1-20 of 128
J. Kwo
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications

L. B. Young, Y. H. G. Lin, H. W. Wan, J. Liu, Y. T. Cheng, B. Y. Chen, K. M. Chen, H. W. Chang, M. J. Wang, J. Kwo, M. Hong
Journal: APL Electronic Devices
APL Electronic Devices 1, 016113 (2025)
https://doi.org/10.1063/5.0244788
Published: March 2025
View article titled, Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications
Open the PDF for Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications in another window
Journal Articles

Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity

Y. H. G. Lin, C. K. Cheng, L. B. Young, L. S. Chiang, W. S. Chen, K. H. Lai, S. P. Chiu, C. T. Wu, C. T. Liang, J. J. Lin, C. H. Hsu, Y. H. Lin, J. Kwo, M. Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 074401 (2024)
https://doi.org/10.1063/5.0213941
Published: August 2024
View article titled, Nanometer-thick molecular beam epitaxy Al films capped with <em>in situ</em> deposited Al<sub>2</sub>O<sub>3</sub>—High-crystallinity, morphology, and superconductivity
Open the PDF for Nanometer-thick molecular beam epitaxy Al films capped with <em>in situ</em> deposited Al<sub>2</sub>O<sub>3</sub>—High-crystallinity, morphology, and superconductivity in another window
Journal Articles

Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

Y. H. G. Lin, H. W. Wan, L. B. Young, K. H. Lai, J. Liu, Y. T. Cheng, J. Kwo, M. Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 015701 (2024)
https://doi.org/10.1063/5.0174575
Published: January 2024
View article titled, Effective passivation of <em>p-</em> and <em>n-</em>type In<sub>0.53</sub>Ga<sub>0.47</sub>As in achieving low leakage current, low interfacial traps, and low border traps
Open the PDF for Effective passivation of <em>p-</em> and <em>n-</em>type In<sub>0.53</sub>Ga<sub>0.47</sub>As in achieving low leakage current, low interfacial traps, and low border traps in another window
Journal Articles

In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

Y. H. G. Lin, H. W. Wan, L. B. Young, J. Liu, Y. T. Cheng, K. Y. Lin, Y. J. Hong, C. T. Wu, J. Kwo, M. Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 252104 (2021)
https://doi.org/10.1063/5.0045845
Published: June 2021
View article titled, <em>In situ</em> Y<sub>2</sub>O<sub>3</sub> on <em>p</em>-In<sub>0.53</sub>Ga<sub>0.47</sub>As—Attainment of low interfacial trap density and thermal stability at high temperatures
Open the PDF for <em>In situ</em> Y<sub>2</sub>O<sub>3</sub> on <em>p</em>-In<sub>0.53</sub>Ga<sub>0.47</sub>As—Attainment of low interfacial trap density and thermal stability at high temperatures in another window
Includes: Supplementary data
Journal Articles

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

C. C. Chen (陳俊嘉), K. H. M. Chen (陳可璇), Y. T. Fanchiang (范姜宇廷), C. C. Tseng (曾俊智), S. R. Yang (楊尚融), C. N. Wu (巫啓男), M. X. Guo (郭孟鑫), C. K. Cheng (鄭兆凱), S. W. Huang (黃聖文), K. Y. Lin (林耕雍), C. T. Wu (吳建霆), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 031601 (2019)
https://doi.org/10.1063/1.5054329
Published: January 2019
View article titled, Topological insulator Bi<sub>2</sub>Se<sub>3</sub> films on rare earth iron garnets and their high-quality interfaces
Open the PDF for Topological insulator Bi<sub>2</sub>Se<sub>3</sub> films on rare earth iron garnets and their high-quality interfaces in another window
Includes: Supplementary data
Journal Articles

A new stable, crystalline capping material for topological insulators

H. Y. Lin, C. K. Cheng, K. H. M. Chen, C. C. Tseng, S. W. Huang, M. T. Chang, S. C. Tseng, M. Hong, J. Kwo
Journal: APL Materials
APL Mater. 6, 066108 (2018)
https://doi.org/10.1063/1.5029706
Published: June 2018
View article titled, A new stable, crystalline capping material for topological insulators
Open the PDF for A new stable, crystalline capping material for topological insulators in another window
Journal Articles

High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

C. N. Wu, C. C. Tseng, K. Y. Lin, C. K. Cheng, S. L. Yeh, Y. T. Fanchiang, M. Hong, J. Kwo
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 8, 055904 (2018)
https://doi.org/10.1063/1.5006673
Published: December 2017
View article titled, High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by <em>off-axis</em> sputtering
Open the PDF for High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by <em>off-axis</em> sputtering in another window
Journal Articles

Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin, T. W. Pi, J. Kwo
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 123502 (2017)
https://doi.org/10.1063/1.5003616
Published: September 2017
View article titled, Perfecting the Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using <em>in-situ</em> atomic-layer-deposition
Open the PDF for Perfecting the Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using <em>in-situ</em> atomic-layer-deposition in another window
Journal Articles

Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2

K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), C. K. Cheng (鄭兆凱), X. Q. Zhang (張鋅權), C. M. Cheng (鄭澄懋), S. F. Lee (李尚凡), C. H. Hsu (徐嘉鴻), Y. H. Lee (李奕賢), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 083106 (2017)
https://doi.org/10.1063/1.4989805
Published: August 2017
View article titled, Van der Waals epitaxy of topological insulator Bi<sub>2</sub>Se<sub>3</sub> on single layer transition metal dichalcogenide MoS<sub>2</sub>
Open the PDF for Van der Waals epitaxy of topological insulator Bi<sub>2</sub>Se<sub>3</sub> on single layer transition metal dichalcogenide MoS<sub>2</sub> in another window
Includes: Supplementary data
Journal Articles

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

T. W. Pi (皮敦文), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), Y. T. Cheng (鄭伊婷), G. J. Wei (魏國珍), K. Y. Lin (林耕雍), C. -P. Cheng (鄭秋平), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 052107 (2017)
https://doi.org/10.1063/1.4975479
Published: February 2017
View article titled, Relevance of GaAs(001) surface electronic structure for high frequency dispersion on <em>n</em>-type accumulation capacitance
Open the PDF for Relevance of GaAs(001) surface electronic structure for high frequency dispersion on <em>n</em>-type accumulation capacitance in another window
Journal Articles

Demonstration of large field effect in topological insulator films via a high-κ back gate

C. Y. Wang (王澄宇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), K. H. M. Chen (陳可璇), Y. H. Lin (林延勳), K. H. Chen (陳冠雄), L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), Y. T. Fanchiang (范姜宇廷), S. C. Tseng (曾紹欽), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 202403 (2016)
https://doi.org/10.1063/1.4950849
Published: May 2016
View article titled, Demonstration of large field effect in topological insulator films via a high-κ back gate
Open the PDF for Demonstration of large field effect in topological insulator films via a high-κ back gate in another window
Journal Articles

Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K. Cheng, H. Y. Hung, C. H. Hsu, J. Kwo, M. Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 122402 (2015)
https://doi.org/10.1063/1.4931443
Published: September 2015
View article titled, Epitaxial ferromagnetic Fe<sub>3</sub>Si on GaAs(111)A with atomically smooth surface and interface
Open the PDF for Epitaxial ferromagnetic Fe<sub>3</sub>Si on GaAs(111)A with atomically smooth surface and interface in another window
Journal Articles

Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping

C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin, S. F. Lee, M. Hong, J. Kwo
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 117, 17D148 (2015)
https://doi.org/10.1063/1.4918631
Published: April 2015
View article titled, Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
Open the PDF for Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping in another window
Journal Articles

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

R. L. Chu (朱瑞霖), T. H. Chiang (江宗鴻), W. J. Hsueh (薛惟仁), K. H. Chen (陳冠雄), K. Y. Lin (林耕雍), G. J. Brown, J. I. Chyi (綦振瀛), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 182106 (2014)
https://doi.org/10.1063/1.4901100
Published: November 2014
View article titled, Passivation of GaSb using molecular beam epitaxy Y<sub>2</sub>O<sub>3</sub> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
Open the PDF for Passivation of GaSb using molecular beam epitaxy Y<sub>2</sub>O<sub>3</sub> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors in another window
Journal Articles

Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures

H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M. Hong, J. Kwo
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 152413 (2014)
https://doi.org/10.1063/1.4898781
Published: October 2014
View article titled, Observation of strongly enhanced inverse spin Hall voltage in Fe<sub>3</sub>Si/GaAs structures
Open the PDF for Observation of strongly enhanced inverse spin Hall voltage in Fe<sub>3</sub>Si/GaAs structures in another window
Includes: Supplementary data
Journal Articles

Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

R. L. Chu (朱瑞霖), Y. C. Liu (劉有騏), W. C. Lee (李威縉), T. D. Lin (林宗達), M. L. Huang (黃懋霖), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 202102 (2014)
https://doi.org/10.1063/1.4879022
Published: May 2014
View article titled, Greatly improved interfacial passivation of <em>in-situ</em> high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
Open the PDF for Greatly improved interfacial passivation of <em>in-situ</em> high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100) in another window
Journal Articles

Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 × 2 from atomic layer deposition

T. W. Pi (皮敦文), T. D. Lin (林宗達), H. Y. Lin (林孝于), Y. C. Chang (張耀中), G. K. Wertheim, J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 042904 (2014)
https://doi.org/10.1063/1.4863440
Published: January 2014
View article titled, Synchrotron radiation photoemission study of interfacial electronic structure of HfO<sub>2</sub> on In<sub>0.53</sub>Ga<sub>0.47</sub>As(001)-4 × 2 from atomic layer deposition
Open the PDF for Synchrotron radiation photoemission study of interfacial electronic structure of HfO<sub>2</sub> on In<sub>0.53</sub>Ga<sub>0.47</sub>As(001)-4 × 2 from atomic layer deposition in another window
Journal Articles

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

T. D. Lin (林宗達), W. H. Chang (張文馨), R. L. Chu (朱瑞霖), Y. C. Chang (張耀中), Y. H. Chang (張宇行), M. Y. Lee (李美儀), P. F. Hong (洪鵬飛), Min-Cheng Chen (陳旻政), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 253509 (2013)
https://doi.org/10.1063/1.4852975
Published: December 2013
View article titled, High-performance self-aligned inversion-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor field-effect-transistors by <em>in-situ</em> atomic-layer-deposited HfO<sub>2</sub>
Open the PDF for High-performance self-aligned inversion-channel In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor field-effect-transistors by <em>in-situ</em> atomic-layer-deposited HfO<sub>2</sub> in another window
Journal Articles

Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4 × 2 surface: A high-resolution core-level photoemission study

T. W. Pi (皮敦文), H. Y. Lin (林孝于), T. H. Chiang (江宗鴻), Y. T. Liu (劉雅婷), G. K. Wertheim, J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 203703 (2013)
https://doi.org/10.1063/1.4807400
Published: May 2013
View article titled, Interfacial electronic structure of trimethyl-aluminum and water on an In<sub>0.20</sub>Ga<sub>0.80</sub>As(001)-4 × 2 surface: A high-resolution core-level photoemission study
Open the PDF for Interfacial electronic structure of trimethyl-aluminum and water on an In<sub>0.20</sub>Ga<sub>0.80</sub>As(001)-4 × 2 surface: A high-resolution core-level photoemission study in another window
Journal Articles

Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals

C. N. Wu, T. S. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, Y. L. Soo, M. Hong, J. Kwo
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 113, 17C309 (2013)
https://doi.org/10.1063/1.4799613
Published: April 2013
View article titled, Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals
Open the PDF for Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals in another window