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J. F. Zhang
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Journal Articles

Current–voltage characteristics and breakdown of different structural planar microelectrodes in atmospheric air

J. F. Zhang, D. W. Zhang, X. W. Wu, Q. L. Ren, Z. G. Qu
Journal: AIP Advances
AIP Advances 11, 065301 (2021)
https://doi.org/10.1063/5.0050121
Published: June 2021
View articletitled, Current–voltage characteristics and breakdown of different structural planar microelectrodes in atmospheric air
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Journal Articles

Optical emission spectroscopy for plasma diagnosis of 2.45 GHz ECR ion source at Peking University

W. B. Wu, S. X. Peng, H. T. Ren, Y. Xu, J. M. Wen, A. L. Zhang, T. Zhang, J. F. Zhang, J. Sun, Z. Y. Guo, J. E. Chen
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2011, 020004 (2018)
https://doi.org/10.1063/1.5053246
Published: September 2018
View articletitled, Optical emission spectroscopy for plasma diagnosis of 2.45 GHz ECR ion source at Peking University
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Journal Articles

Thermal transport properties of suspended graphene

X. M. Ma, J. L. Zou, J. F. Zhang, C. C. Guo, K. Liu, F. Wu, W. Xu, R. Y. Zhang, Z. H. Zhu, S. Q. Qin
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 045107 (2018)
https://doi.org/10.1063/1.5040375
Published: July 2018
View articletitled, Thermal transport properties of suspended graphene
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Journal Articles

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

N. Sedghi, H. Li, I. F. Brunell, K. Dawson, Y. Guo, R. J. Potter, J. T. Gibbon, V. R. Dhanak, W. D. Zhang, J. F. Zhang, S. Hall, J. Robertson, P. R. Chalker
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 092904 (2017)
https://doi.org/10.1063/1.4991879
Published: August 2017
View articletitled, Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
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Journal Articles

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

N. Sedghi, H. Li, I. F. Brunell, K. Dawson, R. J. Potter, Y. Guo, J. T. Gibbon, V. R. Dhanak, W. D. Zhang, J. F. Zhang, J. Robertson, S. Hall, P. R. Chalker
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 102902 (2017)
https://doi.org/10.1063/1.4978033
Published: March 2017
View articletitled, The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
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Journal Articles

Duty factor variation possibility from 1% to 100% with PKU microwave driven Cs-free volume H− sources

S. X. Peng, T. Zhang, H. T. Ren, A. L. Zhang, Y. Xu, J. F. Zhang, Z. Y. Guo, J. E. Chen
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 02B125 (2016)
https://doi.org/10.1063/1.4934816
Published: November 2015
View articletitled, Duty factor variation possibility from 1% to 100% with PKU microwave driven Cs-free volume H− sources
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Journal Articles

Study on space charge compensation in negative hydrogen ion beam

A. L. Zhang, S. X. Peng, H. T. Ren, T. Zhang, J. F. Zhang, Y. Xu, Z. Y. Guo, J. E. Chen
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 02B915 (2016)
https://doi.org/10.1063/1.4932557
Published: October 2015
View articletitled, Study on space charge compensation in negative hydrogen ion beam
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Journal Articles

Improvements of PKU PMECRIS for continuous hundred hours CW proton beam operation

S. X. Peng, A. L. Zhang, H. T. Ren, T. Zhang, J. F. Zhang, Y. Xu, Z. Y. Guo, J. E. Chen
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 87, 02A706 (2016)
https://doi.org/10.1063/1.4932399
Published: October 2015
View articletitled, Improvements of PKU PMECRIS for continuous hundred hours CW proton beam operation
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Journal Articles

CW/Pulsed H− ion beam generation with PKU Cs-free 2.45 GHz microwave driven ion source

S. X. Peng, H. T. Ren, Y. Xu, T. Zhang, A. L. Zhang, J. F. Zhang, J. Zhao, Z. Y. Guo, J. E. Chen
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1655, 070005 (2015)
https://doi.org/10.1063/1.4916485
Published: April 2015
View articletitled, CW/Pulsed H− ion beam generation with PKU Cs-free 2.45 GHz microwave driven ion source
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Journal Articles

Electrically controlling the polarizing direction of a graphene polarizer

Z. H. Zhu, C. C. Guo, K. Liu, J. F. Zhang, W. M. Ye, X. D. Yuan, S. Q. Qin
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 104304 (2014)
https://doi.org/10.1063/1.4895588
Published: September 2014
View articletitled, Electrically controlling the polarizing direction of a graphene polarizer
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Journal Articles

An assessment of the mobility degradation induced by remote charge scattering

Z. Ji, J. F. Zhang, W. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 263502 (2009)
https://doi.org/10.1063/1.3279146
Published: December 2009
View articletitled, An assessment of the mobility degradation induced by remote charge scattering
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Journal Articles

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, T. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 161904 (2009)
https://doi.org/10.1063/1.3253416
Published: October 2009
View articletitled, Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
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Journal Articles

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

M. H. Chang, C. Z. Zhao, Z. Ji, J. F. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 054505 (2009)
https://doi.org/10.1063/1.3093679
Published: March 2009
View articletitled, On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks
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Journal Articles

Process-induced positive charges in Hf-based gate stacks

C. Z. Zhao, J. F. Zhang, M. H. Chang, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 014507 (2008)
https://doi.org/10.1063/1.2826937
Published: January 2008
View articletitled, Process-induced positive charges in Hf-based gate stacks
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Journal Articles

Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks

J. F. Zhang, C. Z. Zhao, M. H. Chang, M. B. Zahid, A. R. Peaker, S. Hall, G. Groeseneken, L. Pantisano, S. De Gendt, M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 013501 (2008)
https://doi.org/10.1063/1.2828697
Published: January 2008
View articletitled, Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks
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Journal Articles

Threshold voltage instability of p -channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

C. Z. Zhao, M. B. Zahid, J. F. Zhang, G. Groeseneken, R. Degraeve, S. De Gendt
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 143502 (2007)
https://doi.org/10.1063/1.2719022
Published: April 2007
View articletitled, Threshold voltage instability of p -channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics
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Journal Articles

On positive charge formed under negative bias temperature stress

M. H. Chang, J. F. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 024516 (2007)
https://doi.org/10.1063/1.2427109
Published: January 2007
View articletitled, On positive charge formed under negative bias temperature stress
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Journal Articles

Determination of capture cross sections for as-grown electron traps in Hf O 2 ∕ Hf Si O stacks

C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, S. De Gendt
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 093716 (2006)
https://doi.org/10.1063/1.2364043
Published: November 2006
View articletitled, Determination of capture cross sections for as-grown electron traps in Hf O 2 ∕ Hf Si O stacks
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Journal Articles

Impact of gate materials on positive charge formation in Hf O 2 ∕ Si O 2 stacks

C. Z. Zhao, J. F. Zhang, M. B. Zahid, G. Groeseneken, R. Degraeve, S. De Gendt
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 023507 (2006)
https://doi.org/10.1063/1.2220484
Published: July 2006
View articletitled, Impact of gate materials on positive charge formation in Hf O 2 ∕ Si O 2 stacks
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Journal Articles

Effects of hydrogen on positive charges in gate oxides

C. Z. Zhao, J. F. Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 073703 (2005)
https://doi.org/10.1063/1.1882771
Published: March 2005
View articletitled, Effects of hydrogen on positive charges in gate oxides
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