealing

Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substrates

Terrace width evolution during step‐flow growth with multiterrace adatom migration

Stress releasing mechanisms in In_0.2Ga_0.8As layers grown on misoriented GaAs [001] substrate

Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

Lateral motion of terrace width distributions during step‐flow growth

Reactive sticking of As₄ during molecular beam homoepitaxy of GaAs, AlAs, and InAs

Simulations of layer‐by‐layer sputtering during epitaxy

Thermal desorption of InSb surface oxides

Near‐infrared high‐gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption

Hydrogen ion beam smoothening of Ge(001)

Ion beam enhanced epitaxial growth of Ge (001)

Two semiempirical expressions for condensed‐phase heat capacities

Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy

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