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J. F. Muth
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Journal Articles

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

P. P. Paskov, M. Slomski, J. H. Leach, J. F. Muth, T. Paskova
Journal: AIP Advances
AIP Advances 7, 095302 (2017)
https://doi.org/10.1063/1.4989626
Published: September 2017
View articletitled, Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment
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Journal Articles

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

M. Slomski, N. Blumenschein, P. P. Paskov, J. F. Muth, T. Paskova
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 235104 (2017)
https://doi.org/10.1063/1.4986478
Published: June 2017
View articletitled, Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
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Journal Articles

Shallow acceptor complexes in p-type ZnO

J. G. Reynolds, C. L. Reynolds, Jr., A. Mohanta, J. F. Muth, J. E. Rowe, H. O. Everitt, D. E. Aspnes
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 152114 (2013)
https://doi.org/10.1063/1.4802753
Published: April 2013
View articletitled, Shallow acceptor complexes in p-type ZnO
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Journal Articles

Optimal composition of europium gallium oxide thin films for device applications

P. Wellenius, E. R. Smith, S. M. LeBoeuf, H. O. Everitt, J. F. Muth
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 103111 (2010)
https://doi.org/10.1063/1.3319670
Published: May 2010
View articletitled, Optimal composition of europium gallium oxide thin films for device applications
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Journal Articles

Focused ion beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications

A. Dhawan, J. F. Muth, D. N. Leonard, M. D. Gerhold, J. Gleeson, T. Vo-Dinh, P. E. Russell
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 2168–2173 (2008)
https://doi.org/10.1116/1.3013329
Published: December 2008
View articletitled, Focused ion beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications
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Journal Articles

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

A. Suresh, J. F. Muth
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 033502 (2008)
https://doi.org/10.1063/1.2824758
Published: January 2008
View articletitled, Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
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Journal Articles

Bright, low voltage europium doped gallium oxide thin film electroluminescent devices

P. Wellenius, A. Suresh, J. F. Muth
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 021111 (2008)
https://doi.org/10.1063/1.2824846
Published: January 2008
View articletitled, Bright, low voltage europium doped gallium oxide thin film electroluminescent devices
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Journal Articles

Planar ZnO ultraviolet modulator

X. Y. Zhang, A. Dhawan, P. Wellenius, A. Suresh, J. F. Muth
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 071107 (2007)
https://doi.org/10.1063/1.2770995
Published: August 2007
View articletitled, Planar ZnO ultraviolet modulator
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Journal Articles

Nitrogen acceptors in bulk ZnO ( 000 1 ¯ ) substrates and homoepitaxial ZnO films

B. T. Adekore, J. M. Pierce, R. F. Davis, D. W. Barlage, J. F. Muth
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 024908 (2007)
https://doi.org/10.1063/1.2751097
Published: July 2007
View articletitled, Nitrogen acceptors in bulk ZnO ( 000 1 ¯ ) substrates and homoepitaxial ZnO films
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Journal Articles

Photoluminescence study of ZnO films codoped with nitrogen and tellurium

H. L. Porter, J. F. Muth, J. Narayan, John V. Foreman, Henry O. Everitt
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 123102 (2006)
https://doi.org/10.1063/1.2372312
Published: December 2006
View articletitled, Photoluminescence study of ZnO films codoped with nitrogen and tellurium
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Journal Articles

Accurate dependence of gallium nitride thermal conductivity on dislocation density

C. Mion, J. F. Muth, E. A. Preble, D. Hanser
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 092123 (2006)
https://doi.org/10.1063/1.2335972
Published: September 2006
View articletitled, Accurate dependence of gallium nitride thermal conductivity on dislocation density
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Journal Articles

Optical characterization of Eu-doped β - Ga 2 O 3 thin films

P. Gollakota, A. Dhawan, P. Wellenius, L. M. Lunardi, J. F. Muth, Y. N. Saripalli, H. Y. Peng, H. O. Everitt
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 221906 (2006)
https://doi.org/10.1063/1.2208368
Published: May 2006
View articletitled, Optical characterization of Eu-doped β - Ga 2 O 3 thin films
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Journal Articles

Gallium nitride surface quantum wells

J. F. Muth, X. Zhang, A. Cai, D. Fothergill, J. C. Roberts, P. Rajagopal, J. W. Cook, Jr., E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 192117 (2005)
https://doi.org/10.1063/1.2123396
Published: November 2005
View articletitled, Gallium nitride surface quantum wells
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Journal Articles

Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium

H. L. Porter, A. L. Cai, J. F. Muth, J. Narayan
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 211918 (2005)
https://doi.org/10.1063/1.1923194
Published: May 2005
View articletitled, Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
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Journal Articles

Refractive indices of Zn Si N 2 on r -plane sapphire

B. P. Cook, H. O. Everitt, I. Avrutsky, A. Osinsky, A. Cai, J. F. Muth
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 121906 (2005)
https://doi.org/10.1063/1.1865325
Published: March 2005
View articletitled, Refractive indices of Zn Si N 2 on r -plane sapphire
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Journal Articles

Planar gallium nitride ultraviolet optical modulator

A. E. Oberhofer, J. F. Muth, M. A. L. Johnson, Z. Y. Chen, E. F. Fleet, G. D. Cooper
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 2748–2750 (2003)
https://doi.org/10.1063/1.1615675
Published: October 2003
View articletitled, Planar gallium nitride ultraviolet optical modulator
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Journal Articles

Optical and structural studies of hydride vapor phase epitaxy grown GaN

Y. C. Chang, A. L. Cai, J. F. Muth, R. M. Kolbas, M. Park, J. J. Cuomo, A. Hanser, J. Bumgarner
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 21, 701–705 (2003)
https://doi.org/10.1116/1.1568346
Published: April 2003
View articletitled, Optical and structural studies of hydride vapor phase epitaxy grown GaN
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Journal Articles

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Minseo Park, J.-P. Maria, J. J. Cuomo, Y. C. Chang, J. F. Muth, R. M. Kolbas, R. J. Nemanich, E. Carlson, J. Bumgarner
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1797–1799 (2002)
https://doi.org/10.1063/1.1506781
Published: September 2002
View articletitled, X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy
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Journal Articles

Electron-beam-induced optical memory effects in GaN

Y. C. Chang, A. L. Cai, M. A. L. Johnson, J. F. Muth, R. M. Kolbas, Z. J. Reitmeier, S. Einfeldt, R. F. Davis
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 2675–2677 (2002)
https://doi.org/10.1063/1.1469222
Published: April 2002
View articletitled, Electron-beam-induced optical memory effects in GaN
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Journal Articles

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Y. C. Chang, A. E. Oberhofer, J. F. Muth, R. M. Kolbas, R. F. Davis
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 281–283 (2001)
https://doi.org/10.1063/1.1381417
Published: July 2001
View articletitled, Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
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