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J. P. R. David
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Journal Articles

Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes

Y. Liu, X. Jin, H. Jung, S. Lee, F. Harun, J. S. Ng, S. Krishna, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 221107 (2024)
https://doi.org/10.1063/5.0228938
Published: November 2024
View article titled, Electroabsorption in InGaAs and GaAsSb <em>p-i-n</em> photodiodes
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Journal Articles

Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

T. J. Ronningen, S. H. Kodati, X. Jin, S. Lee, H. Jung, X. Tao, H. I. J. Lewis, M. Schwartz, N. Gajowski, P. Martyniuk, B. Guo, A. H. Jones, J. C. Campbell, C. Grein, J. P. R. David, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 131110 (2023)
https://doi.org/10.1063/5.0165800
Published: September 2023
View article titled, Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate
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Includes: Supplementary data
Journal Articles

High electric field characteristics of GaAsSb photodiodes on InP substrates

H. Jung, S. Lee, Y. Liu, X. Jin, J. P. R. David, S. Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 221102 (2023)
https://doi.org/10.1063/5.0154844
Published: June 2023
View article titled, High electric field characteristics of GaAsSb photodiodes on InP substrates
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Journal Articles

Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

R. Kudrawiec, J. Kopaczek, M. P. Polak, P. Scharoch, M. Gladysiewicz, J. Misiewicz, R. D. Richards, F. Bastiman, J. P. R. David
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 233508 (2014)
https://doi.org/10.1063/1.4904740
Published: December 2014
View article titled, Experimental and theoretical studies of band gap alignment in GaAs<sub>1−x</sub>Bi<sub>x</sub>/GaAs quantum wells
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Journal Articles

Demonstration of InAsBi photoresponse beyond 3.5 μm

I. C. Sandall, F. Bastiman, B. White, R. Richards, D. Mendes, J. P. R. David, C. H. Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 171109 (2014)
https://doi.org/10.1063/1.4873403
Published: April 2014
View article titled, Demonstration of InAsBi photoresponse beyond 3.5 <em>μ</em>m
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Journal Articles

Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes

S. L. Tan, W. M. Soong, J. E. Green, M. J. Steer, S. Zhang, L. J. J. Tan, J. S. Ng, I. P. Marko, S. J. Sweeney, A. R. Adams, J. Allam, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 102101 (2013)
https://doi.org/10.1063/1.4819846
Published: September 2013
View article titled, Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes
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Journal Articles

Effects of rapid thermal annealing on GaAs1-xBix alloys

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 012106 (2012)
https://doi.org/10.1063/1.4731784
Published: July 2012
View article titled, Effects of rapid thermal annealing on GaAs<sub>1-x</sub>Bi<sub>x</sub> alloys
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Journal Articles

The effect of Bi composition to the optical quality of GaAs1−xBix

A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 042107 (2011)
https://doi.org/10.1063/1.3617461
Published: July 2011
View article titled, The effect of Bi composition to the optical quality of GaAs<sub>1−x</sub>Bi<sub>x</sub>
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Journal Articles

Dark current mechanisms in quantum dot laser structures

N. F. Hasbullah, J. P. R. David, D. J. Mowbray
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 113111 (2011)
https://doi.org/10.1063/1.3596524
Published: June 2011
View article titled, Dark current mechanisms in quantum dot laser structures
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Journal Articles

Effect of Modulation p‐doping on the Optical Properties of Quantum Dot Laser Structure

N. F. Hasbullah, J. P. R. David, D. J. Mowbray
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1328, 136–138 (2011)
https://doi.org/10.1063/1.3573710
Published: March 2011
View article titled, Effect of Modulation p‐doping on the Optical Properties of Quantum Dot Laser Structure
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Journal Articles

Photoluminescence investigation of high quality GaAs 1 − x Bi x on GaAs

A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 122107 (2011)
https://doi.org/10.1063/1.3565244
Published: March 2011
View article titled, Photoluminescence investigation of high quality GaAs 1 − x Bi x on GaAs
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Journal Articles

Correlation between defect density and current leakage in In As ∕ Ga As quantum dot-in-well structures

A. M. Sanchez, R. Beanland, N. F. Hasbullah, M. Hopkinson, J. P. R. David
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 024502 (2009)
https://doi.org/10.1063/1.3168492
Published: July 2009
View article titled, Correlation between defect density and current leakage in In As ∕ Ga As quantum dot-in-well structures
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Journal Articles

Quantum dots in strained layers—preventing relaxation through the precipitate hardening effect

R. Beanland, J. P. R. David, A. M. Sanchez
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 123502 (2008)
https://doi.org/10.1063/1.3028270
Published: December 2008
View article titled, Quantum dots in strained layers—preventing relaxation through the precipitate hardening effect
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Journal Articles

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

A. R. J. Marshall, C. H. Tan, M. J. Steer, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 111107 (2008)
https://doi.org/10.1063/1.2980451
Published: September 2008
View article titled, Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
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Journal Articles

Modeling of avalanche multiplication and excess noise factor in In 0.52 Al 0.48 As avalanche photodiodes using a simple Monte Carlo model

S. C. Liew Tat Mun, C. H. Tan, Y. L. Goh, A. R. J. Marshall, J. P. R. David
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 013114 (2008)
https://doi.org/10.1063/1.2952003
Published: July 2008
View article titled, Modeling of avalanche multiplication and excess noise factor in In 0.52 Al 0.48 As avalanche photodiodes using a simple Monte Carlo model
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Journal Articles

Long wavelength bulk GaInNAs p − i − n photodiodes lattice matched to GaAs

J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 064506 (2007)
https://doi.org/10.1063/1.2709622
Published: March 2007
View article titled, Long wavelength bulk GaInNAs p − i − n photodiodes lattice matched to GaAs
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Journal Articles

Room-temperature 1.6 μ m light emission from In As ∕ Ga As quantum dots with a thin GaAsSb cap layer

H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, J. P. R. David
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 046104 (2006)
https://doi.org/10.1063/1.2173188
Published: February 2006
View article titled, Room-temperature 1.6 μ m light emission from In As ∕ Ga As quantum dots with a thin GaAsSb cap layer
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Journal Articles

Optical properties of AlGaN ∕ GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate

J. Bai, T. Wang, P. Comming, P. J. Parbrook, J. P. R. David, A. G. Cullis
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 023513 (2006)
https://doi.org/10.1063/1.2161941
Published: January 2006
View article titled, Optical properties of AlGaN ∕ GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate
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Journal Articles

Effect of strain relaxation and exciton localization on performance of 350 - nm   AlInGaN quaternary light-emitting diodes

T. Wang, G. Raviprakash, F. Ranalli, C. N. Harrison, J. Bai, J. P. R. David, P. J. Parbrook, J. P. Ao, Y. Ohno
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 083104 (2005)
https://doi.org/10.1063/1.1877816
Published: April 2005
View article titled, Effect of strain relaxation and exciton localization on performance of 350 - nm   AlInGaN quaternary light-emitting diodes
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Journal Articles

Enhanced optical and structural properties of 1.3 μ m   Ga In N As ∕ Ga As multiple quantum-well heterostructures with stepped strain-mediating layers

H. Y. Liu, W. M. Soong, P. Navaretti, M. Hopkinson, J. P. R. David
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 062107 (2005)
https://doi.org/10.1063/1.1862784
Published: February 2005
View article titled, Enhanced optical and structural properties of 1.3 μ m   Ga In N As ∕ Ga As multiple quantum-well heterostructures with stepped strain-mediating layers
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