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J. J. Harris
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Journal Articles

Spin lifetime in high quality InSb epitaxial layers grown on GaAs

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K. L. Litvinenko, L. Nikzad, J. Allam, B. N. Murdin, C. R. Pidgeon, J. J. Harris, T. Zhang, L. F. Cohen
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 083105 (2007)
https://doi.org/10.1063/1.2719017
Published: April 2007
View articletitled, Spin lifetime in high quality InSb epitaxial layers grown on GaAs
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Journal Articles

Inherent magnetoresistance and surface morphology of InSb thin films

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Tong Zhang, J. J. Harris, W. R. Branford, S. K. Clowes, L. F. Cohen, S. A. Solin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 561–562 (2007)
https://doi.org/10.1063/1.2730015
Published: April 2007
View articletitled, Inherent magnetoresistance and surface morphology of InSb thin films
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Journal Articles

Tuning the inherent magnetoresistance of InSb thin films

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Tong Zhang, J. J. Harris, W. R. Branford, Y. V. Bugoslavsky, S. K. Clowes, L. F. Cohen, A. Husmann, S. A. Solin
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 012110 (2006)
https://doi.org/10.1063/1.2162666
Published: January 2006
View articletitled, Tuning the inherent magnetoresistance of InSb thin films
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Journal Articles

Temperature dependent sign of the interaction‐induced magnetoresistance in a n‐Si/SiGe heterostructure

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V. Renard, E. B. Olshanetsky, Z. D. Kvon, J.‐C. Portal, N. J. Woods, J. Zhang, J. J. Harris
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 487–488 (2005)
https://doi.org/10.1063/1.1994196
Published: June 2005
View articletitled, Temperature dependent sign of the interaction‐induced magnetoresistance in a n‐Si/SiGe heterostructure
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Journal Articles

High-mobility thin InSb films grown by molecular beam epitaxy

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T. Zhang, S. K. Clowes, M. Debnath, A. Bennett, C. Roberts, J. J. Harris, R. A. Stradling, L. F. Cohen, T. Lyford, P. F. Fewster
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 4463–4465 (2004)
https://doi.org/10.1063/1.1748850
Published: May 2004
View articletitled, High-mobility thin InSb films grown by molecular beam epitaxy
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Journal Articles

Detailed interpretation of electron transport in n- GaN

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C. Mavroidis, J. J. Harris, M. J. Kappers, C. J. Humphreys, Z. Bougrioua
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 9095–9103 (2003)
https://doi.org/10.1063/1.1571220
Published: June 2003
View articletitled, Detailed interpretation of electron transport in n- GaN
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Journal Articles

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

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C. Mavroidis, J. J. Harris, R. B. Jackman, I. Harrison, B. J. Ansell, Z. Bougrioua, I. Moerman
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 9835–9840 (2002)
https://doi.org/10.1063/1.1477604
Published: June 2002
View articletitled, Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers
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Journal Articles

Observation of thermally activated conduction at a GaN–sapphire interface

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C. Mavroidis, J. J. Harris, M. J. Kappers, N. Sharma, C. J. Humphreys, E. J. Thrush
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 1121–1123 (2001)
https://doi.org/10.1063/1.1395525
Published: August 2001
View articletitled, Observation of thermally activated conduction at a GaN–sapphire interface
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Journal Articles

Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures

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K. J. Lee, J. J. Harris, A. J. Kent, T. Wang, S. Sakai, D. K. Maude, J.-C. Portal
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 2893–2895 (2001)
https://doi.org/10.1063/1.1367310
Published: May 2001
View articletitled, Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures
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Journal Articles

Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch

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J. M. Hartmann, B. Gallas, J. Zhang, J. J. Harris, B. A. Joyce
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 845–849 (1999)
https://doi.org/10.1063/1.370813
Published: July 1999
View articletitled, Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch
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Journal Articles

Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures

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R. Jaszek, J. J. Harris, C. Roberts
Journal: Journal of Applied Physics
J. Appl. Phys. 85, 959–968 (1999)
https://doi.org/10.1063/1.369251
Published: January 1999
View articletitled, Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures
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Journal Articles

Optimization of contacts and mobilities for (001) oriented two‐dimensional hole gases

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T. S. Cheng, D. Johnston, J. Middleton, K. Strickland, O. H. Hughes, J. J. Harris, C. T. Foxon, C. J. Mellor
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 12, 2621–2624 (1994)
https://doi.org/10.1116/1.587220
Published: July 1994
View articletitled, Optimization of contacts and mobilities for (001) oriented two‐dimensional hole gases
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Journal Articles

Reduced mass of an exciton in a monolayer‐wide‐InAs/GaAs quantum well from magnetophotoluminescence measurements

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S. S. Dosanjh, E. F. Bowser, J. J. Harris
Journal: Applied Physics Letters
Appl. Phys. Lett. 64, 2142–2144 (1994)
https://doi.org/10.1063/1.111682
Published: April 1994
View articletitled, Reduced mass of an exciton in a monolayer‐wide‐InAs/GaAs quantum well from magnetophotoluminescence measurements
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Journal Articles

Surface segregation effects of In in GaAs

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S. S. Dosanjh, X. M. Zhang, D. Sansom, J. J. Harris, M. R. Fahy, B. A. Joyce, J. B. Clegg
Journal: Journal of Applied Physics
J. Appl. Phys. 74, 2481–2485 (1993)
https://doi.org/10.1063/1.354686
Published: August 1993
View articletitled, Surface segregation effects of In in GaAs
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Journal Articles

The lattice locations of silicon atoms in delta‐doped layers in GaAs

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M. J. Ashwin, M. Fahy, J. J. Harris, R. C. Newman, D. A. Sansom, R. Addinall, D. S. McPhail, V. K. M. Sharma
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 633–639 (1993)
https://doi.org/10.1063/1.353374
Published: January 1993
View articletitled, The lattice locations of silicon atoms in delta‐doped layers in GaAs
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Journal Articles

Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system

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M. R. Fahy, M. J. Ashwin, J. J. Harris, R. C. Newman, B. A. Joyce
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 1805–1807 (1992)
https://doi.org/10.1063/1.108406
Published: October 1992
View articletitled, Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system
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Journal Articles

Side gating in δ‐doped quantum wires

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Y. Feng, T. J. Thornton, J. J. Harris, D. Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 94–96 (1992)
https://doi.org/10.1063/1.107386
Published: January 1992
View articletitled, Side gating in δ‐doped quantum wires
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Journal Articles

Elimination of DX centerlike behavior of donors in heavily doped GaAs

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T. Suski, P. Wisniewski, C. Skierbiszewski, L. H. Dmowski, P. J. van der Wel, J. Singleton, L. J. Giling, J. J. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 3087–3093 (1991)
https://doi.org/10.1063/1.348572
Published: March 1991
View articletitled, Elimination of DX centerlike behavior of donors in heavily doped GaAs
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Journal Articles

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

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J. Wagner, M. Maier, R. Murray, R. C. Newman, R. B. Beall, J. J. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 971–974 (1991)
https://doi.org/10.1063/1.347289
Published: January 1991
View articletitled, Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy
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Journal Articles

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

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R. Murray, R. C. Newman, M. J. L. Sangster, R. B. Beall, J. J. Harris, P. J. Wright, J. Wagner, M. Ramsteiner
Journal: Journal of Applied Physics
J. Appl. Phys. 66, 2589–2596 (1989)
https://doi.org/10.1063/1.344224
Published: September 1989
View articletitled, The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering
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