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1-20 of 63
J. Wecker
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Journal Articles
Diode effect in all-oxide Sr 2 Fe Mo O 6 -based magnetic tunnel junctions
Available to Purchase
Journal:
Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 99, 08J107 (2006)
Published: April 2006
Journal Articles
Interface sharpening in CoFeB magnetic tunnel junctions
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 88, 162505 (2006)
Published: April 2006
Journal Articles
Submicron-sized magnetic tunnel junctions in field programmable logic gate arrays
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Journal:
Journal of Applied Physics
J. Appl. Phys. 99, 023907 (2006)
Published: January 2006
Journal Articles
Switching of submicron-sized, antiferromagnetically coupled Co Fe B ∕ Ru ∕ Co Fe B trilayers
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Journal:
Journal of Applied Physics
J. Appl. Phys. 98, 103904 (2005)
Published: November 2005
Journal Articles
Large tunnel magnetoresistance with plasma oxidized MgO barrier
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Journal:
Journal of Applied Physics
J. Appl. Phys. 98, 073705 (2005)
Published: October 2005
Journal Articles
Precessional direct-write switching in micrometer-sized magnetic tunnel junctions
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Journal:
Journal of Applied Physics
J. Appl. Phys. 97, 074503 (2005)
Published: March 2005
Journal Articles
Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes
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Journal:
Journal of Applied Physics
J. Appl. Phys. 96, 6382–6386 (2004)
Published: December 2004
Journal Articles
Antiferromagnetically coupled Co Fe B ∕ Ru ∕ Co Fe B trilayers
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 85, 2020–2022 (2004)
Published: September 2004
Journal Articles
Magnetic tunnel junctions with yttrium oxide barrier
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 83, 3338–3340 (2003)
Published: October 2003
Journal Articles
Thermally induced changes of magnetic coupling in a pinned artificial antiferromagnet used in magnetic tunnel junctions
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Journal:
Journal of Applied Physics
J. Appl. Phys. 94, 3268–3270 (2003)
Published: September 2003
Journal Articles
Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 83, 948–950 (2003)
Published: August 2003
Journal Articles
Size dependence of switching field of magnetic tunnel junctions down to 50 nm scale
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Journal:
Journal of Applied Physics
J. Appl. Phys. 94, 2028–2032 (2003)
Published: August 2003
Journal Articles
Highly sensitive strain sensors based on magnetic tunneling junctions
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 81, 313–315 (2002)
Published: July 2002
Journal Articles
Magnetotransport and microstructure of annealed magnetic tunnel junctions
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 6617–6625 (2002)
Published: May 2002
Journal Articles
Tunneling systems for field programmable spin-logic gates
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 8402–8404 (2002)
Published: May 2002
Journal Articles
Evolution of magnetic coupling in ferromagnetic tunnel junctions by annealing
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 7478–7480 (2002)
Published: May 2002
Journal Articles
Creation and annihilation of 360° domain walls in magnetic tunnel junctions with exchange-biased artificial ferrimagnet
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 7962–7964 (2002)
Published: May 2002
Journal Articles
Comparison of hard magnetic electrodes for magneto-electronics by magnetic force microscopy
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 7029–7031 (2002)
Published: May 2002
Journal Articles
Nonvolatile field programmable spin-logic for reconfigurable computing
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 80, 1291–1293 (2002)
Published: February 2002
Journal Articles
Tunnel-magnetoresistance system with an amorphous detection layer
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Journal:
Journal of Applied Physics
J. Appl. Phys. 91, 1701–1703 (2002)
Published: February 2002
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