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Journal Articles

Dopant activation in ion implanted silicon by microwave annealing

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T. L. Alford, D. C. Thompson, J. W. Mayer, N. David Theodore
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 114902 (2009)
https://doi.org/10.1063/1.3260245
Published: December 2009
View articletitled, Dopant activation in ion implanted silicon by microwave annealing
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Journal Articles

Spectroscopic study of microwave-enhanced silicon exfoliation

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D. C. Thompson, T. L. Alford, J. W. Mayer
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 082102 (2008)
https://doi.org/10.1063/1.2842420
Published: February 2008
View articletitled, Spectroscopic study of microwave-enhanced silicon exfoliation
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Journal Articles

Improved surface morphology and texture of Ag films on indium tin oxide via Cu additions

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H. Han, Yeongseok Zoo, J. W. Mayer, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 036101 (2007)
https://doi.org/10.1063/1.2761822
Published: August 2007
View articletitled, Improved surface morphology and texture of Ag films on indium tin oxide via Cu additions
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Journal Articles

Microwave enhanced ion-cut silicon layer transfer

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D. C. Thompson, T. L. Alford, J. W. Mayer, T. Höchbauer, J. K. Lee, M. Nastasi, S. S. Lau, N. David Theodore, Paul K. Chu
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 114915 (2007)
https://doi.org/10.1063/1.2737387
Published: June 2007
View articletitled, Microwave enhanced ion-cut silicon layer transfer
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Journal Articles

Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air

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H. Han, J. W. Mayer, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 083715 (2006)
https://doi.org/10.1063/1.2357647
Published: October 2006
View articletitled, Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air
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Journal Articles

Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate

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H. Han, J. W. Mayer, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 123711 (2006)
https://doi.org/10.1063/1.2204815
Published: June 2006
View articletitled, Effect of various annealing environments on electrical and optical properties of indium tin oxide on polyethylene napthalate
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Journal Articles

Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy

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Lin Shao, J. K. Lee, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 126105 (2006)
https://doi.org/10.1063/1.2204330
Published: June 2006
View articletitled, Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy
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Journal Articles

Fabrication of silicon-on- Si O 2 /diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

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Zengfeng Di, Paul K. Chu, Ming Zhu, Ricky K. Y. Fu, Suhua Luo, Lin Shao, M. Nastasi, Peng Chen, T. L. Alford, J. W. Mayer, Miao Zhang, Weili Liu, Zhitang Song, Chenglu Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 142108 (2006)
https://doi.org/10.1063/1.2192981
Published: April 2006
View articletitled, Fabrication of silicon-on- Si O 2 /diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects
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Journal Articles

H-induced platelet and crack formation in hydrogenated epitaxial Si ∕ Si 0.98 B 0.02 ∕ Si structures

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Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 021901 (2006)
https://doi.org/10.1063/1.2163992
Published: January 2006
View articletitled, H-induced platelet and crack formation in hydrogenated epitaxial Si ∕ Si 0.98 B 0.02 ∕ Si structures
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Journal Articles

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

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Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 251907 (2005)
https://doi.org/10.1063/1.2146211
Published: December 2005
View articletitled, Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
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Journal Articles

Microwave-cut silicon layer transfer

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D. C. Thompson, T. L. Alford, J. W. Mayer, T. Hochbauer, M. Nastasi, S. S. Lau, N. David Theodore, K. Henttinen, llkka Suni, Paul K. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 224103 (2005)
https://doi.org/10.1063/1.2135395
Published: November 2005
View articletitled, Microwave-cut silicon layer transfer
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Journal Articles

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

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H. Han, Daniel Adams, J. W. Mayer, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 083705 (2005)
https://doi.org/10.1063/1.2106013
Published: October 2005
View articletitled, Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate
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Journal Articles

A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis

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Lin Shao, Yongqiang Wang, J. K. Lee, M. Nastasi, Phillip E. Thompson, N. David Theodore, J. W. Mayer
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 131901 (2005)
https://doi.org/10.1063/1.2058200
Published: September 2005
View articletitled, A technique to study the lattice location of hydrogen atoms in silicon by channeling elastic recoil detection analysis
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Journal Articles

Silicon layer transfer using plasma hydrogenation

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Peng Chen, S. S. Lau, Paul K. Chu, K. Henttinen, T. Suni, I. Suni, N. David Theodore, T. L. Alford, J. W. Mayer, Lin Shao, M. Nastasi
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 111910 (2005)
https://doi.org/10.1063/1.2048811
Published: September 2005
View articletitled, Silicon layer transfer using plasma hydrogenation
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Journal Articles

Plasma hydrogenation of strained Si ∕ SiGe ∕ Si heterostructure for layer transfer without ion implantation

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Lin Shao, Yuan Lin, J. K. Lee, Q. X. Jia, Yongqiang Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Paul K. Chu, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 091902 (2005)
https://doi.org/10.1063/1.2032602
Published: August 2005
View articletitled, Plasma hydrogenation of strained Si ∕ SiGe ∕ Si heterostructure for layer transfer without ion implantation
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Journal Articles

Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

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Lin Shao, Y. Q. Wang, X. Zhang, C. J. Wetteland, M. Nastasi, P. E. Thompson, J. W. Mayer
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 221913 (2005)
https://doi.org/10.1063/1.1941454
Published: May 2005
View articletitled, Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry
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Journal Articles

Investigation of plasma hydrogenation and trapping mechanism for layer transfer

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Peng Chen, Paul K. Chu, T. Höchbauer, J.-K. Lee, M. Nastasi, D. Buca, S. Mantl, R. Loo, M. Caymax, T. Alford, J. W. Mayer, N. David Theodore, M. Cai, B. Schmidt, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 031904 (2005)
https://doi.org/10.1063/1.1852087
Published: January 2005
View articletitled, Investigation of plasma hydrogenation and trapping mechanism for layer transfer
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Journal Articles

Ag metallization on silicides with nitride barriers

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M. M. Mitan, H. C. Kim, T. L. Alford, J. W. Mayer, G. F. Malgas, Daniel Adams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2804–2810 (2004)
https://doi.org/10.1116/1.1815312
Published: November 2004
View articletitled, Ag metallization on silicides with nitride barriers
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Journal Articles

Plasma hydrogenation of strain-relaxed Si Ge ∕ Si heterostructure for layer transfer

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Peng Chen, Paul K. Chu, T. Höchbauer, M. Nastasi, D. Buca, S. Mantl, N. David Theodore, T. L. Alford, J. W. Mayer, R. Loo, M. Caymax, M. Cai, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4944–4946 (2004)
https://doi.org/10.1063/1.1824171
Published: November 2004
View articletitled, Plasma hydrogenation of strain-relaxed Si Ge ∕ Si heterostructure for layer transfer
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Journal Articles

Effectiveness of reactive sputter-deposited Ta–N films as diffusion barriers for Ag metallization

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Daniel Adams, Gerald F. Malgas, N. David Theodore, Rich Gregory, H. C. Kim, E. Misra, T. L. Alford, J. W. Mayer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2345–2352 (2004)
https://doi.org/10.1116/1.1787521
Published: October 2004
View articletitled, Effectiveness of reactive sputter-deposited Ta–N films as diffusion barriers for Ag metallization
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