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J. O. Chu
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Journal Articles

In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers

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K. L. Saenger, J. C. Tsang, A. A. Bol, J. O. Chu, A. Grill, C. Lavoie
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 153105 (2010)
https://doi.org/10.1063/1.3397985
Published: April 2010
View articletitled, In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers
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Journal Articles

Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires

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M. J. Rooks, G. M. Cohen, J. O. Chu, P. M. Solomon, J. A. Ott, R. J. Miller, R. Viswanathan, W. Haensch
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 2572–2576 (2007)
https://doi.org/10.1116/1.2798738
Published: December 2007
View articletitled, Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
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Journal Articles

Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

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G. M. Cohen, M. J. Rooks, J. O. Chu, S. E. Laux, P. M. Solomon, J. A. Ott, R. J. Miller, W. Haensch
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 233110 (2007)
https://doi.org/10.1063/1.2746946
Published: June 2007
View articletitled, Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
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Journal Articles

Doping of germanium nanowires grown in presence of PH 3

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E. Tutuc, J. O. Chu, J. A. Ott, S. Guha
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 263101 (2006)
https://doi.org/10.1063/1.2410238
Published: December 2006
View articletitled, Doping of germanium nanowires grown in presence of PH 3
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Journal Articles

Morphology of germanium nanowires grown in presence of B 2 H 6

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E. Tutuc, S. Guha, J. O. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 043113 (2006)
https://doi.org/10.1063/1.2165089
Published: January 2006
View articletitled, Morphology of germanium nanowires grown in presence of B 2 H 6
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Journal Articles

Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas

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L. J. Klein, K. L. M. Lewis, K. A. Slinker, Srijit Goswami, D. W. van der Weide, R. H. Blick, P. M. Mooney, J. O. Chu, S. N. Coppersmith, Mark Friesen, M. A. Eriksson
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 023509 (2006)
https://doi.org/10.1063/1.2159074
Published: January 2006
View articletitled, Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas
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Journal Articles

Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot

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L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charlie Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 4047–4049 (2004)
https://doi.org/10.1063/1.1751612
Published: May 2004
View articletitled, Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot
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Journal Articles

Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1−x Ge x / Si (100) heterostructures

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J. Cai, P. M. Mooney, S. H. Christiansen, H. Chen, J. O. Chu, J. A. Ott
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 5347–5351 (2004)
https://doi.org/10.1063/1.1699488
Published: May 2004
View articletitled, Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1−x Ge x / Si (100) heterostructures
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Journal Articles

Elastic strain relaxation in free-standing SiGe/Si structures

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P. M. Mooney, G. M. Cohen, J. O. Chu, C. E. Murray
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 1093–1095 (2004)
https://doi.org/10.1063/1.1646464
Published: February 2004
View articletitled, Elastic strain relaxation in free-standing SiGe/Si structures
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Journal Articles

Characterization of Si/SiGe Heterostructures for Strained Si CMOS

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P. M. Mooney, S. J. Koester, H. J. Hovel, J. O. Chu, K. K. Chan, J. L. Jordan‐Sweet, J. A. Ott, N. Klymco, D. M. Mocuta
Journal: AIP Conference Proceedings
AIP Conf. Proc. 683, 213–222 (2003)
https://doi.org/10.1063/1.1622474
Published: September 2003
View articletitled, Characterization of Si/SiGe Heterostructures for Strained Si CMOS
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Journal Articles

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

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D. B. Aubertine, M. A. Mander, N. Ozguven, A. F. Marshall, P. C. McIntyre, J. O. Chu, P. M. Mooney
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 5027–5035 (2002)
https://doi.org/10.1063/1.1508424
Published: November 2002
View articletitled, Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
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Journal Articles

Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact

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U. Wieser, U. Kunze, K. Ismail, J. O. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1726–1728 (2002)
https://doi.org/10.1063/1.1503157
Published: August 2002
View articletitled, Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact
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Journal Articles

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

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S. J. Koester, K. Rim, J. O. Chu, P. M. Mooney, J. A. Ott, M. A. Hargrove
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 2148–2150 (2001)
https://doi.org/10.1063/1.1405151
Published: October 2001
View articletitled, Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
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Journal Articles

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

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L. J. Huang, J. O. Chu, D. F. Canaperi, C. P. D’Emic, R. M. Anderson, S. J. Koester, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 1267–1269 (2001)
https://doi.org/10.1063/1.1342212
Published: February 2001
View articletitled, SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
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Journal Articles

X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates

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P. M. Mooney, J. A. Ott, J. O. Chu, J. L. Jordan-Sweet
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 924–926 (1998)
https://doi.org/10.1063/1.122039
Published: August 1998
View articletitled, X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
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Journal Articles

New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates

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S. A. Rishton, K. Ismail, J. O. Chu, K. K. Chan, K. Y. Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 2795–2798 (1997)
https://doi.org/10.1116/1.589730
Published: November 1997
View articletitled, New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
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Journal Articles

Negative differential conductance in strained Si point contacts and wires

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S. J. Koester, K. Ismail, K. Y. Lee, J. O. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 1528–1530 (1997)
https://doi.org/10.1063/1.119956
Published: September 1997
View articletitled, Negative differential conductance in strained Si point contacts and wires
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Journal Articles

Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si

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Kai Shum, P. M. Mooney, J. O. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 1074–1076 (1997)
https://doi.org/10.1063/1.119732
Published: August 1997
View articletitled, Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si
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Journal Articles

Defect states in strain-relaxed Si 0.7 Ge 0.3 layers grown at low temperature

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P. M. Mooney, L. Tilly, C. P. D’Emic, J. O. Chu, F. Cardone, F. K. LeGoues, B. S. Meyerson
Journal: Journal of Applied Physics
J. Appl. Phys. 82, 688–695 (1997)
https://doi.org/10.1063/1.365599
Published: July 1997
View articletitled, Defect states in strain-relaxed Si 0.7 Ge 0.3 layers grown at low temperature
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Journal Articles

Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells

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S. J. Koester, K. Ismail, K. Y. Lee, J. O. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 2422–2424 (1997)
https://doi.org/10.1063/1.118891
Published: May 1997
View articletitled, Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
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