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J. M. Rorison
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Journal Articles

Negative differential velocity in ultradilute GaAs1−xNx alloys

N. Vogiatzis, J. M. Rorison
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 083720 (2011)
https://doi.org/10.1063/1.3575336
Published: April 2011
View article titled, Negative differential velocity in ultradilute GaAs<sub>1−</sub><em><sub>x</sub></em>N<em><sub>x</sub></em> alloys
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Journal Articles

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

T. Piwonski, J. Pulka, G. Madden, G. Huyet, J. Houlihan, J. Pozo, N. Vogiatzis, P. Ivanov, J. M. Rorison, P. J. Barrios, J. A. Gupta
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 083104 (2009)
https://doi.org/10.1063/1.3246781
Published: October 2009
View article titled, Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers
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Journal Articles

Influence of composition diffusion on the band structures of InGaNAs ∕ GaAs quantum wells investigated by the band-anticrossing model

Y. N. Qiu, J. M. Rorison, H. D. Sun, S. Calvez, M. D. Dawson, A. C. Bryce
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 231112 (2005)
https://doi.org/10.1063/1.2138350
Published: November 2005
View article titled, Influence of composition diffusion on the band structures of InGaNAs ∕ GaAs quantum wells investigated by the band-anticrossing model
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Journal Articles

An improved band-anticrossing model – including the positional dependence of nitrogen – for InGaNAs∕GaAs quantum well lasers

Y. N. Qiu, J. M. Rorison
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 081111 (2005)
https://doi.org/10.1063/1.2034103
Published: August 2005
View article titled, An improved band-anticrossing model – including the positional dependence of nitrogen – for InGaNAs∕GaAs quantum well lasers
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Journal Articles

Spectroscopic characterization of 1.3 μ m GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy

H. D. Sun, A. H. Clark, S. Calvez, M. D. Dawson, Y. N. Qiu, J. M. Rorison, K. S. Kim, T. Kim, Y. J. Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 092106 (2005)
https://doi.org/10.1063/1.1868866
Published: February 2005
View article titled, Spectroscopic characterization of 1.3 μ m GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy
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Journal Articles

Optical characteristics of 1.55 μ m GaInNAs multiple quantum wells

H. D. Sun, A. H. Clark, H. Y. Liu, M. Hopkinson, S. Calvez, M. D. Dawson, Y. N. Qiu, J. M. Rorison
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4013–4015 (2004)
https://doi.org/10.1063/1.1812371
Published: November 2004
View article titled, Optical characteristics of 1.55 μ m GaInNAs multiple quantum wells
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Journal Articles

Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

H. D. Sun, M. D. Dawson, M. Othman, J. C. L. Yong, J. M. Rorison, P. Gilet, L. Grenouillet, A. Million
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 376–378 (2003)
https://doi.org/10.1063/1.1539921
Published: January 2003
View article titled, Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy
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Journal Articles

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, R. P. Schneider
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 4076–4078 (2001)
https://doi.org/10.1063/1.1424061
Published: December 2001
View article titled, Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes
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Journal Articles

Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

J. C. L. Yong, J. M. Rorison, I. H. White
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 1085–1087 (2001)
https://doi.org/10.1063/1.1390482
Published: August 2001
View article titled, Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers
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Journal Articles

Vertical Cavity Surface Emitting Lasers for communications

J. M. Rorison
Journal: AIP Conference Proceedings
AIP Conf. Proc. 548, 279–302 (2000)
https://doi.org/10.1063/1.1337769
Published: December 2000
View article titled, Vertical Cavity Surface Emitting Lasers for communications
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Journal Articles

Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers

L. J. Sargent, J. M. Rorison, M. Kuball, R. V. Penty, I. H. White, S. W. Corzine, M. R. T. Tan, S. Y. Wang, P. J. Heard
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 400–402 (2000)
https://doi.org/10.1063/1.125767
Published: January 2000
View article titled, Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers
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