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J. Misiewicz
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Journal Articles

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55  µ m

Ł. Dusanowski, M. Gawełczyk, J. Misiewicz, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 043103 (2018)
https://doi.org/10.1063/1.5030895
Published: July 2018
View articletitled, Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55  µ m
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Journal Articles

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

M. Syperek, J. Andrzejewski, E. Rogowicz, J. Misiewicz, S. Bauer, V. I. Sichkovskyi, J. P. Reithmaier, G. Sȩk
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 221901 (2018)
https://doi.org/10.1063/1.5027596
Published: May 2018
View articletitled, Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
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Journal Articles

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

W. Rudno-Rudziński, D. Biegańska, J. Misiewicz, F. Lelarge, B. Rousseau, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 051103 (2018)
https://doi.org/10.1063/1.5016436
Published: January 2018
View articletitled, Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range
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Includes: Supplementary data
Journal Articles

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Ł. Dusanowski, P. Mrowiński, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 253106 (2017)
https://doi.org/10.1063/1.5005971
Published: December 2017
View articletitled, Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics
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Journal Articles

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

M. Pieczarka, M. Syperek, D. Biegańska, C. Gilfert, E. M. Pavelescu, J. P. Reithmaier, J. Misiewicz, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 221104 (2017)
https://doi.org/10.1063/1.4984747
Published: May 2017
View articletitled, Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
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Journal Articles

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: AIP Advances
AIP Advances 7, 015117 (2017)
https://doi.org/10.1063/1.4975634
Published: January 2017
View articletitled, Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
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Includes: Supplementary data
Journal Articles

Optimizing the active region of interband cascade lasers for passive mode-locking

K. Ryczko, J. Misiewicz, S. Höfling, M. Kamp, G. Sek
Journal: AIP Advances
AIP Advances 7, 015015 (2017)
https://doi.org/10.1063/1.4973937
Published: January 2017
View articletitled, Optimizing the active region of interband cascade lasers for passive mode-locking
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Journal Articles

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

M. Syperek, Ł. Dusanowski, M. Gawełczyk, G. Sȩk, A. Somers, J. P. Reithmaier, S. Höfling, J. Misiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 193108 (2016)
https://doi.org/10.1063/1.4966997
Published: November 2016
View articletitled, Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
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Journal Articles

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

P. Mrowiński, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, J. P. Reithmaier, W. Urbańczyk, J. Misiewicz, P. Machnikowski, G. Sęk
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 074303 (2016)
https://doi.org/10.1063/1.4961044
Published: August 2016
View articletitled, Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment
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Journal Articles

Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures

M. Dyksik, M. Motyka, G. Sęk, J. Misiewicz, M. Dallner, S. Höfling, M. Kamp
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 043104 (2016)
https://doi.org/10.1063/1.4958904
Published: July 2016
View articletitled, Influence of carrier concentration on properties of InAs waveguide layers in interband cascade laser structures
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Journal Articles

Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

F. Dybała, K. Żelazna, H. Maczko, M. Gladysiewicz, J. Misiewicz, R. Kudrawiec, H. Lin, R. Chen, C. Shang, Y. Huo, T. I. Kamins, J. S. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 215703 (2016)
https://doi.org/10.1063/1.4953220
Published: June 2016
View articletitled, Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain
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Journal Articles

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł. Dusanowski, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 163108 (2016)
https://doi.org/10.1063/1.4947448
Published: April 2016
View articletitled, Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K
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Journal Articles

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

M. Motyka, M. Dyksik, K. Ryczko, R. Weih, M. Dallner, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 101905 (2016)
https://doi.org/10.1063/1.4943193
Published: March 2016
View articletitled, Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
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Journal Articles

Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films

G. Zatryb, M. M. Klak, J. Wojcik, J. Misiewicz, P. Mascher, A. Podhorodecki
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 243104 (2015)
https://doi.org/10.1063/1.4939199
Published: December 2015
View articletitled, Effect of hydrogen passivation on the photoluminescence of Tb ions in silicon rich silicon oxide films
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Journal Articles

Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

M. Baranowski, J. Misiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 155705 (2015)
https://doi.org/10.1063/1.4933385
Published: October 2015
View articletitled, Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers
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Journal Articles

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

Ł. Dusanowski, M. Syperek, A. Maryński, L. H. Li, J. Misiewicz, S. Höfling, M. Kamp, A. Fiore, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 233107 (2015)
https://doi.org/10.1063/1.4922455
Published: June 2015
View articletitled, Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures
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Journal Articles

Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys

M. Baranowski, R. Kudrawiec, A. V. Luce, M. Latkowska, K. M. Yu, Y. J. Kuang (邝彦瑾), J. Misiewicz, C. W. Tu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 175702 (2015)
https://doi.org/10.1063/1.4919751
Published: May 2015
View articletitled, Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys
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Journal Articles

Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

K. Zelazna, M. P. Polak, P. Scharoch, J. Serafinczuk, M. Gladysiewicz, J. Misiewicz, J. Dekoster, R. Kudrawiec
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 142102 (2015)
https://doi.org/10.1063/1.4917236
Published: April 2015
View articletitled, Electronic band structure of compressively strained Ge1−xSnx with x &lt; 0.11 studied by contactless electroreflectance
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Journal Articles

On the modified active region design of interband cascade lasers

M. Motyka, K. Ryczko, M. Dyksik, G. Sęk, J. Misiewicz, R. Weih, M. Dallner, S. Höfling, M. Kamp
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 084312 (2015)
https://doi.org/10.1063/1.4913391
Published: February 2015
View articletitled, On the modified active region design of interband cascade lasers
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Journal Articles

Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm

P. Mrowiński, A. Musiał, A. Maryński, M. Syperek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 053114 (2015)
https://doi.org/10.1063/1.4907650
Published: February 2015
View articletitled, Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm
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