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Journal Articles

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.-H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil

J. Appl. Phys. 126, 205701 (2019)

https://doi.org/10.1063/1.5115593

Published: November 2019

View article titled, Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal Articles

Influence of the heterostructure design on the optical properties of GaN and Al_0.1Ga_0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T. H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil

J. Appl. Phys. 122, 085706 (2017)

https://doi.org/10.1063/1.5000238

Published: August 2017

View article titled, Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Journal Articles

Formation of GaN quantum dots by molecular beam epitaxy using NH₃ as nitrogen source

B. Damilano, J. Brault, J. Massies

J. Appl. Phys. 118, 024304 (2015)

https://doi.org/10.1063/1.4923425

Published: July 2015

View article titled, Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Journal Articles

Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped Al_xGa_1−xN films using infrared spectroscopy

N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, J. Massies

J. Appl. Phys. 114, 053505 (2013)

https://doi.org/10.1063/1.4817172

Published: August 2013

View article titled, Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy

Journal Articles

Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

D. H. Rich, O. Moshe, B. Damilano, J. Massies

AIP Conf. Proc. 1399, 453–454 (2011)

https://doi.org/10.1063/1.3666449

Published: December 2011

View article titled, Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

Journal Articles

GaN/Al_0.5Ga_0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

A. Kahouli, N. Kriouche, J. Brault, B. Damilano, P. Vennéguès, P. de Mierry, M. Leroux, A. Courville, O. Tottereau, J. Massies

J. Appl. Phys. 110, 084318 (2011)

https://doi.org/10.1063/1.3654053

Published: October 2011

View article titled, GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

Journal Articles

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

S. Sergent, B. Damilano, T. Huault, J. Brault, M. Korytov, O. Tottereau, P. Vennéguès, M. Leroux, F. Semond, J. Massies

J. Appl. Phys. 109, 053514 (2011)

https://doi.org/10.1063/1.3552296

Published: March 2011

View article titled, Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Journal Articles

Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D. H. Rich, B. Damilano, J. Massies

Appl. Phys. Lett. 98, 061903 (2011)

https://doi.org/10.1063/1.3554371

Published: February 2011

View article titled, Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

Journal Articles

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, J. Massies

J. Appl. Phys. 108, 083510 (2010)

https://doi.org/10.1063/1.3490199

Published: October 2010

View article titled, Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

Journal Articles

Blue-green and white color tuning of monolithic light emitting diodes

B. Damilano, P. Demolon, J. Brault, T. Huault, F. Natali, J. Massies

J. Appl. Phys. 108, 073115 (2010)

https://doi.org/10.1063/1.3490895

Published: October 2010

View article titled, Blue-green and white color tuning of monolithic light emitting diodes

Journal Articles

External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

M. Montes, A. Hierro, J. M. Ulloa, A. Guzmán, M. Al Khalfioui, M. Hugues, B. Damilano, J. Massies

J. Appl. Phys. 108, 033104 (2010)

https://doi.org/10.1063/1.3467004

Published: August 2010

View article titled, External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

Journal Articles

Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

O. Moshe, D. H. Rich, B. Damilano, J. Massies

J. Vac. Sci. Technol. B 28, C5E25–C5E34 (2010)

https://doi.org/10.1116/1.3435325

Published: July 2010

View article titled, Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

Journal Articles

Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

M. Carras, G. Maisons, B. Simozrag, M. Garcia, O. Parillaud, J. Massies, X. Marcadet

Appl. Phys. Lett. 96, 161105 (2010)

https://doi.org/10.1063/1.3399779

Published: April 2010

View article titled, Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

Journal Articles

Tailoring the shape of GaN / Al x Ga 1 − x N nanostructures to extend their luminescence in the visible range

J. Brault, T. Huault, F. Natali, B. Damilano, D. Lefebvre, M. Leroux, M. Korytov, J. Massies

J. Appl. Phys. 105, 033519 (2009)

https://doi.org/10.1063/1.3075899

Published: February 2009

View article titled, Tailoring the shape of GaN / Al x Ga 1 − x N nanostructures to extend their luminescence in the visible range

Journal Articles

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

N. Baron, Y. Cordier, S. Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Semond, J. Massies

J. Appl. Phys. 105, 033701 (2009)

https://doi.org/10.1063/1.3063698

Published: February 2009

View article titled, The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Journal Articles

Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

B. Damilano, A. Dussaigne, J. Brault, T. Huault, F. Natali, P. Demolon, P. De Mierry, S. Chenot, J. Massies

Appl. Phys. Lett. 93, 101117 (2008)

https://doi.org/10.1063/1.2982097

Published: September 2008

View article titled, Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Journal Articles

Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

S. Pezzagna, J. Brault, M. Leroux, J. Massies, M. de Micheli

J. Appl. Phys. 103, 123112 (2008)

https://doi.org/10.1063/1.2947598

Published: June 2008

View article titled, Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

Journal Articles

Layer-by-layer epitaxial growth of Mg on GaN(0001)

S. Pezzagna, S. Vézian, J. Brault, J. Massies

Appl. Phys. Lett. 92, 233111 (2008)

https://doi.org/10.1063/1.2943323

Published: June 2008

View article titled, Layer-by-layer epitaxial growth of Mg on GaN(0001)

Journal Articles

Blue-light emission from GaN ∕ Al 0.5 Ga 0.5 N quantum dots

T. Huault, J. Brault, F. Natali, B. Damilano, D. Lefebvre, L. Nguyen, M. Leroux, J. Massies

Appl. Phys. Lett. 92, 051911 (2008)

https://doi.org/10.1063/1.2841825

Published: February 2008

View article titled, Blue-light emission from GaN ∕ Al 0.5 Ga 0.5 N quantum dots

Journal Articles

Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I. R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli

Appl. Phys. Lett. 92, 042119 (2008)

https://doi.org/10.1063/1.2839380

Published: January 2008

View article titled, Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

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Topics

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Influence of the heterostructure design on the optical properties of GaN and Al_0.1Ga_0.9N quantum dots for ultraviolet emission

Formation of GaN quantum dots by molecular beam epitaxy using NH₃ as nitrogen source

Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped Al_xGa_1−xN films using infrared spectroscopy

Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

GaN/Al_0.5Ga_0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties

Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

Blue-green and white color tuning of monolithic light emitting diodes

External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses

Room-temperature continuous-wave metal grating distributed feedback quantum cascade lasers

Tailoring the shape of GaN / Al x Ga 1 − x N nanostructures to extend their luminescence in the visible range

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter

Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

Layer-by-layer epitaxial growth of Mg on GaN(0001)

Blue-light emission from GaN ∕ Al 0.5 Ga 0.5 N quantum dots

Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities

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