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Journal Articles

Distinct nonequilibrium plasma chemistry of C 2 affecting the synthesis of nanodiamond thin films from C 2 H 2 (1%)/ H 2 / Ar -rich plasmas

F. J. Gordillo-Vázquez, J. M. Albella

J. Appl. Phys. 94, 6085–6090 (2003)

https://doi.org/10.1063/1.1617362

Published: October 2003

View article titled, Distinct nonequilibrium plasma chemistry of C 2 affecting the synthesis of nanodiamond thin films from C 2 H 2 (1%)/ H 2 / Ar -rich plasmas

Journal Articles

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

R. Gago, I. Jiménez, F. Agulló-Rueda, J. M Albella, Zs. Czigány, L. Hultman

J. Appl. Phys. 92, 5177–5182 (2002)

https://doi.org/10.1063/1.1512317

Published: October 2002

View article titled, Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Journal Articles

Composition profile of heat treated carbon nitride hard coatings

O. Böhme, S. Yang, D. G. Teer, J. M. Albella, E. Román

J. Vac. Sci. Technol. A 19, 2578–2580 (2001)

https://doi.org/10.1116/1.1395622

Published: September 2001

View article titled, Composition profile of heat treated carbon nitride hard coatings

Journal Articles

Choice of boron–carbon–nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studies

I. Jiménez, R. Gago, M. M. Garcı́a, J. M. Albella

J. Vac. Sci. Technol. B 19, 1358–1365 (2001)

https://doi.org/10.1116/1.1378010

Published: July 2001

View article titled, Choice of boron–carbon–nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studies

Journal Articles

Identification of ternary boron–carbon–nitrogen hexagonal phases by x-ray absorption spectroscopy

R. Gago, I. Jiménez, J. M. Albella, L. J. Terminello

Appl. Phys. Lett. 78, 3430–3432 (2001)

https://doi.org/10.1063/1.1376428

Published: May 2001

View article titled, Identification of ternary boron–carbon–nitrogen hexagonal phases by x-ray absorption spectroscopy

Journal Articles

Substrate/layer interface of amorphous-carbon hard coatings

O. Böhme, A. Cebollada, S. Yang, D. G. Teer, J. M. Albella, E. Román

J. Appl. Phys. 88, 1861–1866 (2000)

https://doi.org/10.1063/1.1305553

Published: August 2000

View article titled, Substrate/layer interface of amorphous-carbon hard coatings

Journal Articles

Bonding and hardness in nonhydrogenated carbon films with moderate sp 3 content

R. Gago, I. Jiménez, J. M. Albella, A. Climent-Font, D. Cáceres, I. Vergara, J. C. Banks, B. L. Doyle, L. J. Terminello

J. Appl. Phys. 87, 8174–8180 (2000)

https://doi.org/10.1063/1.373514

Published: June 2000

View article titled, Bonding and hardness in nonhydrogenated carbon films with moderate sp 3 content

Journal Articles

Plasma assisted chemical vapor deposition silicon oxynitride films grown from SiH 4 +NH 3 +O 2 gas mixtures

J. Olivares-Roza, O. Sánchez, J. M. Albella

J. Vac. Sci. Technol. A 16, 2757–2761 (1998)

https://doi.org/10.1116/1.581513

Published: September 1998

View article titled, Plasma assisted chemical vapor deposition silicon oxynitride films grown from SiH 4 +NH 3 +O 2 gas mixtures

Journal Articles

X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films

M. M. Garcı́a, I. Jiménez, L. Vázquez, C. Gómez-Aleixandre, J. M. Albella, O. Sánchez, L. J. Terminello, F. J. Himpsel

Appl. Phys. Lett. 72, 2105–2107 (1998)

https://doi.org/10.1063/1.121290

Published: April 1998

View article titled, X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films

Journal Articles

SiO_xN_y films deposited by remote plasma enhanced chemical vapor deposition using SiCl₄

O. Sanchez, M. A. Aguilar, C. Falcony, J. M. Martinez‐Duart, J. M. Albella

J. Vac. Sci. Technol. A 14, 2088–2093 (1996)

https://doi.org/10.1116/1.580085

Published: July 1996

View article titled, SiOxNy films deposited by remote plasma enhanced chemical vapor deposition using SiCl4

Journal Articles

Roughening kinetics of chemical vapor deposited copper films on Si(100)

L. Vázquez, J. M. Albella, R. C. Salvarezza, A. J. Arvia, R. A. Levy, D. Perese

Appl. Phys. Lett. 68, 1285–1287 (1996)

https://doi.org/10.1063/1.115954

Published: February 1996

View article titled, Roughening kinetics of chemical vapor deposited copper films on Si(100)

Journal Articles

Scanning tunneling microscopy morphological study of the first stages of growth of microwave chemical vapor deposited thin diamond films

L. Vázquez, O. Sánchez, J . M. Albella

J. Vac. Sci. Technol. B 12, 1–7 (1994)

https://doi.org/10.1116/1.587182

Published: January 1994

View article titled, Scanning tunneling microscopy morphological study of the first stages of growth of microwave chemical vapor deposited thin diamond films

Journal Articles

Optical emission characterization of CH₄+H₂ discharges for diamond deposition

C. Gomez‐Aleixandre, O. Sanchez, A. Castro, J. M. Albella

J. Appl. Phys. 74, 3752–3757 (1993)

https://doi.org/10.1063/1.354488

Published: September 1993

View article titled, Optical emission characterization of CH4+H2 discharges for diamond deposition

Journal Articles

Different types of pore structure in porous silicon

V. P. Parkhutik, J. M. Albella, J. M. Martinez‐Duart, J. M. Gómez‐Rodríguez, A. M. Baró, V. I. Shershulsky

Appl. Phys. Lett. 62, 366–368 (1993)

https://doi.org/10.1063/1.108958

Published: January 1993

View article titled, Different types of pore structure in porous silicon

Journal Articles

Influence of the discharge frequency (35 kHz and 13.56 MHz) on the composition of plasma enhanced chemical vapor deposition a‐C:H films

C. Gómez‐Aleixandre, O. Sánchez, J. M. Albella

J. Vac. Sci. Technol. A 11, 143–146 (1993)

https://doi.org/10.1116/1.578280

Published: January 1993

View article titled, Influence of the discharge frequency (35 kHz and 13.56 MHz) on the composition of plasma enhanced chemical vapor deposition a‐C:H films

Journal Articles

Infrared absorption and x‐ray photoelectron spectroscopy studies of the anodic oxidation of plasma silicon nitride

I. Montero, L. Galán, J. C. Pivin, O. Sánchez, J. M. Albella

J. Vac. Sci. Technol. A 9, 2285–2288 (1991)

https://doi.org/10.1116/1.577310

Published: July 1991

View article titled, Infrared absorption and x‐ray photoelectron spectroscopy studies of the anodic oxidation of plasma silicon nitride

Journal Articles

Silicon reaction of TiN_x diffusion barriers at high temperatures

M. C. Jiménez, M. Fernandez, J. M. Albella, J. M. Martinez‐Duart

J. Vac. Sci. Technol. B 9, 1492–1496 (1991)

https://doi.org/10.1116/1.585455

Published: May 1991

View article titled, Silicon reaction of TiNx diffusion barriers at high temperatures

Journal Articles

Low temperature nonilluminated anodization of n‐type silicon

I. Montero, R. J. Gómez‐San Roman, J. M. Albella, A. Climent, J. Perrière

J. Vac. Sci. Technol. B 8, 544–550 (1990)

https://doi.org/10.1116/1.585017

Published: May 1990

View article titled, Low temperature nonilluminated anodization of n‐type silicon

Journal Articles

Oxidation kinetics of plasma‐enhanced chemical vapor deposition silicon nitride films deposited from SiH₄/NH₃/NF₃/N₂ mixtures

C. Gómez‐Aleixandre, O. Sanchez Garrido, J. M. Albella

J. Vac. Sci. Technol. B 8, 540–543 (1990)

https://doi.org/10.1116/1.585016

Published: May 1990

View article titled, Oxidation kinetics of plasma‐enhanced chemical vapor deposition silicon nitride films deposited from SiH4/NH3/NF3/N2 mixtures

Journal Articles

Anodic oxidation of tantalum silicide

J. M. Martínez‐Duart, M. Fernández, E. Paule, A. Climent, J. M. Albella, J. Perriere, J. Siejka

Appl. Phys. Lett. 47, 579–581 (1985)

https://doi.org/10.1063/1.96077

Published: September 1985

View article titled, Anodic oxidation of tantalum silicide

NARROW

Topics

Distinct nonequilibrium plasma chemistry of C 2 affecting the synthesis of nanodiamond thin films from C 2 H 2 (1%)/ H 2 / Ar -rich plasmas

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Composition profile of heat treated carbon nitride hard coatings

Choice of boron–carbon–nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studies

Identification of ternary boron–carbon–nitrogen hexagonal phases by x-ray absorption spectroscopy

Substrate/layer interface of amorphous-carbon hard coatings

Bonding and hardness in nonhydrogenated carbon films with moderate sp 3 content

Plasma assisted chemical vapor deposition silicon oxynitride films grown from SiH 4 +NH 3 +O 2 gas mixtures

X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films

SiO_xN_y films deposited by remote plasma enhanced chemical vapor deposition using SiCl₄

Roughening kinetics of chemical vapor deposited copper films on Si(100)

Scanning tunneling microscopy morphological study of the first stages of growth of microwave chemical vapor deposited thin diamond films

Optical emission characterization of CH₄+H₂ discharges for diamond deposition

Different types of pore structure in porous silicon

Influence of the discharge frequency (35 kHz and 13.56 MHz) on the composition of plasma enhanced chemical vapor deposition a‐C:H films

Infrared absorption and x‐ray photoelectron spectroscopy studies of the anodic oxidation of plasma silicon nitride

Silicon reaction of TiN_x diffusion barriers at high temperatures

Low temperature nonilluminated anodization of n‐type silicon

Oxidation kinetics of plasma‐enhanced chemical vapor deposition silicon nitride films deposited from SiH₄/NH₃/NF₃/N₂ mixtures

Anodic oxidation of tantalum silicide

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