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Journal Articles

Characterization of neutral species in an NH₃-Ar plasma generated by a capacitively coupled plasma source at various radio frequencies

S. M. Johnson, J. P. Zhao, C. Schlechte, J. Carroll, T. Iwao, P. L. G. Ventzek, J. G. Ekerdt

J. Vac. Sci. Technol. A 41, 023002 (2023)

https://doi.org/10.1116/6.0002247

Published: February 2023

View articletitled, Characterization of neutral species in an NH3-Ar plasma generated by a capacitively coupled plasma source at various radio frequencies

Includes: Supplementary data

Journal Articles

Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

P. R. Fitzpatrick, J. G. Ekerdt

J. Vac. Sci. Technol. B 27, 2366–2374 (2009)

https://doi.org/10.1116/1.3253534

Published: November 2009

View articletitled, Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

Journal Articles

Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100)

P. R. Fitzpatrick, J. G. Ekerdt

J. Vac. Sci. Technol. A 26, 1397–1406 (2008)

https://doi.org/10.1116/1.2976564

Published: October 2008

View articletitled, Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100)

Journal Articles

Sealing ultralow κ porous dielectrics with thin boron carbonitride films

W. J. Ahearn, P. R. Fitzpatrick, J. G. Ekerdt

J. Vac. Sci. Technol. A 25, 570–574 (2007)

https://doi.org/10.1116/1.2731365

Published: April 2007

View articletitled, Sealing ultralow κ porous dielectrics with thin boron carbonitride films

Journal Articles

Optical characterization of process-dependent charging in hafnium oxide structures

R. Carriles, J. Kwon, Y. Q. An, L. Sun, S. K. Stanley, J. G. Ekerdt, M. C. Downer, J. Price, T. Boescke, A. C. Diebold

J. Vac. Sci. Technol. B 24, 2160–2168 (2006)

https://doi.org/10.1116/1.2218867

Published: July 2006

View articletitled, Optical characterization of process-dependent charging in hafnium oxide structures

Journal Articles

Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, M. A. Quevedo-Lopez, H. -J. Li, Y. Senzaki, J. J. Peterson, S. C. Song, S. A. Krishnan, N. Moumen, J. Barnett, G. Bersuker, P. Y. Hung, B. H. Lee, T. Lafford, Q. Wang, D. Gay, J. G. Ekerdt

J. Appl. Phys. 99, 023508 (2006)

https://doi.org/10.1063/1.2161819

Published: January 2006

View articletitled, Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

Journal Articles

Vinyl ether formulations for step and flash imprint lithography

E. K. Kim, M. D. Stewart, K. Wu, F. L. Palmieri, M. D. Dickey, J. G. Ekerdt, C. G. Willson

J. Vac. Sci. Technol. B 23, 2967–2971 (2005)

https://doi.org/10.1116/1.2131881

Published: December 2005

View articletitled, Vinyl ether formulations for step and flash imprint lithography

Journal Articles

Low-threshold field emission from cesiated silicon nanowires

N. N. Kulkarni, J. Bae, C.-K. Shih, S. K. Stanley, S. S. Coffee, J. G. Ekerdt

Appl. Phys. Lett. 87, 213115 (2005)

https://doi.org/10.1063/1.2136217

Published: November 2005

View articletitled, Low-threshold field emission from cesiated silicon nanowires

Journal Articles

Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

J. Shin, D. Gay, Y.‐M. Sun, J. M. White, J. G. Ekerdt

AIP Conf. Proc. 788, 482–487 (2005)

https://doi.org/10.1063/1.2063006

Published: September 2005

View articletitled, Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

Journal Articles

Copper diffusion barrier properties of CVD boron carbo-nitride

E. R. Engbrecht, Y.-M. Sun, K. H. Junker, J. M. White, J. G. Ekerdt

J. Vac. Sci. Technol. B 23, 463–467 (2005)

https://doi.org/10.1116/1.1865072

Published: March 2005

View articletitled, Copper diffusion barrier properties of CVD boron carbo-nitride

Journal Articles

Chemical vapor deposition boron carbo–nitride deposited using dimethylamine borane with ammonia and ethylene

E. R. Engbrecht, Y.-M. Sun, K. H. Junker, J. M. White, J. G. Ekerdt

J. Vac. Sci. Technol. A 22, 2152–2158 (2004)

https://doi.org/10.1116/1.1778405

Published: September 2004

View articletitled, Chemical vapor deposition boron carbo–nitride deposited using dimethylamine borane with ammonia and ethylene

Journal Articles

Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films

Q. Wang, J. G. Ekerdt, D. Gay, Y.-M. Sun, J. M. White

Appl. Phys. Lett. 84, 1380–1382 (2004)

https://doi.org/10.1063/1.1650044

Published: February 2004

View articletitled, Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films

Journal Articles

Fabrication of sawtooth diffraction gratings using nanoimprint lithography

Chih-Hao Chang, R. K. Heilmann, R. C. Fleming, J. Carter, E. Murphy, M. L. Schattenburg, T. C. Bailey, J. G. Ekerdt, R. D. Frankel, R. Voisin

J. Vac. Sci. Technol. B 21, 2755–2759 (2003)

https://doi.org/10.1116/1.1627814

Published: December 2003

View articletitled, Fabrication of sawtooth diffraction gratings using nanoimprint lithography

Journal Articles

Imprint lithography for integrated circuit fabrication

D. J. Resnick, W. J. Dauksher, D. Mancini, K. J. Nordquist, T. C. Bailey, S. Johnson, N. Stacey, J. G. Ekerdt, C. G. Willson, S. V. Sreenivasan, N. Schumaker

J. Vac. Sci. Technol. B 21, 2624–2631 (2003)

https://doi.org/10.1116/1.1618238

Published: December 2003

View articletitled, Imprint lithography for integrated circuit fabrication

Journal Articles

Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates

D. P. Mancini, K. A. Gehoski, E. Ainley, K. J. Nordquist, D. J. Resnick, T. C. Bailey, S. V. Sreenivasan, J. G. Ekerdt, C. G. Willson

J. Vac. Sci. Technol. B 20, 2896–2901 (2002)

https://doi.org/10.1116/1.1515311

Published: December 2002

View articletitled, Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates

Journal Articles

Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates

W. J. Dauksher, K. J. Nordquist, D. P. Mancini, D. J. Resnick, J. H. Baker, A. E. Hooper, A. A. Talin, T. C. Bailey, A. M. Lemonds, S. V. Sreenivasan, J. G. Ekerdt, C. G. Willson

J. Vac. Sci. Technol. B 20, 2857–2861 (2002)

https://doi.org/10.1116/1.1520575

Published: December 2002

View articletitled, Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates

Journal Articles

Electrical and spectroscopic comparison of HfO 2 / Si interfaces on nitrided and un-nitrided Si(100)

P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, J. G. Ekerdt

J. Appl. Phys. 91, 4353–4363 (2002)

https://doi.org/10.1063/1.1455155

Published: April 2002

View articletitled, Electrical and spectroscopic comparison of HfO 2 / Si interfaces on nitrided and un-nitrided Si(100)

Journal Articles

Step and flash imprint lithography: Defect analysis

T. Bailey, B. Smith, B. J. Choi, M. Colburn, M. Meissl, S. V. Sreenivasan, J. G. Ekerdt, C. G. Willson

J. Vac. Sci. Technol. B 19, 2806–2810 (2001)

https://doi.org/10.1116/1.1420203

Published: November 2001

View articletitled, Step and flash imprint lithography: Defect analysis

Journal Articles

Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide

P. D. Kirsch, J. G. Ekerdt

J. Appl. Phys. 90, 4256–4264 (2001)

https://doi.org/10.1063/1.1403675

Published: October 2001

View articletitled, Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide

Journal Articles

Interfacial chemistry of the Sr/SiO x N y / Si(100) nanostructure

P. D. Kirsch, J. G. Ekerdt

J. Vac. Sci. Technol. A 19, 2222–2231 (2001)

https://doi.org/10.1116/1.1379803

Published: September 2001

View articletitled, Interfacial chemistry of the Sr/SiO x N y / Si(100) nanostructure

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Characterization of neutral species in an NH₃-Ar plasma generated by a capacitively coupled plasma source at various radio frequencies

Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

Film continuity and interface bonding of thin boron carbonitride films on Ge(100) and Si(100)

Sealing ultralow κ porous dielectrics with thin boron carbonitride films

Optical characterization of process-dependent charging in hafnium oxide structures

Nucleation and growth study of atomic layer deposited HfO 2 gate dielectrics resulting in improved scaling and electron mobility

Vinyl ether formulations for step and flash imprint lithography

Low-threshold field emission from cesiated silicon nanowires

Growth And Characterization of Ultrathin Metal Films For ULSI Interconnects

Copper diffusion barrier properties of CVD boron carbo-nitride

Chemical vapor deposition boron carbo–nitride deposited using dimethylamine borane with ammonia and ethylene

Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films

Fabrication of sawtooth diffraction gratings using nanoimprint lithography

Imprint lithography for integrated circuit fabrication

Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates

Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates

Electrical and spectroscopic comparison of HfO 2 / Si interfaces on nitrided and un-nitrided Si(100)

Step and flash imprint lithography: Defect analysis

Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide

Interfacial chemistry of the Sr/SiO x N y / Si(100) nanostructure

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