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Journal Articles

Temperature dependence of the current in Schottky-barrier source-gated transistors

R. A. Sporea, M. Overy, J. M. Shannon, S. R. P. Silva

J. Appl. Phys. 117, 184502 (2015)

https://doi.org/10.1063/1.4921114

Published: May 2015

View article titled, Temperature dependence of the current in Schottky-barrier source-gated transistors

Includes: Supplementary data

Journal Articles

Pulsed laser deposited tetrahedral amorphous carbon with high s p 3 fractions and low optical bandgaps

Y. Miyajima, S. J. Henley, G. Adamopoulos, V. Stolojan, E. Garcia-Caurel, B. Drévillon, J. M. Shannon, S. R. P. Silva

J. Appl. Phys. 105, 073521 (2009)

https://doi.org/10.1063/1.3095667

Published: April 2009

View article titled, Pulsed laser deposited tetrahedral amorphous carbon with high s p 3 fractions and low optical bandgaps

Journal Articles

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Y. Miyajima, G. Adamopoulos, S. J. Henley, V. Stolojan, Y. Tison, E. Garcia-Caurel, B. Drévillon, J. M. Shannon, S. R. P. Silva

J. Appl. Phys. 104, 063701 (2008)

https://doi.org/10.1063/1.2977718

Published: September 2008

View article titled, Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Journal Articles

Electrical properties of pulsed UV laser irradiated amorphous carbon

Y. Miyajima, A. A. D. T. Adikaari, S. J. Henley, J. M. Shannon, S. R. P. Silva

Appl. Phys. Lett. 92, 152104 (2008)

https://doi.org/10.1063/1.2908208

Published: April 2008

View article titled, Electrical properties of pulsed UV laser irradiated amorphous carbon

Journal Articles

The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

E. C. Knox-Davies, J. M. Shannon, S. R. P. Silva

J. Appl. Phys. 99, 073503 (2006)

https://doi.org/10.1063/1.2186380

Published: April 2006

View article titled, The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Journal Articles

Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

E. C. Knox-Davies, S. J. Henley, J. M. Shannon, S. R. P. Silva

J. Appl. Phys. 99, 036108 (2006)

https://doi.org/10.1063/1.2171780

Published: February 2006

View article titled, Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

Journal Articles

Modeling of high-current source-gated transistors in amorphous silicon

F. Balon, J. M. Shannon, B. J. Sealy

Appl. Phys. Lett. 86, 073503 (2005)

https://doi.org/10.1063/1.1865348

Published: February 2005

View article titled, Modeling of high-current source-gated transistors in amorphous silicon

Journal Articles

Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal–semiconductor–metal structures

J. O. Orwa, J. M. Shannon, R. G. Gateru, S. R. P. Silva

J. Appl. Phys. 97, 023519 (2005)

https://doi.org/10.1063/1.1834710

Published: December 2004

View article titled, Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal–semiconductor–metal structures

Journal Articles

Polarity-dependent forming in ion bombarded amorphous silicon memory devices

R. G. Gateru, J. O. Orwa, J. M. Shannon

J. Appl. Phys. 97, 024506 (2005)

https://doi.org/10.1063/1.1832748

Published: December 2004

View article titled, Polarity-dependent forming in ion bombarded amorphous silicon memory devices

Journal Articles

Stable transistors in hydrogenated amorphous silicon

J. M. Shannon

Appl. Phys. Lett. 85, 326–328 (2004)

https://doi.org/10.1063/1.1772518

Published: July 2004

View article titled, Stable transistors in hydrogenated amorphous silicon

Journal Articles

Fabrication of a self-aligned microtip field emission array

R. D. Forrest, D. C. Cox, Y. F. Tang, J. M. Shannon, S. R. P. Silva

J. Vac. Sci. Technol. B 21, 1560–1565 (2003)

https://doi.org/10.1116/1.1596221

Published: July 2003

View article titled, Fabrication of a self-aligned microtip field emission array

Journal Articles

Growth of CrSi 2 by radiation enhanced diffusion at room temperature

J. M. Shannon, J. D. Hoyland, E. G. Gerstner

J. Appl. Phys. 92, 5068–5071 (2002)

https://doi.org/10.1063/1.1512968

Published: November 2002

View article titled, Growth of CrSi 2 by radiation enhanced diffusion at room temperature

Journal Articles

Electron field emission from excimer laser crystallized amorphous silicon

Y. F. Tang, S. R. P. Silva, B. O. Boskovic, J. M. Shannon, M. J. Rose

Appl. Phys. Lett. 80, 4154–4156 (2002)

https://doi.org/10.1063/1.1482141

Published: June 2002

View article titled, Electron field emission from excimer laser crystallized amorphous silicon

Journal Articles

Light degradation and voltage drift in polymer light-emitting diodes

G. C. M. Silvestre, M. T. Johnson, A. Giraldo, J. M. Shannon

Appl. Phys. Lett. 78, 1619–1621 (2001)

https://doi.org/10.1063/1.1355013

Published: March 2001

View article titled, Light degradation and voltage drift in polymer light-emitting diodes

Journal Articles

Room-temperature silicidation using radiation-enhanced diffusion in hydrogenated amorphous silicon

J. M. Shannon, M. K. Chai, B. J. Sealy

Appl. Phys. Lett. 76, 715–717 (2000)

https://doi.org/10.1063/1.125871

Published: February 2000

View article titled, Room-temperature silicidation using radiation-enhanced diffusion in hydrogenated amorphous silicon

Journal Articles

Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride

J. M. Shannon, B. A. Morgan

J. Appl. Phys. 86, 1548–1551 (1999)

https://doi.org/10.1063/1.370966

Published: August 1999

View article titled, Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride

Journal Articles

Electron field emission from amorphous silicon

S. R. P. Silva, R. D. Forrest, J. M. Shannon, B. J. Sealy

J. Vac. Sci. Technol. B 17, 596–600 (1999)

https://doi.org/10.1116/1.590601

Published: March 1999

View article titled, Electron field emission from amorphous silicon

Journal Articles

Electronic effects of ion damage in hydrogenated amorphous silicon alloys

R. A. C. M. M. van Swaaij, A. D. Annis, B. J. Sealy, J. M. Shannon

J. Appl. Phys. 82, 4800–4804 (1997)

https://doi.org/10.1063/1.366338

Published: November 1997

View article titled, Electronic effects of ion damage in hydrogenated amorphous silicon alloys

Journal Articles

Current induced drift mechanism in amorphous SiN_x:H thin film diodes

J. M. Shannon, S. C. Deane, B. McGarvey, J. N. Sandoe

Appl. Phys. Lett. 65, 2978–2980 (1994)

https://doi.org/10.1063/1.112482

Published: December 1994

View article titled, Current induced drift mechanism in amorphous SiN<sub><em>x</em></sub>:H thin film diodes

Journal Articles

On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. II. Reverse‐bias current mechanism

K. J. B. M. Nieuwesteeg, M. van der Veen, T. J. Vink, J. M. Shannon

J. Appl. Phys. 74, 2581–2589 (1993)

https://doi.org/10.1063/1.354671

Published: August 1993

View article titled, On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. II. Reverse‐bias current mechanism

NARROW

Topics

Temperature dependence of the current in Schottky-barrier source-gated transistors

Pulsed laser deposited tetrahedral amorphous carbon with high s p 3 fractions and low optical bandgaps

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Electrical properties of pulsed UV laser irradiated amorphous carbon

The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

Modeling of high-current source-gated transistors in amorphous silicon

Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal–semiconductor–metal structures

Polarity-dependent forming in ion bombarded amorphous silicon memory devices

Stable transistors in hydrogenated amorphous silicon

Fabrication of a self-aligned microtip field emission array

Growth of CrSi 2 by radiation enhanced diffusion at room temperature

Electron field emission from excimer laser crystallized amorphous silicon

Light degradation and voltage drift in polymer light-emitting diodes

Room-temperature silicidation using radiation-enhanced diffusion in hydrogenated amorphous silicon

Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride

Electron field emission from amorphous silicon

Electronic effects of ion damage in hydrogenated amorphous silicon alloys

Current induced drift mechanism in amorphous SiN_x:H thin film diodes

On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. II. Reverse‐bias current mechanism

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