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1-20 of 149
J. J. Coleman
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Journal Articles
Ultrafast optical properties of lithographically defined quantum dot amplifiers
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 104, 061106 (2014)
Published: February 2014
Journal Articles
Highly uniform periodic inverse quantum dots arrays
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 100, 121115 (2012)
Published: March 2012
Journal Articles
A single spectral mode wide stripe laser with very narrow linewidth
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 99, 171109 (2011)
Published: October 2011
Journal Articles
Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 109, 123112 (2011)
Published: June 2011
Journal Articles
Directed self-assembly of InAs quantum dots on nano-oxide templates
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 98, 141112 (2011)
Published: April 2011
Journal Articles
Experimental verification of reduced intersubband scattering in ordered nanopore lattices
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 98, 071109 (2011)
Published: February 2011
Journal Articles
Intersubband selection and sum rules in a patterned inverse quantum dot array
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 106, 054503 (2009)
Published: September 2009
Journal Articles
A parametric analysis of the density of states and intraband energy gaps in an ordered nanopore array diode laser
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 105, 043106 (2009)
Published: February 2009
Journal Articles
High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 93, 111117 (2008)
Published: September 2008
Journal Articles
Internal loss, modal characteristics, and bend loss of asymmetric cladding ridge waveguide lasers at 850 nm
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 103, 013108 (2008)
Published: January 2008
Journal Articles
Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry
Available to PurchaseT. J. Kim, T. H. Ghong, Y. D. Kim, D. E. Aspnes, M. V. Klein, D-S. Ko, Y-W. Kim, V. C. Elarde, J. J. Coleman
Journal:
Journal of Applied Physics
J. Appl. Phys. 102, 063512 (2007)
Published: September 2007
Journal Articles
Scattering loss and effective index step of asymmetric cladding surface-etched distributed Bragg reflector lasers at 850 nm
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 101, 053116 (2007)
Published: March 2007
Journal Articles
The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 84, 3031–3033 (2004)
Published: April 2004
Journal Articles
Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 79, 221–223 (2001)
Published: July 2001
Journal Articles
Effects of material growth technique and Mg doping on Er 3+ photoluminescence in Er-implanted GaN
Available to PurchaseS. Kim, R. L. Henry, A. E. Wickenden, D. D. Koleske, S. J. Rhee, J. O. White, J. M. Myoung, K. Kim, X. Li, J. J. Coleman, S. G. Bishop
Journal:
Journal of Applied Physics
J. Appl. Phys. 90, 252–259 (2001)
Published: July 2001
Journal Articles
Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 76, 3031–3033 (2000)
Published: May 2000
Journal Articles
Selective enhancement of 1540 nm Er 3+ emission centers in Er-implanted GaN by Mg codoping
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 76, 2403–2405 (2000)
Published: April 2000
Journal Articles
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 75, 4049–4051 (1999)
Published: December 1999
Journal Articles
Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 74, 1000–1002 (1999)
Published: February 1999
Journal Articles
GaN epitaxial lateral overgrowth and optical characterization
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 73, 1179–1181 (1998)
Published: August 1998
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