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Journal Articles

Indentation size effects in single crystal copper as revealed by synchrotron x-ray microdiffraction

G. Feng, A. S. Budiman, W. D. Nix, N. Tamura, J. R. Patel

J. Appl. Phys. 104, 043501 (2008)

https://doi.org/10.1063/1.2966297

Published: August 2008

View articletitled, Indentation size effects in single crystal copper as revealed by synchrotron x-ray microdiffraction

Journal Articles

Electromigration‐induced Plasticity and Texture in Cu Interconnects

A. S. Budiman, C. S. Hau‐Riege, P. R. Besser, A. Marathe, Y.‐C. Joo, N. Tamura, J. R. Patel, W. D. Nix

AIP Conf. Proc. 945, 56–65 (2007)

https://doi.org/10.1063/1.2815784

Published: October 2007

View articletitled, Electromigration‐induced Plasticity and Texture in Cu Interconnects

Journal Articles

Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

A. S. Budiman, W. D. Nix, N. Tamura, B. C. Valek, K. Gadre, J. Maiz, R. Spolenak, J. R. Patel

Appl. Phys. Lett. 88, 233515 (2006)

https://doi.org/10.1063/1.2210451

Published: June 2006

View articletitled, Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

Journal Articles

X‐Ray Microdiffraction as a Probe to Reveal Flux Divergences in Interconnects

R. Spolenak, N. Tamura, J. R. Patel

AIP Conf. Proc. 817, 288–295 (2006)

https://doi.org/10.1063/1.2173561

Published: February 2006

View articletitled, X‐Ray Microdiffraction as a Probe to Reveal Flux Divergences in Interconnects

Journal Articles

Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon

Y. Takamura, A. F. Marshall, A. Mehta, J. Arthur, P. B. Griffin, J. D. Plummer, J. R. Patel

J. Appl. Phys. 95, 3968–3976 (2004)

https://doi.org/10.1063/1.1666975

Published: April 2004

View articletitled, Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon

Journal Articles

Erratum: “X-ray analysis of temperature induced defect structures in boron implanted silicon” [J. Appl. Phys. 92 , 3694 (2002)]

M. Sztucki, T. H. Metzger, I. Kegel, A. Tilke, J. L. Rouvière, D. Lübbert, J. Arthur, J. R. Patel

J. Appl. Phys. 94, 7000 (2003)

https://doi.org/10.1063/1.1622119

Published: November 2003

View articletitled, Erratum: “X-ray analysis of temperature induced defect structures in boron implanted silicon” [J. Appl. Phys. 92 , 3694 (2002)]

Journal Articles

Erratum: “Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon” [Appl. Phys. Lett. 76 , 2698 (2000)]

U. Beck, T. H. Metzger, J. Peisl, J. R. Patel

Appl. Phys. Lett. 83, 2489 (2003)

https://doi.org/10.1063/1.1613803

Published: September 2003

View articletitled, Erratum: “Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon” [Appl. Phys. Lett. 76 , 2698 (2000)]

Journal Articles

Early stage of plastic deformation in thin films undergoing electromigration

B. C. Valek, N. Tamura, R. Spolenak, W. A. Caldwell, A. A. MacDowell, R. S. Celestre, H. A. Padmore, J. C. Bravman, B. W. Batterman, W. D. Nix, J. R. Patel

J. Appl. Phys. 94, 3757–3761 (2003)

https://doi.org/10.1063/1.1600843

Published: September 2003

View articletitled, Early stage of plastic deformation in thin films undergoing electromigration

Journal Articles

Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu ) interconnect

R. I. Barabash, G. E. Ice, N. Tamura, B. C. Valek, J. C. Bravman, R. Spolenak, J. R. Patel

J. Appl. Phys. 93, 5701–5706 (2003)

https://doi.org/10.1063/1.1563033

Published: May 2003

View articletitled, Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu ) interconnect

Journal Articles

Electromigration-induced plastic deformation in passivated metal lines

B. C. Valek, J. C. Bravman, N. Tamura, A. A. MacDowell, R. S. Celestre, H. A. Padmore, R. Spolenak, W. L. Brown, B. W. Batterman, J. R. Patel

Appl. Phys. Lett. 81, 4168–4170 (2002)

https://doi.org/10.1063/1.1525880

Published: November 2002

View articletitled, Electromigration-induced plastic deformation in passivated metal lines

Journal Articles

X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon

D. Luebbert, J. Arthur, M. Sztucki, T. H. Metzger, P. B. Griffin, J. R. Patel

Appl. Phys. Lett. 81, 3167–3169 (2002)

https://doi.org/10.1063/1.1516239

Published: October 2002

View articletitled, X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon

Journal Articles

X-ray analysis of temperature induced defect structures in boron implanted silicon

M. Sztucki, T. H. Metzger, I. Kegel, A. Tilke, J. L. Rouvière, D. Lübbert, J. Arthur, J. R. Patel

J. Appl. Phys. 92, 3694–3703 (2002)

https://doi.org/10.1063/1.1505982

Published: October 2002

View articletitled, X-ray analysis of temperature induced defect structures in boron implanted silicon

Journal Articles

High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

N. Tamura, A. A. MacDowell, R. S. Celestre, H. A. Padmore, B. Valek, J. C. Bravman, R. Spolenak, W. L. Brown, T. Marieb, H. Fujimoto, B. W. Batterman, J. R. Patel

Appl. Phys. Lett. 80, 3724–3726 (2002)

https://doi.org/10.1063/1.1477621

Published: May 2002

View articletitled, High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

Journal Articles

High resolution microdiffraction studies using synchrotron radiation

R. Spolenak, N. Tamura, B. C. Valek, A. A. MacDowell, R. S. Celestre, H. A. Padmore, W. L. Brown, T. Marieb, B. W. Batterman, J. R. Patel

AIP Conf. Proc. 612, 217–228 (2002)

https://doi.org/10.1063/1.1469906

Published: April 2002

View articletitled, High resolution microdiffraction studies using synchrotron radiation

Journal Articles

Submicron x-ray diffraction and its applications to problems in materials and environmental science

N. Tamura, R. S. Celestre, A. A. MacDowell, H. A. Padmore, R. Spolenak, B. C. Valek, N. Meier Chang, A. Manceau, J. R. Patel

Rev. Sci. Instrum. 73, 1369–1372 (2002)

https://doi.org/10.1063/1.1436539

Published: March 2002

View articletitled, Submicron x-ray diffraction and its applications to problems in materials and environmental science

Journal Articles

Grain orientation measurement of passivated aluminum interconnects by x-ray micro diffraction

Chang-Hwan Chang, B. C. Valek, H. A. Padmore, A. A. MacDowell, R. Celestre, T. Marieb, J. C. Bravman, Y. M. Koo, J. R. Patel

AIP Conf. Proc. 507, 284–287 (2000)

https://doi.org/10.1063/1.1291159

Published: May 2000

View articletitled, Grain orientation measurement of passivated aluminum interconnects by x-ray micro diffraction

Journal Articles

Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

U. Beck, T. H. Metzger, J. Peisl, J. R. Patel

Appl. Phys. Lett. 76, 2698–2700 (2000)

https://doi.org/10.1063/1.126447

Published: May 2000

View articletitled, Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

Journal Articles

Diffuse x-ray streaks from stacking faults in Si analyzed by atomistic simulations

K. Nordlund, U. Beck, T. H. Metzger, J. R. Patel

Appl. Phys. Lett. 76, 846–848 (2000)

https://doi.org/10.1063/1.125604

Published: February 2000

View articletitled, Diffuse x-ray streaks from stacking faults in Si analyzed by atomistic simulations

Journal Articles

Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

C. H. Chang, A. A. MacDowell, A. C. Thompson, H. A. Padmore, J. R. Patel

AIP Conf. Proc. 449, 424–426 (1998)

https://doi.org/10.1063/1.56826

Published: November 1998

View articletitled, Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

Journal Articles

Erratum: Arsenic and gallium atom location on silicon (111) [J. Vac. Sci. Technol. B 7 , 894 (1989)]

J. R. Patel, J. Zegenhagen, P. E. Freeland, M. S. Hybertsen, J. A. Golovchenko, D. M. Chen

J. Vac. Sci. Technol. B 8, 574 (1990)

https://doi.org/10.1116/1.585012

Published: May 1990

View articletitled, Erratum: Arsenic and gallium atom location on silicon (111) [J. Vac. Sci. Technol. B 7 , 894 (1989)]

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Indentation size effects in single crystal copper as revealed by synchrotron x-ray microdiffraction

Electromigration‐induced Plasticity and Texture in Cu Interconnects

Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

X‐Ray Microdiffraction as a Probe to Reveal Flux Divergences in Interconnects

Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon

Erratum: “X-ray analysis of temperature induced defect structures in boron implanted silicon” [J. Appl. Phys. 92 , 3694 (2002)]

Erratum: “Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon” [Appl. Phys. Lett. 76 , 2698 (2000)]

Early stage of plastic deformation in thin films undergoing electromigration

Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu ) interconnect

Electromigration-induced plastic deformation in passivated metal lines

X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon

X-ray analysis of temperature induced defect structures in boron implanted silicon

High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

High resolution microdiffraction studies using synchrotron radiation

Submicron x-ray diffraction and its applications to problems in materials and environmental science

Grain orientation measurement of passivated aluminum interconnects by x-ray micro diffraction

Diffuse x-ray rods and scattering from point defect clusters in ion implanted silicon

Diffuse x-ray streaks from stacking faults in Si analyzed by atomistic simulations

Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

Erratum: Arsenic and gallium atom location on silicon (111) [J. Vac. Sci. Technol. B 7 , 894 (1989)]

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