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J. S. Williams
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Journal Articles

Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods

Open Access
X. Huang, S. Q. Lim, T. Ratcliff, L. A. Smillie, G. J. Grzybowski, B. B. Claflin, J. M. Warrender, J. S. Williams
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 044001 (2024)
https://doi.org/10.1116/6.0003668
Published: June 2024
View articletitled, Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods
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Journal Articles

Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization

Open Access
S. Q. Lim, L. Q. Huston, L. A. Smillie, G. J. Grzybowski, X. Huang, J. S. Williams, B. B. Claflin
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 235302 (2023)
https://doi.org/10.1063/5.0149483
Published: June 2023
View articletitled, Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization
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Journal Articles

A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection

Free
S. Q. Lim, A. J. Akey, E. Napolitani, P. K. Chow, J. M. Warrender, J. S. Williams
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 065701 (2021)
https://doi.org/10.1063/5.0035620
Published: February 2021
View articletitled, A critical evaluation of Ag- and Ti-hyperdoped Si for Si-based infrared light detection
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Includes: Supplementary data
Journal Articles

Erratum: “Application of the James criterion to explosives with thick cover plates” [J. Appl. Phys. 128, 175103 (2020)]

Free
J. S. Williams, W. S. Howard, S. P. Hawkins
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 209901 (2020)
https://doi.org/10.1063/5.0036519
Published: November 2020
View articletitled, Erratum: “Application of the James criterion to explosives with thick cover plates” [J. Appl. Phys. 128, 175103 (2020)]
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Journal Articles

Application of the James criterion to explosives with thick cover plates

Available to Purchase
J. S. Williams, W. S. Howard, S. P. Hawkins
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 175103 (2020)
https://doi.org/10.1063/5.0023210
Published: November 2020
View articletitled, Application of the James criterion to explosives with thick cover plates
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Journal Articles

Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors

Open Access
S. Q. Lim, C. T.-K. Lew, P. K. Chow, J. M. Warrender, J. S. Williams, B. C. Johnson
Journal: APL Materials
APL Mater. 8, 061109 (2020)
https://doi.org/10.1063/5.0010083
Published: June 2020
View articletitled, Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors
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Includes: Supplementary data
Journal Articles

Process-induced defects in Au-hyperdoped Si photodiodes

Free
S. Q. Lim, C. T.-K. Lew, P. K. Chow, J. M. Warrender, J. S. Williams, B. C. Johnson
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 224502 (2019)
https://doi.org/10.1063/1.5128146
Published: December 2019
View articletitled, Process-induced defects in Au-hyperdoped Si photodiodes
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Journal Articles

Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting

Open Access
W. Yang, N. Ferdous, P. J. Simpson, J. M. Gaudet, Q. Hudspeth, P. K. Chow, J. M. Warrender, A. J. Akey, M. J. Aziz, E. Ertekin, J. S. Williams
Journal: APL Materials
APL Mater. 7, 101124 (2019)
https://doi.org/10.1063/1.5124709
Published: October 2019
View articletitled, Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting
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Journal Articles

Thermal evolution of the indentation-induced phases of silicon

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S. Wong, B. C. Johnson, B. Haberl, A. Mujica, J. C. McCallum, J. S. Williams, J. E. Bradby
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 105901 (2019)
https://doi.org/10.1063/1.5108751
Published: September 2019
View articletitled, Thermal evolution of the indentation-induced phases of silicon
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Journal Articles

The high pressure phase transformation behavior of silicon nanowires

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L. Q. Huston, A. Lugstein, J. S. Williams, J. E. Bradby
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 123103 (2018)
https://doi.org/10.1063/1.5048033
Published: September 2018
View articletitled, The high pressure phase transformation behavior of silicon nanowires
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Journal Articles

Thermal stability of simple tetragonal and hexagonal diamond germanium

Free
L. Q. Huston, B. C. Johnson, B. Haberl, S. Wong, J. S. Williams, J. E. Bradby
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 175108 (2017)
https://doi.org/10.1063/1.5002705
Published: November 2017
View articletitled, Thermal stability of simple tetragonal and hexagonal diamond germanium
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Journal Articles

Cold nanoindentation of germanium

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L. Q. Huston, M. S. R. N. Kiran, L. A. Smillie, J. S. Williams, J. E. Bradby
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 021901 (2017)
https://doi.org/10.1063/1.4993163
Published: July 2017
View articletitled, Cold nanoindentation of germanium
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Journal Articles

Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys” [J. Appl. Phys. 119 , 094303 (2016)]

Free
H. S. Alkhaldi, F. Kremer, T. Bierschenk, J. L. Hansen, A. Nylandsted-Larsen, J. S. Williams, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 049902 (2017)
https://doi.org/10.1063/1.4975029
Published: January 2017
View articletitled, Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys” [J. Appl. Phys. 119 , 094303 (2016)]
Open the PDF for Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys” [J. Appl. Phys. 119 , 094303 (2016)] in another window
Journal Articles

The influence of capping layers on pore formation in Ge during ion implantation

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H. S. Alkhaldi, Tuan T. Tran, F. Kremer, J. S. Williams
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 215706 (2016)
https://doi.org/10.1063/1.4969051
Published: December 2016
View articletitled, The influence of capping layers on pore formation in Ge during ion implantation
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Journal Articles

Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

Free
Tuan T. Tran, Huda S. Alkhaldi, Hemi H. Gandhi, David Pastor, Larissa Q. Huston, Jennifer Wong-Leung, Michael J. Aziz, J. S. Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 082106 (2016)
https://doi.org/10.1063/1.4961620
Published: August 2016
View articletitled, Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer
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Journal Articles

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

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Tuan T. Tran, David Pastor, Hemi H. Gandhi, Lachlan A. Smillie, Austin J. Akey, Michael J. Aziz, J. S. Williams
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 183102 (2016)
https://doi.org/10.1063/1.4948960
Published: May 2016
View articletitled, Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material
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Includes: Supplementary data
Journal Articles

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys

Available to Purchase
H. S. Alkhaldi, F. Kremer, T. Bierschenk, J. L. Hansen, A. Nylandsted-Larsen, J. S. Williams, M. C. Ridgway
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 094303 (2016)
https://doi.org/10.1063/1.4942995
Published: March 2016
View articletitled, Porosity as a function of stoichiometry and implantation temperature in Ge/Si1−xGex alloys
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Journal Articles

The influence of hold time on the onset of plastic deformation in silicon

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S. Wong, B. Haberl, J. S. Williams, J. E. Bradby
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 245904 (2015)
https://doi.org/10.1063/1.4938480
Published: December 2015
View articletitled, The influence of hold time on the onset of plastic deformation in silicon
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Journal Articles

Phase transformation as the single-mode mechanical deformation of silicon

Free
S. Wong, B. Haberl, J. S. Williams, J. E. Bradby
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 252103 (2015)
https://doi.org/10.1063/1.4923205
Published: June 2015
View articletitled, Phase transformation as the single-mode mechanical deformation of silicon
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Journal Articles

Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation

Free
M. S. R. N. Kiran, T. T. Tran, L. A. Smillie, B. Haberl, D. Subianto, J. S. Williams, J. E. Bradby
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 205901 (2015)
https://doi.org/10.1063/1.4921534
Published: May 2015
View articletitled, Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
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Includes: Supplementary data