1-14 of 14
J. Gebauer
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Laser structured surfaces for metal-plastic hybrid joined by injection molding

Editor’s PickAvailable to Purchase
J. Gebauer, M. Fischer, A. F. Lasagni, I. Kühnert, A. Klotzbach
Journal: Journal of Laser Applications
J. Laser Appl. 30, 032021 (2018)
https://doi.org/10.2351/1.5036803
Published: August 2018
View articletitled, Laser structured surfaces for metal-plastic hybrid joined by injection molding
Open the PDF for Laser structured surfaces for metal-plastic hybrid joined by injection molding in another window
Journal Articles

Vacancy generation during Cu diffusion in GaAs

Available to Purchase
M. Elsayed, V. Bondarenko, K. Petters, J. Gebauer, R. Krause-Rehberg
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 103526 (2008)
https://doi.org/10.1063/1.3028273
Published: November 2008
View articletitled, Vacancy generation during Cu diffusion in GaAs
Open the PDF for Vacancy generation during Cu diffusion in GaAs in another window
Journal Articles

Vacancy formation in GaAs under different equilibrium conditions

Available to Purchase
V. Bondarenko, J. Gebauer, F. Redmann, R. Krause-Rehberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 161906 (2005)
https://doi.org/10.1063/1.2084330
Published: October 2005
View articletitled, Vacancy formation in GaAs under different equilibrium conditions
Open the PDF for Vacancy formation in GaAs under different equilibrium conditions in another window
Journal Articles

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Available to Purchase
R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, S. Hautakangas, K. Saarinen
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3457–3459 (2003)
https://doi.org/10.1063/1.1578169
Published: May 2003
View articletitled, Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
Open the PDF for Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN in another window
Journal Articles

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

Available to Purchase
J. Gebauer, E. R. Weber, N. D. Jäger, K. Urban, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2059–2061 (2003)
https://doi.org/10.1063/1.1563835
Published: March 2003
View articletitled, Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy
Open the PDF for Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy in another window
Journal Articles

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

Available to Purchase
R. Armitage, Qing Yang, H. Feick, J. Gebauer, E. R. Weber, Satoko Shinkai, Katsutaka Sasaki
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1450–1452 (2002)
https://doi.org/10.1063/1.1501447
Published: August 2002
View articletitled, Lattice-matched HfN buffer layers for epitaxy of GaN on Si
Open the PDF for Lattice-matched HfN buffer layers for epitaxy of GaN on Si in another window
Journal Articles

Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?

Available to Purchase
J. Gebauer, R. Zhao, P. Specht, E. R. Weber, F. Börner, F. Redmann, R. Krause-Rehberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 4313–4315 (2001)
https://doi.org/10.1063/1.1427150
Published: December 2001
View articletitled, Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?
Open the PDF for Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures? in another window
Journal Articles

Defect identification in GaAs grown at low temperatures by positron annihilation

Available to Purchase
J. Gebauer, F. Börner, R. Krause-Rehberg, T. E. M. Staab, W. Bauer-Kugelmann, G. Kögel, W. Triftshäuser, P. Specht, R. C. Lutz, E. R. Weber, M. Luysberg
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 8368–8379 (2000)
https://doi.org/10.1063/1.373549
Published: June 2000
View articletitled, Defect identification in GaAs grown at low temperatures by positron annihilation
Open the PDF for Defect identification in GaAs grown at low temperatures by positron annihilation in another window
Journal Articles

Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4

Available to Purchase
W. K. Liu, D. I. Lubyshev, P. Specht, R. Zhao, E. R. Weber, J. Gebauer, A. J. SpringThorpe, R. W. Streater, S. Vijarnwannaluk, W. Songprakob, R. Zallen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 1594–1597 (2000)
https://doi.org/10.1116/1.591434
Published: May 2000
View articletitled, Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4
Open the PDF for Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4 in another window
Journal Articles

Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces

Available to Purchase
P. Quadbeck, Ph. Ebert, K. Urban, J. Gebauer, R. Krause-Rehberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 300–302 (2000)
https://doi.org/10.1063/1.125726
Published: January 2000
View articletitled, Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces
Open the PDF for Effect of dopant atoms on the roughness of III–V semiconductor cleavage surfaces in another window
Journal Articles

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

Available to Purchase
M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, E. R. Weber, J. Gebauer, R. Krause-Rehberg
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 561–566 (1998)
https://doi.org/10.1063/1.366723
Published: January 1998
View articletitled, Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs
Open the PDF for Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs in another window
Journal Articles

Ga vacancies in low-temperature-grown GaAs identified by slow positrons

Available to Purchase
J. Gebauer, R. Krause-Rehberg, S. Eichler, M. Luysberg, H. Sohn, E. R. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 638–640 (1997)
https://doi.org/10.1063/1.119814
Published: August 1997
View articletitled, Ga vacancies in low-temperature-grown GaAs identified by slow positrons
Open the PDF for Ga vacancies in low-temperature-grown GaAs identified by slow positrons in another window
Journal Articles

Proximity effect in iridium‐gold bilayers

Available to Purchase
U. Nagel, A. Nowak, H.‐J. Gebauer, P. Colling, S. Cooper, D. Dummer, P. Ferger, M. Frank, J. Igalson, A. Nucciotti, F. Pröbst, W. Seidel, E. Kellner, F.v. Feilitzsch, G. Forster
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 4262–4266 (1994)
https://doi.org/10.1063/1.357310
Published: October 1994
View articletitled, Proximity effect in iridium‐gold bilayers
Open the PDF for Proximity effect in iridium‐gold bilayers in another window
Journal Articles

Preliminary large transverse energy cross sections measured with a 2π calorimeter trigger

Available to Purchase
C. Favuzzi, G. Germinario, L. Guerriero, P. Lavopa, G. Maggi, C. de Marzo, M. de Palma, F. Posa, A. Ranieri, G. Selvaggi, P. Spinelli, F. Waldner, A. Biatas, W. Czyz, T. Coghen, A. Eskreys, K. Eskreys, D. Kisielewska, P. Malecki, K. Olkiewicz, K. Sliwa, P. Stopa, W. H. Evans, J. R. Fry, C. Grant, M. Houlden, A. Morton, H. Muirhead, J. Shiers, M. Antiċ, W. Baker, H. Bechteler, I. Derado, W. Eckardt, J. Fent, P. Freund, H. J. Gebauer, T. Kahl, R. Kalbach, A. Manz, P. Polakos, K. P. Pretzl, N. Schmitz, P. Seyboth, J. Seyerlein, D. Vranic, G. Wolf, F. Crijns, W. Metzger, C. Pols, T. Schouten, T. Spuijbroek, N. Sarma
Journal: AIP Conference Proceedings
AIP Conf. Proc. 68, 92–97 (1980)
https://doi.org/10.1063/1.32442
Published: February 1981
View articletitled, Preliminary large transverse energy cross sections measured with a 2π calorimeter trigger
Open the PDF for Preliminary large transverse energy cross sections measured with a 2π calorimeter trigger in another window