1-20 of 44
J. S. Blakemore
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Melt‐grown p‐type GaAs with iron doping

R‐S. Tang, S. B. Saban, J. S. Blakemore, M. L. Gray
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 7416–7421 (1993)
https://doi.org/10.1063/1.354006
Published: June 1993
View article titled, Melt‐grown <em>p</em>‐type GaAs with iron doping
Open the PDF for Melt‐grown <em>p</em>‐type GaAs with iron doping in another window
Journal Articles

Iron doped bulk semi‐insulating GaAs

M. L. Gray, L. Peterson, R‐S. Tang, S. B. Saban, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 3319–3325 (1993)
https://doi.org/10.1063/1.352981
Published: April 1993
View article titled, Iron doped bulk semi‐insulating GaAs
Open the PDF for Iron doped bulk semi‐insulating GaAs in another window
Journal Articles

Evaluation of local vibrational mode absorption caused by carbon in GaAs

S. B. Saban, J. S. Blakemore, P. E. R. Nordquist, R. L. Henry, R. J. Gorman
Journal: Journal of Applied Physics
J. Appl. Phys. 72, 2505–2507 (1992)
https://doi.org/10.1063/1.351543
Published: September 1992
View article titled, Evaluation of local vibrational mode absorption caused by carbon in GaAs
Open the PDF for Evaluation of local vibrational mode absorption caused by carbon in GaAs in another window
Journal Articles

Properties of semi‐insulating GaAs grown by a vertical molten zone method

R.‐S. Tang, L. Sargent, J. S. Blakemore, E. M. Swiggard
Journal: Journal of Applied Physics
J. Appl. Phys. 67, 852–858 (1990)
https://doi.org/10.1063/1.345742
Published: January 1990
View article titled, Properties of semi‐insulating GaAs grown by a vertical molten zone method
Open the PDF for Properties of semi‐insulating GaAs grown by a vertical molten zone method in another window
Journal Articles

Undoped semi‐insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction

R.‐S. Tang, J. S. Blakemore, R. E. Kremer, K. M. Burke
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 5428–5434 (1989)
https://doi.org/10.1063/1.343691
Published: December 1989
View article titled, Undoped semi‐insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction
Open the PDF for Undoped semi‐insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction in another window
Journal Articles

Characterization of n‐type regions in GaAs formed by silicon fluoride molecular ion implantations

M. L. Gray, J. M. Parsey, Jr., R. E. Ahrens, S. J. Pearton, K. T. Short, L. Sargent, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 4176–4180 (1989)
https://doi.org/10.1063/1.344002
Published: November 1989
View article titled, Characterization of <em>n</em>‐type regions in GaAs formed by silicon fluoride molecular ion implantations
Open the PDF for Characterization of <em>n</em>‐type regions in GaAs formed by silicon fluoride molecular ion implantations in another window
Journal Articles

Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs

R‐S. Tang, L. Sargent, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 256–261 (1989)
https://doi.org/10.1063/1.343866
Published: July 1989
View article titled, Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs
Open the PDF for Compensation assessment in ‘‘undoped’’ high‐resistivity GaAs in another window
Journal Articles

Assessment of the ionized EL2 fraction in semi‐insulating GaAs

J. S. Blakemore, L. Sargent, R‐S. Tang, E. M. Swiggard
Journal: Applied Physics Letters
Appl. Phys. Lett. 54, 2106–2108 (1989)
https://doi.org/10.1063/1.101163
Published: May 1989
View article titled, Assessment of the ionized EL2 fraction in semi‐insulating GaAs
Open the PDF for Assessment of the ionized EL2 fraction in semi‐insulating GaAs in another window
Journal Articles

Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAs

L. Sargent, J. S. Blakemore
Journal: Applied Physics Letters
Appl. Phys. Lett. 54, 1013–1015 (1989)
https://doi.org/10.1063/1.100783
Published: March 1989
View article titled, Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAs
Open the PDF for Temperature dependence of local vibrational mode optical absorption for carbon acceptors in GaAs in another window
Journal Articles

The role of crystal‐growth properties on silicon implant activation processes for GaAs

M. L. Gray, J. M. Parsey, Jr., S. J. Pearton, K. T. Short, R. E. Ahrens, L. Sargent, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 64, 1464–1467 (1988)
https://doi.org/10.1063/1.341818
Published: August 1988
View article titled, The role of crystal‐growth properties on silicon implant activation processes for GaAs
Open the PDF for The role of crystal‐growth properties on silicon implant activation processes for GaAs in another window
Journal Articles

EL2 distributions in vertical gradient freeze GaAs crystals

M. L. Gray, L. Sargent, J. S. Blakemore, J. M. Parsey, Jr., J. E. Clemans
Journal: Journal of Applied Physics
J. Appl. Phys. 63, 5689–5693 (1988)
https://doi.org/10.1063/1.340304
Published: June 1988
View article titled, EL2 distributions in vertical gradient freeze GaAs crystals
Open the PDF for EL2 distributions in vertical gradient freeze GaAs crystals in another window
Journal Articles

An evaluation of horizontal Bridgman‐grown, undoped, semi‐insulating GaAs

M. L. Gray, L. Sargent, K. M. Burke, K. A. Grim, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 63, 4413–4417 (1988)
https://doi.org/10.1063/1.340185
Published: May 1988
View article titled, An evaluation of horizontal Bridgman‐grown, undoped, semi‐insulating GaAs
Open the PDF for An evaluation of horizontal Bridgman‐grown, undoped, semi‐insulating GaAs in another window
Journal Articles

Mid‐infrared dispersion of the refractive index and reflectivity for GaAs

J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 4528–4532 (1987)
https://doi.org/10.1063/1.339044
Published: December 1987
View article titled, Mid‐infrared dispersion of the refractive index and reflectivity for GaAs
Open the PDF for Mid‐infrared dispersion of the refractive index and reflectivity for GaAs in another window
Journal Articles

Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach

R. E. Kremer, M. C. Arikan, J. C. Abele, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 2424–2431 (1987)
https://doi.org/10.1063/1.339849
Published: September 1987
View article titled, Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach
Open the PDF for Transient photoconductivity measurements in semi‐insulating GaAs. I. An analog approach in another window
Journal Articles

Transient photoconductivity measurements in semi‐insulating GaAs. II. A digital approach

J. C. Abele, R. E. Kremer, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 2432–2438 (1987)
https://doi.org/10.1063/1.339476
Published: September 1987
View article titled, Transient photoconductivity measurements in semi‐insulating GaAs. II. A digital approach
Open the PDF for Transient photoconductivity measurements in semi‐insulating GaAs. II. A digital approach in another window
Journal Articles

Mapping of GaAs wafers by quantitative infrared microscopy

P. Dobrilla, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 61, 1442–1448 (1987)
https://doi.org/10.1063/1.338074
Published: February 1987
View article titled, Mapping of GaAs wafers by quantitative infrared microscopy
Open the PDF for Mapping of GaAs wafers by quantitative infrared microscopy in another window
Journal Articles

Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs

P. Dobrilla, J. S. Blakemore
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 169–176 (1986)
https://doi.org/10.1063/1.337670
Published: July 1986
View article titled, Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs
Open the PDF for Distributions of residual stress, dislocations, and EL2 in Czochralski‐grown semi‐insulating GaAs in another window
Journal Articles

Optical mapping of residual stress in Czochralski grown GaAs

P. Dobrilla, J. S. Blakemore
Journal: Applied Physics Letters
Appl. Phys. Lett. 48, 1303–1305 (1986)
https://doi.org/10.1063/1.96960
Published: May 1986
View article titled, Optical mapping of residual stress in Czochralski grown GaAs
Open the PDF for Optical mapping of residual stress in Czochralski grown GaAs in another window
Journal Articles

GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations

P. Dobrilla, J. S. Blakemore, A. J. McCamant, K. R. Gleason, R. Y. Koyama
Journal: Applied Physics Letters
Appl. Phys. Lett. 47, 602–604 (1985)
https://doi.org/10.1063/1.96085
Published: September 1985
View article titled, GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
Open the PDF for GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations in another window
Journal Articles

Factors affecting the spatial distribution of the principal midgap donor in semi‐insulating gallium arsenide wafers

J. S. Blakemore, P. Dobrilla
Journal: Journal of Applied Physics
J. Appl. Phys. 58, 204–207 (1985)
https://doi.org/10.1063/1.336280
Published: July 1985
View article titled, Factors affecting the spatial distribution of the principal midgap donor in semi‐insulating gallium arsenide wafers
Open the PDF for Factors affecting the spatial distribution of the principal midgap donor in semi‐insulating gallium arsenide wafers in another window