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Journal Articles

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, A. Sarangan, Imad Agha, J. Kouvetakis, J. Menéndez, J. Mathews

AIP Advances 12, 075016 (2022)

https://doi.org/10.1063/5.0094589

Published: July 2022

View article titled, Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Journal Articles

Synthesis and optical properties of (GaAs)_yGe_5-2_y alloys assembled from molecular building blocks

P. E. Sims, P. M. Wallace, Chi Xu, C. D. Poweleit, B. Claflin, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 111, 122101 (2017)

https://doi.org/10.1063/1.5003345

Published: September 2017

View article titled, Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

Journal Articles

Direct gap Ge_1-ySn_y alloys: Fabrication and design of mid-IR photodiodes

C. L. Senaratne, P. M. Wallace, J. D. Gallagher, P. E. Sims, J. Kouvetakis, J. Menéndez

J. Appl. Phys. 120, 025701 (2016)

https://doi.org/10.1063/1.4956439

Published: July 2016

View article titled, Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Journal Articles

Ge₁₋_x₋_ySi_xSn_y light emitting diodes on silicon for mid-infrared photonic applications

J. D. Gallagher, C. Xu, C. L. Senaratne, T. Aoki, P. M. Wallace, J. Kouvetakis, J. Menéndez

J. Appl. Phys. 118, 135701 (2015)

https://doi.org/10.1063/1.4931770

Published: October 2015

View article titled, Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Journal Articles

Electroluminescence from Ge₁₋_ySn_y diodes with degenerate pn junctions

J. D. Gallagher, C. L. Senaratne, P. M. Wallace, J. Menéndez, J. Kouvetakis

Appl. Phys. Lett. 107, 123507 (2015)

https://doi.org/10.1063/1.4931707

Published: September 2015

View article titled, Electroluminescence from Ge1−ySny diodes with degenerate pn junctions

Journal Articles

Non-radiative recombination in Ge₁₋_ySn_y light emitting diodes: The role of strain relaxation in tuned heterostructure designs

J. D. Gallagher, C. L. Senaratne, C. Xu, P. Sims, T. Aoki, D. J. Smith, J. Menéndez, J. Kouvetakis

J. Appl. Phys. 117, 245704 (2015)

https://doi.org/10.1063/1.4923060

Published: June 2015

View article titled, Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Journal Articles

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

J. D. Gallagher, C. L. Senaratne, P. Sims, T. Aoki, J. Menéndez, J. Kouvetakis

Appl. Phys. Lett. 106, 091103 (2015)

https://doi.org/10.1063/1.4913688

Published: March 2015

View article titled, Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Journal Articles

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Chi Xu, C. L. Senaratne, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 105, 232103 (2014)

https://doi.org/10.1063/1.4903492

Published: December 2014

View article titled, Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Journal Articles

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge₁₋_ySn_y alloys

J. D. Gallagher, C. L. Senaratne, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 105, 142102 (2014)

https://doi.org/10.1063/1.4897272

Published: October 2014

View article titled, Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

Journal Articles

Ge_1-_ySn_y (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

C. L. Senaratne, J. D. Gallagher, Liying Jiang, Toshihiro Aoki, D. J. Smith, J. Menéndez, J. Kouvetakis

J. Appl. Phys. 116, 133509 (2014)

https://doi.org/10.1063/1.4896788

Published: October 2014

View article titled, Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Journal Articles

Temperature-dependent photoluminescence of Ge/Si and Ge_1-ySn_y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Mee-Yi Ryu, Tom R. Harris, Y. K. Yeo, R. T. Beeler, J. Kouvetakis

Appl. Phys. Lett. 102, 171908 (2013)

https://doi.org/10.1063/1.4803927

Published: May 2013

View article titled, Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Journal Articles

Compositional dependence of the absorption edge and dark currents in Ge_1−x−ySi_xSn_y/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge₄H₁₀, Si₄H₁₀, and SnD₄

R. T. Beeler, Chi Xu, D. J. Smith, G. Grzybowski, J. Menéndez, J. Kouvetakis

Appl. Phys. Lett. 101, 221111 (2012)

https://doi.org/10.1063/1.4768217

Published: November 2012

View article titled, Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

Journal Articles

Next generation of Ge₁₋_ySn_y (y = 0.01-0.09) alloys grown on Si(100) via Ge₃H₈ and SnD₄: Reaction kinetics and tunable emission

G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 101, 072105 (2012)

https://doi.org/10.1063/1.4745770

Published: August 2012

View article titled, Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Journal Articles

(Si)₅₋₂_y(AlP)_y alloys assembled on Si(100) from Al-P-Si₃ building units

T. Watkins, L. Jiang, C. Xu, A. V. G. Chizmeshya, D. J. Smith, J. Menéndez, J. Kouvetakis

Appl. Phys. Lett. 100, 022101 (2012)

https://doi.org/10.1063/1.3675444

Published: January 2012

View article titled, (Si)5−2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units

Journal Articles

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

G. Grzybowski, L. Jiang, J. Mathews, R. Roucka, C. Xu, R. T. Beeler, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 99, 171910 (2011)

https://doi.org/10.1063/1.3655679

Published: October 2011

View article titled, Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Journal Articles

Direct gap electroluminescence from Si / Ge 1 − y Sn y p - i - n heterostructure diodes

R. Roucka, J. Mathews, R. T. Beeler, J. Tolle, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 98, 061109 (2011)

https://doi.org/10.1063/1.3554747

Published: February 2011

View article titled, Direct gap electroluminescence from Si / Ge 1 − y Sn y p - i - n heterostructure diodes

Journal Articles

Direct-gap photoluminescence with tunable emission wavelength in Ge 1 − y Sn y alloys on silicon

J. Mathews, R. T. Beeler, J. Tolle, C. Xu, R. Roucka, J. Kouvetakis, J. Menéndez

Appl. Phys. Lett. 97, 221912 (2010)

https://doi.org/10.1063/1.3521391

Published: December 2010

View article titled, Direct-gap photoluminescence with tunable emission wavelength in Ge 1 − y Sn y alloys on silicon

Journal Articles

Direct absorption edge in GeSiSn alloys

V. R. D’Costa, Y.‐Y. Fang, J. Tolle, J. Kouvetakis, J. Menéndez

AIP Conf. Proc. 1199, 39–40 (2010)

https://doi.org/10.1063/1.3295471

Published: January 2010

View article titled, Direct absorption edge in GeSiSn alloys

Journal Articles

Direct integration of active Ge 1 − x ( Si 4 Sn ) x semiconductors on Si(100)

Junqi Xie, J. Tolle, V. R. D’Costa, A. V. G. Chizmeshya, J. Menéndez, J. Kouvetakis

Appl. Phys. Lett. 95, 181909 (2009)

https://doi.org/10.1063/1.3242002

Published: November 2009

View article titled, Direct integration of active Ge 1 − x ( Si 4 Sn ) x semiconductors on Si(100)

Journal Articles

Practical B and P doping via Si x Sn y Ge 1 − x − y − z M z quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

Y.-Y. Fang, J. Tolle, A. V. G. Chizmeshya, J. Kouvetakis, V. R. D’Costa, J. Menendez

Appl. Phys. Lett. 95, 081113 (2009)

https://doi.org/10.1063/1.3204456

Published: August 2009

View article titled, Practical B and P doping via Si x Sn y Ge 1 − x − y − z M z quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

NARROW

Topics

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

Synthesis and optical properties of (GaAs)_yGe_5-2_y alloys assembled from molecular building blocks

Direct gap Ge_1-ySn_y alloys: Fabrication and design of mid-IR photodiodes

Ge₁₋_x₋_ySi_xSn_y light emitting diodes on silicon for mid-infrared photonic applications

Electroluminescence from Ge₁₋_ySn_y diodes with degenerate pn junctions

Non-radiative recombination in Ge₁₋_ySn_y light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge₁₋_ySn_y alloys

Ge_1-_ySn_y (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Temperature-dependent photoluminescence of Ge/Si and Ge_1-ySn_y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Compositional dependence of the absorption edge and dark currents in Ge_1−x−ySi_xSn_y/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge₄H₁₀, Si₄H₁₀, and SnD₄

Next generation of Ge₁₋_ySn_y (y = 0.01-0.09) alloys grown on Si(100) via Ge₃H₈ and SnD₄: Reaction kinetics and tunable emission

(Si)₅₋₂_y(AlP)_y alloys assembled on Si(100) from Al-P-Si₃ building units

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Direct gap electroluminescence from Si / Ge 1 − y Sn y p - i - n heterostructure diodes

Direct-gap photoluminescence with tunable emission wavelength in Ge 1 − y Sn y alloys on silicon

Direct absorption edge in GeSiSn alloys

Direct integration of active Ge 1 − x ( Si 4 Sn ) x semiconductors on Si(100)

Practical B and P doping via Si x Sn y Ge 1 − x − y − z M z quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

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