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J. P. Reithmaier
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Journal Articles

Diamagnetic coefficients and g-factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths

M. Burakowski, P. Mrowiński, M. Gawełczyk, J. P. Reithmaier, S. Höfling, G. Sęk
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 144301 (2022)
https://doi.org/10.1063/5.0101345
Published: October 2022
View articletitled, Diamagnetic coefficients and g-factors of InAs/InGaAlAs quantum dashes emitting at telecom wavelengths
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Journal Articles

InP-based single-photon sources operating at telecom C-band with increased extraction efficiency

A. Musiał, M. Mikulicz, P. Mrowiński, A. Zielińska, P. Sitarek, P. Wyborski, M. Kuniej, J. P. Reithmaier, G. Sęk, M. Benyoucef
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 221101 (2021)
https://doi.org/10.1063/5.0045997
Published: June 2021
View articletitled, InP-based single-photon sources operating at telecom C-band with increased extraction efficiency
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Journal Articles

On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers

V. Mikhelashvili, O. Eyal, I. Khanonkin, S. Banyoudeh, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 054501 (2018)
https://doi.org/10.1063/1.5037961
Published: August 2018
View articletitled, On the relationship between electrical and electro-optical characteristics of InAs/InP quantum dot lasers
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Journal Articles

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55  µ m

Ł. Dusanowski, M. Gawełczyk, J. Misiewicz, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 043103 (2018)
https://doi.org/10.1063/1.5030895
Published: July 2018
View articletitled, Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55  µ m
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Journal Articles

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sȩk
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 221901 (2018)
https://doi.org/10.1063/1.5027596
Published: May 2018
View articletitled, Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
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Journal Articles

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Ł. Dusanowski, P. Mrowiński, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 253106 (2017)
https://doi.org/10.1063/1.5005971
Published: December 2017
View articletitled, Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics
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Journal Articles

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

M. Pieczarka, M. Syperek, D. Biegańska, C. Gilfert, E. M. Pavelescu, J. P. Reithmaier, J. Misiewicz, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 221104 (2017)
https://doi.org/10.1063/1.4984747
Published: May 2017
View articletitled, Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
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Journal Articles

Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array

A. Becker, V. Sichkovskyi, M. Bjelica, A. Rippien, F. Schnabel, M. Kaiser, O. Eyal, B. Witzigmann, G. Eisenstein, J. P. Reithmaier
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 181103 (2017)
https://doi.org/10.1063/1.4982716
Published: May 2017
View articletitled, Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
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Journal Articles

Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots

I. Khanonkin, A. K. Mishra, O. Karni, V. Mikhelashvili, S. Banyoudeh, F. Schnabel, V. Sichkovskyi, J. P. Reithmaier, G. Eisenstein
Journal: AIP Advances
AIP Advances 7, 035122 (2017)
https://doi.org/10.1063/1.4979556
Published: March 2017
View articletitled, Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
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Journal Articles

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: AIP Advances
AIP Advances 7, 015117 (2017)
https://doi.org/10.1063/1.4975634
Published: January 2017
View articletitled, Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
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Includes: Supplementary data
Journal Articles

Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities

A. Kors, K. Fuchs, M. Yacob, J. P. Reithmaier, M. Benyoucef
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 031101 (2017)
https://doi.org/10.1063/1.4974207
Published: January 2017
View articletitled, Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
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Journal Articles

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

M. Syperek, Ł. Dusanowski, M. Gawełczyk, G. Sȩk, A. Somers, J. P. Reithmaier, S. Höfling, J. Misiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 193108 (2016)
https://doi.org/10.1063/1.4966997
Published: November 2016
View articletitled, Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
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Journal Articles

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

P. Mrowiński, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, J. P. Reithmaier, W. Urbańczyk, J. Misiewicz, P. Machnikowski, G. Sęk
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 074303 (2016)
https://doi.org/10.1063/1.4961044
Published: August 2016
View articletitled, Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment
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Journal Articles

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł. Dusanowski, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 163108 (2016)
https://doi.org/10.1063/1.4947448
Published: April 2016
View articletitled, Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K
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Journal Articles

Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm

P. Mrowiński, A. Musiał, A. Maryński, M. Syperek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 053114 (2015)
https://doi.org/10.1063/1.4907650
Published: February 2015
View articletitled, Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm
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Journal Articles

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

Ł. Dusanowski, M. Syperek, P. Mrowiński, W. Rudno-Rudziński, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 021909 (2014)
https://doi.org/10.1063/1.4890603
Published: July 2014
View articletitled, Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash
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Journal Articles

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

O. Karni, K. J. Kuchar, A. Capua, V. Mikhelashvili, G. Sęk, J. Misiewicz, V. Ivanov, J. P. Reithmaier, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 121104 (2014)
https://doi.org/10.1063/1.4869489
Published: March 2014
View articletitled, Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers
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Journal Articles

Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

M. Yacob, J. P. Reithmaier, M. Benyoucef
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 022113 (2014)
https://doi.org/10.1063/1.4861940
Published: January 2014
View articletitled, Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range
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Journal Articles

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm

Ł. Dusanowski, M. Syperek, W. Rudno-Rudziński, P. Mrowiński, G. Sȩk, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 253113 (2013)
https://doi.org/10.1063/1.4852736
Published: December 2013
View articletitled, Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm
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Journal Articles

Heterodyne pump probe measurements of nonlinear dynamics in an indium phosphide photonic crystal cavity

M. Heuck, S. Combrié, G. Lehoucq, S. Malaguti, G. Bellanca, S. Trillo, P. T. Kristensen, J. Mørk, J. P. Reithmaier, A. de Rossi
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 181120 (2013)
https://doi.org/10.1063/1.4828355
Published: November 2013
View articletitled, Heterodyne pump probe measurements of nonlinear dynamics in an indium phosphide photonic crystal cavity
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