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Journal Articles

Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, J.-P. Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. V. Korotyeyev, V. A. Kochelap

Appl. Phys. Lett. 99, 082101 (2011)

https://doi.org/10.1063/1.3627183

Published: August 2011

View article titled, Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Journal Articles

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schühle, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart

J. Appl. Phys. 95, 8275–8279 (2004)

https://doi.org/10.1063/1.1748855

Published: June 2004

View article titled, Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal Articles

Electrical and optical proprieties of photodiodes based on ZnSe material

A. Bouhdada, M. Hanzaz, F. Vigué, J. P. Faurie

Appl. Phys. Lett. 83, 171–173 (2003)

https://doi.org/10.1063/1.1589191

Published: July 2003

View article titled, Electrical and optical proprieties of photodiodes based on ZnSe material

Journal Articles

Raman study of Zn 1−x Be x Se/GaAs systems with low Be content (x⩽0.20)

O. Pagès, M. Ajjoun, D. Bormann, C. Chauvet, E. Tournié, J. P. Faurie, O. Gorochov

J. Appl. Phys. 91, 9187–9197 (2002)

https://doi.org/10.1063/1.1471927

Published: June 2002

View article titled, Raman study of Zn 1−x Be x Se/GaAs systems with low Be content (x⩽0.20)

Journal Articles

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J.-P. Faurie

J. Appl. Phys. 90, 5115–5119 (2001)

https://doi.org/10.1063/1.1412572

Published: November 2001

View article titled, Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Journal Articles

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

F. Vigué, P. Vennéguès, S. Vézian, M. Laügt, J.-P. Faurie

Appl. Phys. Lett. 79, 194–196 (2001)

https://doi.org/10.1063/1.1384907

Published: July 2001

View article titled, Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Journal Articles

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, E. Muñoz

Appl. Phys. Lett. 78, 4190–4192 (2001)

https://doi.org/10.1063/1.1381415

Published: June 2001

View article titled, Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Journal Articles

Time response analysis of ZnSe-based Schottky barrier photodetectors

E. Monroy, F. Vigué, F. Calle, J. I. Izpura, E. Muñoz, J.-P. Faurie

Appl. Phys. Lett. 77, 2761–2763 (2000)

https://doi.org/10.1063/1.1320038

Published: October 2000

View article titled, Time response analysis of ZnSe-based Schottky barrier photodetectors

Journal Articles

Raman study of Zn x Be 1−x Se alloy (100) epitaxial layers

O. Pagès, M. Ajjoun, J. P. Laurenti, D. Bormann, C. Chauvet, E. Tournié, J. P. Faurie

Appl. Phys. Lett. 77, 519–521 (2000)

https://doi.org/10.1063/1.127030

Published: July 2000

View article titled, Raman study of Zn x Be 1−x Se alloy (100) epitaxial layers

Journal Articles

Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

C. Guénaud, E. Deleporte, A. Filoramo, Ph. Lelong, C. Delalande, C. Morhain, E. Tournié, J. P. Faurie

J. Appl. Phys. 87, 1863–1868 (2000)

https://doi.org/10.1063/1.372105

Published: February 2000

View article titled, Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

Journal Articles

Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Y. Xin, E. M. James, I. Arslan, S. Sivananthan, N. D. Browning, S. J. Pennycook, F. Omnès, B. Beaumont, J-P. Faurie, P. Gibart

Appl. Phys. Lett. 76, 466–468 (2000)

https://doi.org/10.1063/1.125789

Published: January 2000

View article titled, Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Journal Articles

Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

F. Vigué, E. Tournié, J.-P. Faurie

Appl. Phys. Lett. 76, 242–244 (2000)

https://doi.org/10.1063/1.125715

Published: January 2000

View article titled, Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Journal Articles

Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

F. Vigué, P. Brunet, P. Lorenzini, E. Tournié, J. P. Faurie

Appl. Phys. Lett. 75, 3345–3347 (1999)

https://doi.org/10.1063/1.125346

Published: November 1999

View article titled, Ohmic contacts to <em>p</em>-type ZnSe using a ZnSe/BeTe superlattice

Journal Articles

Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe

H. Pelletier, B. Theys, A. Lusson, E. Tournié, J. Chevallier, Y. Marfaing, J. P. Faurie

J. Appl. Phys. 86, 1393–1397 (1999)

https://doi.org/10.1063/1.370900

Published: August 1999

View article titled, Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe

Journal Articles

p-type doping of Zn(Mg)BeSe epitaxial layers

E. Tournié, J.-P. Faurie

Appl. Phys. Lett. 75, 382–384 (1999)

https://doi.org/10.1063/1.124382

Published: July 1999

View article titled, <em>p</em>-type doping of Zn(Mg)BeSe epitaxial layers

Journal Articles

Evidence of N-related compensating donors in lightly doped ZnSe:N

E. Tournié, P. Brunet, J.-P. Faurie

Appl. Phys. Lett. 74, 2200–2202 (1999)

https://doi.org/10.1063/1.123800

Published: April 1999

View article titled, Evidence of N-related compensating donors in lightly doped ZnSe:N

Journal Articles

Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

C. Chauvet, P. Venneguès, P. Brunet, E. Tournié, J. P. Faurie

Appl. Phys. Lett. 73, 957–959 (1998)

https://doi.org/10.1063/1.122051

Published: August 1998

View article titled, Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

Journal Articles

Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

E. Tournié, V. Bousquet, J.-P. Faurie

Appl. Phys. Lett. 72, 2859–2861 (1998)

https://doi.org/10.1063/1.121482

Published: June 1998

View article titled, Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

Journal Articles

Direct observation of the core structures of threading dislocations in GaN

Y. Xin, S. J. Pennycook, N. D. Browning, P. D. Nellist, S. Sivananthan, F. Omnès, B. Beaumont, J. P. Faurie, P. Gibart

Appl. Phys. Lett. 72, 2680–2682 (1998)

https://doi.org/10.1063/1.121097

Published: May 1998

View article titled, Direct observation of the core structures of threading dislocations in GaN

Journal Articles

Critical thickness of Zn 1−x Cd x Se/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates

E. Tournié, C. Ongaretto, M. Laügt, J.-P. Faurie

Appl. Phys. Lett. 72, 217–219 (1998)

https://doi.org/10.1063/1.120690

Published: January 1998

View article titled, Critical thickness of Zn 1−x Cd x Se/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates

NARROW

Topics

Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Electrical and optical proprieties of photodiodes based on ZnSe material

Raman study of Zn 1−x Be x Se/GaAs systems with low Be content (x⩽0.20)

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Time response analysis of ZnSe-based Schottky barrier photodetectors

Raman study of Zn x Be 1−x Se alloy (100) epitaxial layers

Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy

Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe

p-type doping of Zn(Mg)BeSe epitaxial layers

Evidence of N-related compensating donors in lightly doped ZnSe:N

Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

Molecular-beam epitaxy of BeTe layers on GaAs substrates studied via reflection high-energy electron diffraction

Direct observation of the core structures of threading dislocations in GaN

Critical thickness of Zn 1−x Cd x Se/ZnSe heterostructures grown on relaxed ZnSe buffer layers on bare GaAs substrates

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