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Journal Articles

Structure of Sc 2 O 3 films epitaxially grown on α - Al 2 O 3 (0001)

A. R. Kortan, N. Kopylov, J. Kwo, M. Hong, C. P. Chen, J. P. Mannaerts, S. H. Liou

Appl. Phys. Lett. 88, 021906 (2006)

https://doi.org/10.1063/1.2163989

Published: January 2006

View article titled, Structure of Sc 2 O 3 films epitaxially grown on α - Al 2 O 3 (0001)

Journal Articles

High-quality thin single-crystal γ - Al 2 O 3 films grown on Si (111)

S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. C. Lee, Y. L. Huang

Appl. Phys. Lett. 87, 091908 (2005)

https://doi.org/10.1063/1.2037205

Published: August 2005

View article titled, High-quality thin single-crystal γ - Al 2 O 3 films grown on Si (111)

Journal Articles

Thermodynamic stability of Ga 2 O 3 ( Gd 2 O 3 ) ∕ Ga As interface

Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, M. Hong

Appl. Phys. Lett. 86, 191905 (2005)

https://doi.org/10.1063/1.1923172

Published: May 2005

View article titled, Thermodynamic stability of Ga 2 O 3 ( Gd 2 O 3 ) ∕ Ga As interface

Journal Articles

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, J. Bude

Appl. Phys. Lett. 83, 180–182 (2003)

https://doi.org/10.1063/1.1590743

Published: July 2003

View article titled, GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Journal Articles

Optical properties of gallium oxide thin films

M. Rebien, W. Henrion, M. Hong, J. P. Mannaerts, M. Fleischer

Appl. Phys. Lett. 81, 250–252 (2002)

https://doi.org/10.1063/1.1491613

Published: July 2002

View article titled, Optical properties of gallium oxide thin films

Journal Articles

Single-crystal GaN/Gd₂O₃/GaN heterostructure

M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

J. Vac. Sci. Technol. B 20, 1274–1277 (2002)

https://doi.org/10.1116/1.1473178

Published: June 2002

View article titled, Single-crystal GaN/Gd<sub>2</sub>O<sub>3</sub>/GaN heterostructure

Journal Articles

Interface reactions of high-κ Y 2 O 3 gate oxides with Si

B. W. Busch, J. Kwo, M. Hong, J. P. Mannaerts, B. J. Sapjeta, W. H. Schulte, E. Garfunkel, T. Gustafsson

Appl. Phys. Lett. 79, 2447–2449 (2001)

https://doi.org/10.1063/1.1406989

Published: October 2001

View article titled, Interface reactions of high-κ Y 2 O 3 gate oxides with Si

Journal Articles

New phase formation of Gd 2 O 3 films on GaAs(100)

A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, J. J. Krajewski, N. Kopylov, C. Steiner, B. Bolliger, M. Erbudak

J. Vac. Sci. Technol. B 19, 1434–1438 (2001)

https://doi.org/10.1116/1.1387456

Published: July 2001

View article titled, New phase formation of Gd 2 O 3 films on GaAs(100)

Journal Articles

Properties of high κ gate dielectrics Gd 2 O 3 and Y 2 O 3 for Si

J. Kwo, M. Hong, A. R. Kortan, K. L. Queeney, Y. J. Chabal, R. L. Opila, Jr., D. A. Muller, S. N. G. Chu, B. J. Sapjeta, T. S. Lay, J. P. Mannaerts, T. Boone, H. W. Krautter, J. J. Krajewski, A. M. Sergnt, J. M. Rosamilia

J. Appl. Phys. 89, 3920–3927 (2001)

https://doi.org/10.1063/1.1352688

Published: April 2001

View article titled, Properties of high κ gate dielectrics Gd 2 O 3 and Y 2 O 3 for Si

Journal Articles

High ε gate dielectrics Gd 2 O 3 and Y 2 O 3 for silicon

J. Kwo, M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, J. M. Rosamilia

Appl. Phys. Lett. 77, 130–132 (2000)

https://doi.org/10.1063/1.126899

Published: July 2000

View article titled, High ε gate dielectrics Gd 2 O 3 and Y 2 O 3 for silicon

Journal Articles

Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

J. Vac. Sci. Technol. B 18, 1453–1456 (2000)

https://doi.org/10.1116/1.591402

Published: May 2000

View article titled, Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

Journal Articles

Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd 2 O 3 on GaAs(001)

E. J. Nelson, J. C. Woicik, M. Hong, J. Kwo, J. P. Mannaerts

Appl. Phys. Lett. 76, 2526–2528 (2000)

https://doi.org/10.1063/1.126397

Published: May 2000

View article titled, Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd 2 O 3 on GaAs(001)

Journal Articles

Characteristics of Ga 2 O 3 ( Gd 2 O 3 )/ GaAs interface: Structures and compositions

M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, J. J. Krajewski, Z. H. Lu, K. C. Hsieh, K. Y. Cheng

J. Vac. Sci. Technol. B 18, 1688–1691 (2000)

https://doi.org/10.1116/1.591453

Published: May 2000

View article titled, Characteristics of Ga 2 O 3 ( Gd 2 O 3 )/ GaAs interface: Structures and compositions

Journal Articles

Initial growth of Ga 2 O 3 (Gd 2 O 3 ) on GaAs: Key to the attainment of a low interfacial density of states

M. Hong, Z. H. Lu, J. Kwo, A. R. Kortan, J. P. Mannaerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, K. Y. Cheng

Appl. Phys. Lett. 76, 312–314 (2000)

https://doi.org/10.1063/1.125730

Published: January 2000

View article titled, Initial growth of Ga 2 O 3 (Gd 2 O 3 ) on GaAs: Key to the attainment of a low interfacial density of states

Journal Articles

Passivation of GaAs using ( Ga 2 O 3 ) 1−x ( Gd 2 O 3 ) x , 0⩽x⩽1.0 films

J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, R. L. Masaitis

Appl. Phys. Lett. 75, 1116–1118 (1999)

https://doi.org/10.1063/1.124614

Published: August 1999

View article titled, Passivation of GaAs using ( Ga 2 O 3 ) 1−x ( Gd 2 O 3 ) x , 0⩽x⩽1.0 films

Journal Articles

Passivation of GaAs using gallium-gadolinium oxides

J. Kwo, D. W. Murphy, M. Hong, J. P. Mannaerts, R. L. Opila, R. L. Masaitis, A. M. Sergent

J. Vac. Sci. Technol. B 17, 1294–1296 (1999)

https://doi.org/10.1116/1.590743

Published: May 1999

View article titled, Passivation of GaAs using gallium-gadolinium oxides

Journal Articles

Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga 2 O 3 (Gd 2 O 3 ) as the gate oxide

M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, Y. K. Chen

J. Vac. Sci. Technol. B 16, 1398–1400 (1998)

https://doi.org/10.1116/1.590083

Published: May 1998

View article titled, Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga 2 O 3 (Gd 2 O 3 ) as the gate oxide

Journal Articles

Structural properties of Ga 2 O 3 (Gd 2 O 3 )–GaAs interfaces

M. Hong, M. A. Marcus, J. Kwo, J. P. Mannaerts, A. M. Sergent, L. J. Chou, K. C. Hsieh, K. Y. Cheng

J. Vac. Sci. Technol. B 16, 1395–1397 (1998)

https://doi.org/10.1116/1.590082

Published: May 1998

View article titled, Structural properties of Ga 2 O 3 (Gd 2 O 3 )–GaAs interfaces

Journal Articles

Oxide–GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance

J. S. Hwang, Y. C. Wang, W. Y. Chou, S. L. Tyan, M. Hong, J. P. Mannaerts, J. Kwo

J. Appl. Phys. 83, 2857–2859 (1998)

https://doi.org/10.1063/1.367047

Published: March 1998

View article titled, Oxide–GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance

Journal Articles

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

M. Passlack, M. Hong, E. F. Schubert, G. J. Zydzik, J. P. Mannaerts, W. S. Hobson, T. D. Harris

J. Appl. Phys. 81, 7647–7661 (1997)

https://doi.org/10.1063/1.365343

Published: June 1997

View article titled, Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

NARROW

Topics

Structure of Sc 2 O 3 films epitaxially grown on α - Al 2 O 3 (0001)

High-quality thin single-crystal γ - Al 2 O 3 films grown on Si (111)

Thermodynamic stability of Ga 2 O 3 ( Gd 2 O 3 ) ∕ Ga As interface

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Optical properties of gallium oxide thin films

Single-crystal GaN/Gd₂O₃/GaN heterostructure

Interface reactions of high-κ Y 2 O 3 gate oxides with Si

New phase formation of Gd 2 O 3 films on GaAs(100)

Properties of high κ gate dielectrics Gd 2 O 3 and Y 2 O 3 for Si

High ε gate dielectrics Gd 2 O 3 and Y 2 O 3 for silicon

Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd 2 O 3 on GaAs(001)

Characteristics of Ga 2 O 3 ( Gd 2 O 3 )/ GaAs interface: Structures and compositions

Initial growth of Ga 2 O 3 (Gd 2 O 3 ) on GaAs: Key to the attainment of a low interfacial density of states

Passivation of GaAs using ( Ga 2 O 3 ) 1−x ( Gd 2 O 3 ) x , 0⩽x⩽1.0 films

Passivation of GaAs using gallium-gadolinium oxides

Depletion mode GaAs metal–oxide–semiconductor field effect transistors with Ga 2 O 3 (Gd 2 O 3 ) as the gate oxide

Structural properties of Ga 2 O 3 (Gd 2 O 3 )–GaAs interfaces

Oxide–GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance

Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions

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